公开(公告)号：US11908700B2

公开(公告)日：2024-02-20

申请号：US17816374

申请日：2022-07-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Nai-Han Cheng ,  Chi-Ming Yang

IPC: H01L21/3065 ,  H01J37/305 ,  H01J37/317 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/317 ,  H01J37/3172 ,  H01J37/32412

Abstract: In some embodiments of the present disclosure, a method of manufacturing a semiconductor structure includes the following operations. A substrate including a first atom and a second atom is provided. An etchant is dispatched from an ionizer. A compound is formed over the substrate by bonding the first atom with the etchant. A particle is released from an implanter. The compound is removed by bombarding the compound with the particle having an energy smaller than a bonding energy between the first atom and the second atom, wherein the particle is different from the etchant.

公开(公告)号：US09218938B2

公开(公告)日：2015-12-22

申请号：US14317650

申请日：2014-06-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Nai-Han Cheng

IPC: H01J37/244 ,  H01J37/317

CPC classification number: H01J37/244 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/24405 ,  H01J2237/24528 ,  H01J2237/24542

Abstract: A beam monitoring device, method, and system is disclosed. An exemplary beam monitoring device includes a one dimensional (1D) profiler. The 1D profiler includes a Faraday having an insulation material and a conductive material. The beam monitoring device further includes a two dimensional (2D) profiler. The 2D profiler includes a plurality of Faraday having an insulation material and a conductive material. The plurality of Faraday of the 2D profiler are arranged in a pattern that is offset in a direction. The 1D profiler is coupled to a first end of the 2D profiler and extends beyond two adjacent outer edges of the 2D profiler. The beam monitoring device further includes a control arm. The control arm is operable to facilitate movement of the beam monitoring device in the direction.

Abstract translation: 公开了一种光束监测装置，方法和系统。 示例性束监测装置包括一维（1D）轮廓仪。 1D轮廓仪包括具有绝缘材料和导电材料的法拉第。 光束监测装置还包括二维（2D）轮廓仪。 2D轮廓仪包括具有绝缘材料和导电材料的多个法拉第。 2D轮廓仪的多个法拉第以一个方向偏移的图案排列。 1D轮廓仪耦合到2D轮廓仪的第一端并延伸超过2D轮廓仪的两个相邻的外边缘。 光束监视装置还包括控制臂。 控制臂可操作以便于沿着该方向的光束监视装置的移动。

公开(公告)号：US11482422B2

公开(公告)日：2022-10-25

申请号：US17008162

申请日：2020-08-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Nai-Han Cheng ,  Chi-Ming Yang

IPC: H01L21/3065 ,  H01J37/305 ,  H01J37/317 ,  H01J37/32

Abstract: In some embodiments of the present disclosure, a method of manufacturing a semiconductor structure includes providing a substrate including a first atom and a second atom; forming a compound over the substrate by bonding the first atom with a ionized etchant; and removing the compound from the substrate by bombarding the compounds with a charged particle having a bombarding energy smaller than a bonding energy between the first atom and the second atom, wherein the charged particle and the ionized etchant include different ions.

公开(公告)号：US09929045B2

公开(公告)日：2018-03-27

申请号：US15210065

申请日：2016-07-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Nai-Han Cheng ,  Chi-Ming Yang

IPC: G06F17/50 ,  G06F19/00 ,  G21K5/10 ,  G06K9/00 ,  H01L21/00 ,  H01L21/768 ,  H01L21/66 ,  H01L25/00 ,  H01L21/67

CPC classification number: H01L21/76894 ,  G06F17/5004 ,  G06F19/00 ,  G06F2217/12 ,  G06K9/00 ,  G06K9/2018 ,  G06K9/6284 ,  G06T7/0006 ,  G06T2207/10056 ,  G06T2207/30148 ,  G21K5/10 ,  H01L21/67138 ,  H01L21/67288 ,  H01L22/12 ,  H01L22/20 ,  H01L22/22 ,  H01L25/50

Abstract: A defect inspection and repairing method is disclosed. The method includes: providing a wafer including a semiconductor chip disposed on a surface of the wafer; disposing a layer over the semiconductor chip; obtaining a scanned image of the disposed layer; performing an image analysis upon the scanned image to obtain a defect information; and generating a recipe of a beam according to the defect information, wherein the beam is configured to apply on the disposed layer. Associated system and non-transitory computer-readable medium are also disclosed.

公开(公告)号：US09892954B2

公开(公告)日：2018-02-13

申请号：US14220708

申请日：2014-03-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Nai-Han Cheng ,  Chi-Ming Yang ,  You-Hua Chou ,  Kuo-Sheng Chuang ,  Chin-Hsiang Lin

IPC: H01L21/67 ,  H01L21/683 ,  B05C11/00 ,  C23C16/458 ,  C23C14/50 ,  H01L21/687 ,  C23C14/54 ,  C23C16/52

CPC classification number: H01L21/68785 ,  C23C14/50 ,  C23C14/54 ,  C23C16/4582 ,  C23C16/52 ,  H01L21/67098 ,  H01L21/67288 ,  H01L21/6831 ,  Y10T29/49998

Abstract: A wafer processing system includes at least one metrology chamber, a process chamber, and a controller. The at least one metrology chamber is configured to measure a thickness of a first layer on a back side of a wafer. The process chamber is configured to perform a treatment on a front side of the wafer. The front side is opposite the back side. The process chamber includes therein a multi-zone chuck. The multi-zone chuck is configured to support the back side of the wafer. The multi-zone chuck has a plurality of zones with controllable clamping forces for securing the wafer to the multi-zone chuck. The controller is coupled to the metrology chamber and the multi-zone chuck. The controller is configured to control the clamping forces in the corresponding zones in accordance with measured values of the thickness of the first layer in the corresponding zones.

公开(公告)号：US20140306119A1

公开(公告)日：2014-10-16

申请号：US14317650

申请日：2014-06-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

IPC: H01J37/244

CPC classification number: H01J37/244 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/24405 ,  H01J2237/24528 ,  H01J2237/24542

Abstract: A beam monitoring device, method, and system is disclosed. An exemplary beam monitoring device includes a one dimensional (1D) profiler. The 1D profiler includes a Faraday having an insulation material and a conductive material. The beam monitoring device further includes a two dimensional (2D) profiler. The 2D profiler includes a plurality of Faraday having an insulation material and a conductive material. The plurality of Faraday of the 2D profiler are arranged in a pattern that is offset in a direction. The 1D profiler is coupled to a first end of the 2D profiler and extends beyond two adjacent outer edges of the 2D profiler. The beam monitoring device further includes a control arm. The control arm is operable to facilitate movement of the beam monitoring device in the direction.

Abstract translation: 公开了一种光束监测装置，方法和系统。 示例性束监测装置包括一维（1D）轮廓仪。 1D轮廓仪包括具有绝缘材料和导电材料的法拉第。 光束监测装置还包括二维（2D）轮廓仪。 2D轮廓仪包括具有绝缘材料和导电材料的多个法拉第。 2D轮廓仪的多个法拉第以一个方向偏移的图案排列。 1D轮廓仪耦合到2D轮廓仪的第一端并延伸超过2D轮廓仪的两个相邻的外边缘。 光束监视装置还包括控制臂。 控制臂可操作以便于沿着该方向的光束监视装置的移动。

公开(公告)号：US20130280823A1

公开(公告)日：2013-10-24

申请号：US13918731

申请日：2013-06-14

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chun-Lin Chang ,  Chih-Hong Hwang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

IPC: H01L21/66

CPC classification number: H01L22/10 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/24542 ,  H01J2237/30455 ,  H01J2237/31703 ,  H01L21/265

Abstract: An apparatus for monitoring an ion distribution of a wafer comprises a first sensor and a sensor. The first sensor, the second senor and the wafer are placed in an effective range of a uniform ion implantation current profile. A controller determines the ion dose of each region of the wafer based upon the detected signal from the first sensor and the second senor. In addition, the controller adjusts the scanning frequency of an ion beam or the movement speed of the wafer to achieve a uniform ion distribution on the wafer.

Abstract translation: 用于监测晶片的离子分布的装置包括第一传感器和传感器。 将第一传感器，第二传感器和晶片放置在均匀离子注入电流分布的有效范围内。 控制器基于来自第一传感器和第二传感器的检测信号确定晶片的每个区域的离子剂量。 此外，控制器调节离子束的扫描频率或晶片的移动速度，以在晶片上实现均匀的离子分布。

公开(公告)号：US09892931B2

公开(公告)日：2018-02-13

申请号：US14052973

申请日：2013-10-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Nai-Han Cheng ,  Chi-Ming Yang

IPC: C23C14/35 ,  H01L21/3065 ,  H01J37/305 ,  H01J37/317

CPC classification number: H01L21/3065 ,  H01J37/3056 ,  H01J37/317 ,  H01J37/3172 ,  H01J37/3178 ,  H01J37/32412

Abstract: In some embodiments of the present disclosure, an apparatus includes an ionizer. The ionizer is configured to dispatch a reactive ion on a surface. The apparatus also has an implanter and the implanter has an outlet releasing an accelerated charged particle on the surface.

公开(公告)号：US09865429B2

公开(公告)日：2018-01-09

申请号：US14541314

申请日：2014-11-14

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

IPC: H01J3/02 ,  H01J37/317 ,  H01J3/26 ,  H01J37/02 ,  H01J37/06

CPC classification number: H01J37/3171 ,  H01J3/02 ,  H01J3/022 ,  H01J3/26 ,  H01J37/026 ,  H01J37/06 ,  H01J2237/0041 ,  H01J2237/31705

Abstract: The present disclosure provides for various advantageous methods and apparatus of controlling electron emission. One of the broader forms of the present disclosure involves an electron emission element, comprising an electron emitter including an electron emission region disposed between a gate electrode and a cathode electrode. An anode is disposed above the electron emission region, and a voltage set is disposed above the anode. A first voltage applied between the gate electrode and the cathode electrode controls a quantity of electrons generated from the electron emission region. A second voltage applied to the anode extracts generated electrons. A third voltage applied to the voltage set controls a direction of electrons extracted through the anode.

公开(公告)号：US20150221561A1

公开(公告)日：2015-08-06

申请号：US14684953

申请日：2015-04-13

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chun-Lin Chang ,  Chih-Hong Hwang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

IPC: H01L21/66 ,  H01L21/265

CPC classification number: H01L22/10 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/24542 ,  H01J2237/30455 ,  H01J2237/31703 ,  H01L21/265

Abstract: A method comprises placing a wafer and a ring-shaped beam profiler on a wafer holder, wherein the ring-shaped beam profiler is adjacent to the wafer, moving a first sensor and a second sensor simultaneously with the wafer holder, receiving a first sensed signal and a second sensed signal from the first sensor and the second sensor respectively and adjusting an ion beam generated by an ion beam generator based upon the first sensed signal and the second sensed signal.

Abstract translation: 一种方法包括将晶片和环形光束轮廓仪放置在晶片保持器上，其中环形光束轮廓仪邻近晶片，与晶片保持器同时移动第一传感器和第二传感器，接收第一感测信号 以及分别来自第一传感器和第二传感器的第二检测信号，并且基于第一感测信号和第二感测信号调整由离子束发生器产生的离子束。