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公开(公告)号：US12130555B2
公开(公告)日：2024-10-29
申请号：US18142500
申请日：2023-05-02
Inventor： Chih-Ping Yen , Yen-Shuo Su , Chieh Hsieh , Shang-Chieh Chien , Chun-Lin Chang , Li-Jui Chen , Heng-Hsin Liu
CPC classification number: G03F7/70033 , H05G2/006 , H05G2/008
Abstract: An extreme ultra violet (EUV) lithography method includes receiving an EUV light by a scanner from an EUV light source, the EUV light passing through an intermediate focus disposed in the scanner and at a junction of the EUV light source and the scanner; directing the EUV light by the scanner to a reticle in the scanner; and deflecting nanoparticles from the EUV light source away from the reticle by generating a gas flow using a gas jet disposed entirely in the scanner and proximate to an interface of the scanner and the intermediate focus such that the gas jet does not block the EUV light.
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公开(公告)号：US12114412B2
公开(公告)日：2024-10-08
申请号：US18228206
申请日：2023-07-31
Inventor： Yen-Shuo Su , Jen-Hao Yeh , Jhan-Hong Yeh , Ting-Ya Cheng , Henry Yee Shian Tong , Chun-Lin Chang , Han-Lung Chang , Li-Jui Chen , Po-Chung Cheng
Abstract: A method for monitoring a shock wave in an extreme ultraviolet light source includes irradiating a target droplet in the extreme ultraviolet light source apparatus of an extreme ultraviolet lithography tool with ionizing radiation to generate a plasma and to detect a shock wave generated by the plasma. One or more operating parameters of the extreme ultraviolet light source is adjusted based on the detected shock wave.
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公开(公告)号：US11199767B2
公开(公告)日：2021-12-14
申请号：US16713964
申请日：2019-12-13
Inventor： Chung-Chieh Lee , Feng Yuan Hsu , Chyi Shyuan Chern , Chi-Ming Yang , Tsiao-Chen Wu , Chun-Lin Chang
Abstract: A method for generating an electromagnetic radiation includes the following operations. A target material is introduced in a chamber. A light beam is irradiated on the target material in the chamber to generate plasma and an electromagnetic radiation. The electromagnetic radiation is collected with an optical device. A gas mixture is introduced in the chamber. The gas mixture includes a first buffer gas reactive to the target material, and a second buffer gas to slow down debris of the target material and/or plasma by-product, so as to increase an reaction efficiency of the target material and the first buffer gas, and to reduce deposition of the debris of the target material and/or the plasma by-product on the optical device.
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公开(公告)号：US20140306119A1
公开(公告)日：2014-10-16
申请号：US14317650
申请日：2014-06-27
Inventor： Chih-Hong Hwang , Chun-Lin Chang , Nai-Han Cheng , Chi-Ming Yang , Chin-Hsiang Lin
IPC: H01J37/244
CPC classification number: H01J37/244 , H01J37/3171 , H01J2237/024 , H01J2237/24405 , H01J2237/24528 , H01J2237/24542
Abstract: A beam monitoring device, method, and system is disclosed. An exemplary beam monitoring device includes a one dimensional (1D) profiler. The 1D profiler includes a Faraday having an insulation material and a conductive material. The beam monitoring device further includes a two dimensional (2D) profiler. The 2D profiler includes a plurality of Faraday having an insulation material and a conductive material. The plurality of Faraday of the 2D profiler are arranged in a pattern that is offset in a direction. The 1D profiler is coupled to a first end of the 2D profiler and extends beyond two adjacent outer edges of the 2D profiler. The beam monitoring device further includes a control arm. The control arm is operable to facilitate movement of the beam monitoring device in the direction.
Abstract translation: 公开了一种光束监测装置，方法和系统。 示例性束监测装置包括一维（1D）轮廓仪。 1D轮廓仪包括具有绝缘材料和导电材料的法拉第。 光束监测装置还包括二维（2D）轮廓仪。 2D轮廓仪包括具有绝缘材料和导电材料的多个法拉第。 2D轮廓仪的多个法拉第以一个方向偏移的图案排列。 1D轮廓仪耦合到2D轮廓仪的第一端并延伸超过2D轮廓仪的两个相邻的外边缘。 光束监视装置还包括控制臂。 控制臂可操作以便于沿着该方向的光束监视装置的移动。
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公开(公告)号：US20130280823A1
公开(公告)日：2013-10-24
申请号：US13918731
申请日：2013-06-14
Inventor： Chun-Lin Chang , Chih-Hong Hwang , Nai-Han Cheng , Chi-Ming Yang , Chin-Hsiang Lin
IPC: H01L21/66
CPC classification number: H01L22/10 , H01J37/244 , H01J37/3171 , H01J2237/24542 , H01J2237/30455 , H01J2237/31703 , H01L21/265
Abstract: An apparatus for monitoring an ion distribution of a wafer comprises a first sensor and a sensor. The first sensor, the second senor and the wafer are placed in an effective range of a uniform ion implantation current profile. A controller determines the ion dose of each region of the wafer based upon the detected signal from the first sensor and the second senor. In addition, the controller adjusts the scanning frequency of an ion beam or the movement speed of the wafer to achieve a uniform ion distribution on the wafer.
Abstract translation: 用于监测晶片的离子分布的装置包括第一传感器和传感器。 将第一传感器，第二传感器和晶片放置在均匀离子注入电流分布的有效范围内。 控制器基于来自第一传感器和第二传感器的检测信号确定晶片的每个区域的离子剂量。 此外，控制器调节离子束的扫描频率或晶片的移动速度，以在晶片上实现均匀的离子分布。
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Patent Agency Ranking
公开(公告)号：US11800626B2
公开(公告)日：2023-10-24
申请号：US17874278
申请日：2022-07-26
Inventor： Yen-Shuo Su , Jen-Hao Yeh , Jhan-Hong Yeh , Ting-Ya Cheng , Henry Yee Shian Tong , Chun-Lin Chang , Han-Lung Chang , Li-Jui Chen , Po-Chung Cheng
Abstract: A method for monitoring a shock wave in an extreme ultraviolet light source includes irradiating a target droplet in the extreme ultraviolet light source apparatus of an extreme ultraviolet lithography tool with ionizing radiation to generate a plasma and to detect a shock wave generated by the plasma. One or more operating parameters of the extreme ultraviolet light source is adjusted based on the detected shock wave.
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公开(公告)号：US11720035B2
公开(公告)日：2023-08-08
申请号：US17459749
申请日：2021-08-27
Inventor： Chih-Ping Yen , Yen-Shuo Su , Jui-Pin Wu , Chun-Lin Chang , Han-Lung Chang , Heng-Hsin Liu
CPC classification number: G03F7/70925 , G03F7/70025 , G03F7/70033 , G03F7/70916 , G03F7/70975
Abstract: In order to prevent observed long-term energy decay of power amplifiers and correspondingly increase the lifespan of CO2 lasers employing them, a hydrogen-doped mixing gas is supplied from an external pipeline during operation or periodic maintenance in order to effectively remove solid contaminants that build-up over time on a surface of a catalyst disposed within the power amplifier.
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公开(公告)号：US11437161B1
公开(公告)日：2022-09-06
申请号：US17243300
申请日：2021-04-28
Inventor： Chun-Lin Chang , Chieh Hsieh , Shang-Chieh Chien , Han-Lung Chang , Heng-Hsin Liu , Li-Jui Chen , Chin-Hsiang Lin
Abstract: An apparatus includes an extreme ultraviolet light source vessel having an intermediate focus, a scanner having a light source aperture, and a deflection module arranged between the intermediate focus and the light source aperture. The deflection module includes a first electrode plate and a second electrode plate, configured to create an electric field therebetween. Tin particles moving from the intermediate focus to the light source aperture passes through the deflection module, and are deflected by the electric field therein.
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公开(公告)号：US10509311B1
公开(公告)日：2019-12-17
申请号：US15992017
申请日：2018-05-29
Inventor： Chung-Chieh Lee , Feng Yuan Hsu , Chyi Shyuan Chern , Chi-Ming Yang , Tsiao-Chen Wu , Chun-Lin Chang
Abstract: A method for generating an electromagnetic radiation includes the following operations. A target material is introduced in a chamber. A light beam is irradiated on the target material in the chamber to generate plasma and an electromagnetic radiation. The electromagnetic radiation is collected with an optical device. A gas mixture is introduced in the chamber. The gas mixture includes a first buffer gas reactive to the target material, and a second buffer gas to slow down debris of the target material and/or plasma by-product, so as to increase an reaction efficiency of the target material and the first buffer gas, and to reduce deposition of the debris of the target material and/or the plasma by-product on the optical device.
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公开(公告)号：US08925479B2
公开(公告)日：2015-01-06
申请号：US13674723
申请日：2012-11-12
Inventor： Keung Hui , Chun-Lin Chang , Jong-I Mou
IPC: B05C13/00 , C23C14/48 , H01J37/302 , H01J37/304 , H01J37/317 , H01L21/265 , H01L21/66
CPC classification number: C23C14/48 , H01J37/302 , H01J37/304 , H01J37/3171 , H01J2237/30461 , H01J2237/31703 , H01L21/265 , H01L22/14
Abstract: A system and method for controlling a dosage profile is disclosed. An embodiment comprises separating a wafer into components of a grid array and assigning each of the grid components a desired dosage profile based upon a test to compensate for topology differences between different regions of the wafer. The desired dosages are decomposed into directional dosage components and the directional dosage components are translated into scanning velocities of the ion beam for an ion implanter. The velocities may be fed into an ion implanter to control the wafer-to-beam velocities and, thereby, control the implantation.
Abstract translation: 公开了一种用于控制剂量分布的系统和方法。 一个实施例包括将晶片分离成网格阵列的组件，并且基于测试来分配每个网格组件所需的剂量分布，以补偿晶片的不同区域之间的拓扑差异。 期望的剂量被分解为定向剂量组分，并且定向剂量组分转化成用于离子注入机的离子束的扫描速度。 速度可以被馈送到离子注入机中以控制晶片到束的速度，从而控制植入。
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