公开(公告)号：US10755945B2

公开(公告)日：2020-08-25

申请号：US16035819

申请日：2018-07-16

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Pang-Sheng Chang ,  Yu-Feng Yin ,  Chao-Hsun Wang ,  Kuo-Yi Chao ,  Fu-Kai Yang ,  Mei-Yun Wang ,  Feng-Yu Chang ,  Chen-Yuan Kao ,  Chia-Yang Hung ,  Chia-Sheng Chang ,  Shu-Huei Suen ,  Jyu-Horng Shieh ,  Sheng-Liang Pan ,  Jack Kuo-Ping Kuo ,  Shao-Jyun Wu

IPC分类号： H01L21/321 ,  H01L29/49 ,  H01L29/78 ,  H01L21/28 ,  H01L29/66

摘要： A method includes forming a metal gate structure, wherein the metal gate structure includes a gate dielectric layer and a gate electrode; performing a surface treatment to a top surface of the metal gate structure, wherein the surface treatment converts a top portion of the gate electrode to an oxidation layer; forming a conductive layer above the gate electrode, wherein the forming of the conductive layer includes substituting oxygen in the oxidation layer with a metallic element; and forming a contact feature above the metal gate structure, wherein the contact feature is in direct contact with the conductive layer.

公开(公告)号：US11735481B2

公开(公告)日：2023-08-22

申请号：US17391220

申请日：2021-08-02

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Shao-Jyun Wu ,  Hung-Chi Wu ,  Chia-Ching Lee ,  Pin-Hsuan Yeh ,  Hung-Chin Chung ,  Hsien-Ming Lee ,  Chien-Hao Chen ,  Sheng-Liang Pan ,  Huan-Just Lin

IPC分类号： H01L21/8234 ,  H01L29/78 ,  H01L29/66 ,  H01L29/417 ,  H01L21/02

CPC分类号： H01L21/823431 ,  H01L21/0234 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/785

摘要： An improved work function layer and a method of forming the same are disclosed. In an embodiment, the method includes forming a semiconductor fin extending from a substrate; depositing a dielectric layer over the semiconductor fin; depositing a first work function layer over the dielectric layer; and exposing the first work function layer to a metastable plasma of a first reaction gas, a metastable plasma of a generation gas, and a metastable plasma of a second reaction gas, the first reaction gas being different from the second reaction gas.

公开(公告)号：US20210104443A1

公开(公告)日：2021-04-08

申请号：US17127325

申请日：2020-12-18

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Shao-Jyun Wu ,  Sheng-Liang Pan

IPC分类号： H01L21/8238 ,  H01L21/28 ,  H01L21/311 ,  H01L21/321 ,  H01L27/092

摘要： A method of forming a semiconductor device includes forming a first dummy gate structure and a second dummy gate structure over a fin; forming a first dielectric layer around the first dummy gate structure and around the second dummy gate structure; removing the first dummy gate structure and the second dummy gate structure to form a first recess and a second recess in the first dielectric layer, respectively; forming a gate dielectric layer in the first recess and the second recess; forming a first work function layer over the gate dielectric layer in the first and the second recesses; removing the first work function layer from the first recess; converting a surface layer of the first work function layer in the second recess into an oxide; and forming a second work function layer in the first recess over the gate dielectric layer and in the second recess over the oxide.

公开(公告)号：US12002718B2

公开(公告)日：2024-06-04

申请号：US18064432

申请日：2022-12-12

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Shao-Jyun Wu ,  Sheng-Liang Pan

IPC分类号： H01L21/8238 ,  H01L21/28 ,  H01L21/311 ,  H01L21/321 ,  H01L27/092

CPC分类号： H01L21/823842 ,  H01L21/28088 ,  H01L21/31138 ,  H01L21/32105 ,  H01L21/823821 ,  H01L27/0924

摘要： A method of forming a semiconductor device includes forming a first dummy gate structure and a second dummy gate structure over a fin; forming a first dielectric layer around the first dummy gate structure and around the second dummy gate structure; removing the first dummy gate structure and the second dummy gate structure to form a first recess and a second recess in the first dielectric layer, respectively; forming a gate dielectric layer in the first recess and the second recess; forming a first work function layer over the gate dielectric layer in the first and the second recesses; removing the first work function layer from the first recess; converting a surface layer of the first work function layer in the second recess into an oxide; and forming a second work function layer in the first recess over the gate dielectric layer and in the second recess over the oxide.

公开(公告)号：US11527447B2

公开(公告)日：2022-12-13

申请号：US17127325

申请日：2020-12-18

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Shao-Jyun Wu ,  Sheng-Liang Pan

IPC分类号： H01L21/8238 ,  H01L21/28 ,  H01L21/311 ,  H01L21/321 ,  H01L27/092

摘要： A method of forming a semiconductor device includes forming a first dummy gate structure and a second dummy gate structure over a fin; forming a first dielectric layer around the first dummy gate structure and around the second dummy gate structure; removing the first dummy gate structure and the second dummy gate structure to form a first recess and a second recess in the first dielectric layer, respectively; forming a gate dielectric layer in the first recess and the second recess; forming a first work function layer over the gate dielectric layer in the first and the second recesses; removing the first work function layer from the first recess; converting a surface layer of the first work function layer in the second recess into an oxide; and forming a second work function layer in the first recess over the gate dielectric layer and in the second recess over the oxide.

公开(公告)号：US20220139712A1

公开(公告)日：2022-05-05

申请号：US17648159

申请日：2022-01-17

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Shao-Jyun Wu ,  Sheng-Liang Pan ,  Huan-Just Lin

IPC分类号： H01L21/28 ,  H01L21/8238 ,  G03F7/09 ,  H01L29/66 ,  H01L21/027 ,  H01L21/3213 ,  H01L27/092 ,  H01L29/08 ,  H01L29/49 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26 ,  H01L21/32 ,  H01L21/30 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/02

摘要： A method includes forming a first high-k dielectric layer over a first semiconductor region, forming a second high-k dielectric layer over a second semiconductor region, forming a first metal layer comprising a first portion over the first high-k dielectric layer and a second portion over the second high-k dielectric layer, forming an etching mask over the second portion of the first metal layer, and etching the first portion of the first metal layer. The etching mask protects the second portion of the first metal layer. The etching mask is ashed using meta stable plasma. A second metal layer is then formed over the first high-k dielectric layer.

公开(公告)号：US20210082768A1

公开(公告)日：2021-03-18

申请号：US16568518

申请日：2019-09-12

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Shao-Jyun Wu ,  Hung-Chi Wu ,  Chia-Ching Lee ,  Pin-Hsuan Yeh ,  Hung-Chin Chung ,  Hsien-Ming Lee ,  Chien-Hao Chen ,  Sheng-Liang Pan ,  Huan-Just Lin

IPC分类号： H01L21/8234 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

摘要： An improved work function layer and a method of forming the same are disclosed. In an embodiment, the method includes forming a semiconductor fin extending from a substrate; depositing a dielectric layer over the semiconductor fin; depositing a first work function layer over the dielectric layer; and exposing the first work function layer to a metastable plasma of a first reaction gas, a metastable plasma of a generation gas, and a metastable plasma of a second reaction gas, the first reaction gas being different from the second reaction gas.

公开(公告)号：US11688606B2

公开(公告)日：2023-06-27

申请号：US17648159

申请日：2022-01-17

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Shao-Jyun Wu ,  Sheng-Liang Pan ,  Huan-Just Lin

IPC分类号： H01L21/02 ,  H01L21/28 ,  H01L21/8238 ,  G03F7/09 ,  H01L29/66 ,  H01L21/027 ,  H01L21/3213 ,  H01L27/092 ,  H01L29/08 ,  H01L29/49 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26 ,  H01L21/32 ,  H01L21/30 ,  H01L21/3205 ,  H01L21/324

CPC分类号： H01L21/28185 ,  G03F7/091 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26 ,  H01L21/0234 ,  H01L21/0276 ,  H01L21/02252 ,  H01L21/28088 ,  H01L21/28158 ,  H01L21/28176 ,  H01L21/28211 ,  H01L21/30 ,  H01L21/32 ,  H01L21/324 ,  H01L21/3205 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823842 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/4966 ,  H01L29/66545

摘要： A method includes forming a first high-k dielectric layer over a first semiconductor region, forming a second high-k dielectric layer over a second semiconductor region, forming a first metal layer comprising a first portion over the first high-k dielectric layer and a second portion over the second high-k dielectric layer, forming an etching mask over the second portion of the first metal layer, and etching the first portion of the first metal layer. The etching mask protects the second portion of the first metal layer. The etching mask is ashed using meta stable plasma. A second metal layer is then formed over the first high-k dielectric layer.

公开(公告)号：US20200020541A1

公开(公告)日：2020-01-16

申请号：US16035819

申请日：2018-07-16

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Pang-Sheng Chang ,  Yu-Feng Yin ,  Chao-Hsun Wang ,  Kuo-Yi Chao ,  Fu-Kai Yang ,  Mei-Yun Wang ,  Feng-Yu Chang ,  Chen-Yuan Kao ,  Chia-Yang Hung ,  Chia-Sheng Chang ,  Shu-Huei Suen ,  Jyu-Horng Shieh ,  Sheng-Liang Pan ,  Jack Kuo-Ping Kuo ,  Shao-Jyun Wu

IPC分类号： H01L21/321 ,  H01L29/49 ,  H01L29/66 ,  H01L21/28 ,  H01L29/78

摘要： A method includes forming a metal gate structure, wherein the metal gate structure includes a gate dielectric layer and a gate electrode; performing a surface treatment to a top surface of the metal gate structure, wherein the surface treatment converts a top portion of the gate electrode to an oxidation layer; forming a conductive layer above the gate electrode, wherein the forming of the conductive layer includes substituting oxygen in the oxidation layer with a metallic element; and forming a contact feature above the metal gate structure, wherein the contact feature is in direct contact with the conductive layer.

公开(公告)号：US20240282641A1

公开(公告)日：2024-08-22

申请号：US18650668

申请日：2024-04-30

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Shao-Jyun Wu ,  Sheng-Liang Pan

IPC分类号： H01L21/8238 ,  H01L21/28 ,  H01L21/311 ,  H01L21/321 ,  H01L27/092

CPC分类号： H01L21/823842 ,  H01L21/28088 ,  H01L21/31138 ,  H01L21/32105 ,  H01L21/823821 ,  H01L27/0924

摘要： A method of forming a semiconductor device includes forming a first dummy gate structure and a second dummy gate structure over a fin; forming a first dielectric layer around the first dummy gate structure and around the second dummy gate structure; removing the first dummy gate structure and the second dummy gate structure to form a first recess and a second recess in the first dielectric layer, respectively; forming a gate dielectric layer in the first recess and the second recess; forming a first work function layer over the gate dielectric layer in the first and the second recesses; removing the first work function layer from the first recess; converting a surface layer of the first work function layer in the second recess into an oxide; and forming a second work function layer in the first recess over the gate dielectric layer and in the second recess over the oxide.