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    In-Situ Deposition and Densification Treatment for Metal-Comprising Resist Layer
    4.
    发明公开
    In-Situ Deposition and Densification Treatment for Metal-Comprising Resist Layer 审中-公开

    公开(公告)号：US20240019778A1

    公开(公告)日：2024-01-18

    申请号：US18446750

    申请日：2023-08-09

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Yi-Chen Kuo ,  Chih-Cheng Liu ,  Yen-Yu Chen ,  Jr-Hung Li ,  Chi-Ming Yang ,  Tze-Liang Lee

    IPC: G03F7/004 ,  G03F7/16 ,  H01L21/027

    CPC classification number: G03F7/0043 ,  G03F7/168 ,  H01L21/0274

    Abstract: Metal-comprising resist layers (for example, metal oxide resist layers), methods for forming the metal-comprising resist layers, and lithography methods that implement the metal-comprising resist layers are disclosed herein that can improve lithography resolution. An exemplary method includes forming a metal oxide resist layer over a workpiece by performing deposition processes to form metal oxide resist sublayers of the metal oxide resist layer over the workpiece and performing a densification process on at least one of the metal oxide resist sublayers. Each deposition process forms a respective one of the metal oxide resist sublayers. The densification process increases a density of the at least one of the metal oxide resist sublayers. Parameters of the deposition processes and/or parameters of the densification process can be tuned to achieve different density profiles, different density characteristics, and/or different absorption characteristics to optimize patterning of the metal oxide resist layer.

    Ellipsometer and method for estimating thickness of film
    6.
    发明授权
    Ellipsometer and method for estimating thickness of film 有权

    公开(公告)号：US11255658B2

    公开(公告)日：2022-02-22

    申请号：US17002677

    申请日：2020-08-25

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    Inventor： Feng Yuan Hsu ,  Chi-Ming Yang ,  Ching-Hsiang Hsu ,  Chyi Shyuan Chern

    IPC: G01B11/06 ,  H01L21/66 ,  G01N21/21

    Abstract: An ellipsometer includes a light source, a polarizer, an asymmetric wavelength retarder, an analyzer and an optical detection component. The light source is configured to provide a light beam having multiple wavelengths incident to a sample. The polarizer is disposed between the light source and the sample, and configured to polarize the light beam. The asymmetric wavelength retarder is configured to provide a varied retardation effect on the light beam varied by wavelength. The analyzer is configured to analyze a polarization state of the light beam reflected by the sample. The optical detection component is configured to detect the light beam from the analyzer.

    Method of manufacturing semiconductor structure
    7.
    发明授权
    Method of manufacturing semiconductor structure 有权

    公开(公告)号：US10991604B2

    公开(公告)日：2021-04-27

    申请号：US16448888

    申请日：2019-06-21

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    Inventor： Jyh-Shiou Hsu ,  Chi-Ming Yang ,  Tzu Jeng Hsu

    IPC: H01L21/67 ,  H01L21/768 ,  C25D5/34 ,  C25D7/12 ,  C23C28/02 ,  C25D3/38 ,  H01L23/532

    Abstract: A method of manufacturing a semiconductor structure includes loading the substrate from a first load lock chamber into a first processing chamber; disposing a conductive layer over the substrate in the first processing chamber; loading the substrate from the first processing chamber into the first load lock chamber; loading the substrate from the first load lock chamber into an enclosure filled with an inert gas and disposed between the first load lock chamber and a second load lock chamber; loading the substrate from the enclosure into the second load lock chamber; loading the substrate from the second load lock chamber into a second processing chamber; disposing a conductive member over the conductive layer in the second processing chamber; loading the substrate from the second processing chamber into the second load lock chamber; and loading the substrate from the second load lock chamber into a second load port.

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