公开(公告)号：US09599896B2

公开(公告)日：2017-03-21

申请号：US14213302

申请日：2014-03-14

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chien-Chih Chen ,  Cheng-Han Wu ,  Ching-Yu Chang

IPC: G03F7/004 ,  H01L21/027 ,  H01L21/266 ,  G03F7/42 ,  H01L21/265 ,  H01L21/311 ,  C11D11/00 ,  G03F7/09 ,  G03F7/039

CPC classification number: G03F7/0045 ,  C11D11/0047 ,  G03F7/0392 ,  G03F7/091 ,  G03F7/423 ,  G03F7/427 ,  H01L21/0274 ,  H01L21/265 ,  H01L21/2658 ,  H01L21/266 ,  H01L21/31133 ,  H01L21/31138

Abstract: In an embodiment a radical inhibitor is included within a photoresist in order to reduce the amount of cross-linking that occurs during subsequent processing, such as an ion implantation process, that would otherwise form a crust within the photoresist. The crust can be removed in a separate process, such as a dry etch with an oxidative or reductive etchant. Alternatively, the crust may be treated to make it more hydrophyilic such that it can be removed simultaneously with the photoresist.

公开(公告)号：US09341945B2

公开(公告)日：2016-05-17

申请号：US13973512

申请日：2013-08-22

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Keng-Chu Lin ,  Joung-Wei Liou ,  Cheng-Han Wu ,  Ya Hui Chang

IPC: G03F7/004 ,  G03F7/038 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213 ,  G03F7/039 ,  G03F7/11 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/0388 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/167 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/325 ,  H01L21/0271 ,  H01L21/31144 ,  H01L21/32139

Abstract: A system and method for depositing a photoresist and utilizing the photoresist are provided. In an embodiment a deposition chamber is utilized along with a first precursor material comprising carbon-carbon double bonds and a second precursor material comprising repeating units to deposit the photoresist onto a substrate. The first precursor material is turned into a plasma in a remote plasma chamber prior to being introduced into the deposition chamber. The resulting photoresist comprises a carbon backbone with carbon-carbon double bonds.

Abstract translation: 提供了一种用于沉积光致抗蚀剂并利用光致抗蚀剂的系统和方法。 在一个实施方案中，使用沉积室以及包含碳 - 碳双键的第一前体材料和包含将光致抗蚀剂沉积到基底上的重复单元的第二前体材料。 第一前体材料在被引入沉积室之前在远程等离子体室中变成等离子体。 得到的光致抗蚀剂包括具有碳 - 碳双键的碳骨架。

公开(公告)号：US20140273509A1

公开(公告)日：2014-09-18

申请号：US13800627

申请日：2013-03-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Wen-Yun Wang ,  Cheng-Han Wu ,  Yu-Chung Su ,  Ching-Yu Chang

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/67063 ,  B05B12/02 ,  B05B13/0228 ,  B05D1/005 ,  G03F7/162 ,  H01L21/02282 ,  H01L21/0273 ,  H01L21/31051 ,  H01L21/31055 ,  H01L21/31058 ,  H01L21/67028 ,  H01L21/6715

Abstract: Disclosed herein is a method of forming a coating, comprising applying a first coating to a substrate having a plurality of topographical features, planarizing a top surface of the first coating, and drying the coating after planarizing the top surface of the first coating. The first coating may be applied over the plurality of topographical features, and substantially liquid during application. The first coating may optionally be a conformal coating over topographical features of the substrate. The conformal coating may be dried prior to planarizing the top surface of the first coating and a solvent applied to the conformal coating, with the top surface of the conformal coating being substantially planar after application of the solvent. The coating may have a planar surface prior to the drying the first coating and the first coating may be dried without substantial spin-drying by modifying an environment of the first coating.

Abstract translation: 本文公开了一种形成涂层的方法，包括将第一涂层施加到具有多个形貌特征的基底上，平面化第一涂​​层的顶表面，以及在平坦化第一涂层的顶表面之后干燥涂层。 第一涂层可以施加在多个形貌特征上，并且在施用期间基本上是液体的。 第一涂层可以任选地是基底的形貌特征上的保形涂层。 在平坦化第一涂层的顶表面和施加到保形涂层的溶剂之前，保形涂层可以被干燥，在施加溶剂之后，保形涂层的顶表面基本上是平面的。 在干燥第一涂层之前，涂层可以具有平坦的表面，并且可以通过改变第一涂层的环境来干燥第一涂层而无需实质的旋转干燥。

公开(公告)号：US20230384680A1

公开(公告)日：2023-11-30

申请号：US18365529

申请日：2023-08-04

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wen-Zhan Zhou ,  Heng-Jen Lee ,  Hsu-Yuan Liu ,  Yu-Chen Huang ,  Cheng-Han Wu ,  Shih-Che Wang ,  Ho-Yung David Hwang

IPC: G03F7/16 ,  B67D7/02 ,  B67D7/36 ,  B67D7/78

CPC classification number: G03F7/16 ,  B67D7/0294 ,  B67D7/36 ,  B67D7/78 ,  Y10T137/0318 ,  Y10T137/86187

Abstract: A method of supplying a chemical solution to a photolithography system. The chemical solution is pumped from a variable-volume buffer tank. The pumped chemical solution is dispensed in a spin-coater. The variable-volume buffer tank is refilled by emptying a storage container filled with the chemical solution into the variable-volume buffer tank.

公开(公告)号：US20160274463A1

公开(公告)日：2016-09-22

申请号：US14658354

申请日：2015-03-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Wei-Han Lai ,  Ching-Yu Chang ,  Cheng-Han Wu ,  Siao-Shan Wang ,  Chin-Hsiang Lin

IPC: G03F7/32 ,  G03F7/40 ,  G03F7/38 ,  G03F7/16 ,  G03F7/20

CPC classification number: G03F7/325 ,  G03F7/0382 ,  G03F7/38 ,  G03F7/40

Abstract: A material layer is formed over a substrate. A negative tone photoresist layer is formed over the material layer. An exposure process is performed to the negative tone photoresist layer. A post-exposure bake (PEB) process is performed to the negative tone photoresist layer. After the exposure process and the PEB process, the negative tone photoresist layer is treated with a solvent. The solvent contains a chemical having a greater dipole moment than n-butyl acetate (n-BA).

Abstract translation: 在衬底上形成材料层。 在材料层上形成负色调光致抗蚀剂层。 对负色调光致抗蚀剂层进行曝光处理。 对负色光致抗蚀剂层进行后曝光烘焙（PEB）处理。 在曝光处理和PEB处理之后，用溶剂处理负色调光致抗蚀剂层。 溶剂含有比乙酸正丁酯（n-BA）具有更大的偶极矩的化学物质。

公开(公告)号：US09449971B2

公开(公告)日：2016-09-20

申请号：US14557261

申请日：2014-12-01

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Kuo-Chiang TIng ,  Jyh-Huei Chen ,  Wen-Huei Guo ,  Cheng-Han Wu ,  Yu-Wei Lee

IPC: H01L35/24 ,  H01L51/00 ,  H01L27/088 ,  H01L29/06 ,  H01L21/8234 ,  H01L29/66

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L29/0653 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/6681

Abstract: An embodiment is a method including forming a first fin on a substrate, the first fin having a first longitudinal axis, forming a first trench having a first width in the first fin, the first trench dividing the first fin into at least two fin portions, forming a first gate structure and first source/drain regions over one of the at least two fin portions of the first fin, and forming a second gate structure and second source/drain regions over another of the at least two fin portions of the first fin.

Abstract translation: 一个实施例是一种方法，包括在衬底上形成第一鳍片，第一鳍片具有第一纵向轴线，在第一鳍片中形成具有第一宽度的第一沟槽，第一沟槽将第一鳍片分成至少两个翅片部分， 在第一鳍片的至少两个翅片部分中的一个上形成第一栅极结构和第一源极/漏极区域，并且在第一鳍片的至少两个翅片部分中的另一个上形成第二栅极结构和第二源极/漏极区域 。

公开(公告)号：US20160260623A1

公开(公告)日：2016-09-08

申请号：US15153593

申请日：2016-05-12

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wen-Yun Wang ,  Cheng-Han Wu ,  Yu-Chung Su ,  Ching-Yu Chang

IPC: H01L21/67 ,  H01L21/02 ,  G03F7/16 ,  B05B13/02 ,  B05B12/02 ,  H01L21/3105 ,  H01L21/027

CPC classification number: H01L21/67063 ,  B05B12/02 ,  B05B13/0228 ,  B05D1/005 ,  G03F7/162 ,  H01L21/02282 ,  H01L21/0273 ,  H01L21/31051 ,  H01L21/31055 ,  H01L21/31058 ,  H01L21/67028 ,  H01L21/6715

Abstract: A system for forming a coating comprises applying a first coating to a substrate having a plurality of topographical features, planarizing a top surface of the first coating, and drying the first coating after planarizing the top surface. The first coating may be applied over the plurality of topographical features, and may be substantially liquid during application. The first coating may optionally be a conformal coating over topographical features of the substrate. The conformal coating may be dried prior to planarizing the top surface of the first coating. A solvent may be applied to the conformal coating, with the top surface of the conformal coating being substantially planar after application of the solvent. The first coating may have a planar surface prior to drying the first coating, and the first coating may be dried without substantial spin-drying by modifying an environment of the first coating.

Abstract translation: 用于形成涂层的系统包括将第一涂层施加到具有多个形貌特征的基底，平面化第一涂​​层的顶表面，以及在平坦化顶表面之后干燥第一涂层。 第一涂层可以施加在多个形貌特征上，并且在施加期间可以是基本上液体的。 第一涂层可以任选地是基底的形貌特征上的保形涂层。 可以在使第一涂层的顶表面平坦化之前干燥保形涂层。 可以将溶剂施加到保形涂层，在施加溶剂之后，保形涂层的顶表面基本上是平面的。 第一涂层可以在干燥第一涂层之前具有平坦表面，并且可以通过改变第一涂层的环境来干燥第一涂层而无需实质的旋转干燥。

公开(公告)号：US20150132910A1

公开(公告)日：2015-05-14

申请号：US14537631

申请日：2014-11-10

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yu Chao Lin ,  Cheng-Han Wu ,  Eric Chih-Fang Liu ,  Ryan Chia-Jen Chen ,  Chao-Cheng Chen

IPC: H01L29/66 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L29/6681 ,  H01L21/0234 ,  H01L21/02359 ,  H01L21/31111 ,  H01L21/823431 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211

Abstract: Embodiments of the present disclosure are a method of forming a semiconductor device and a method of forming a FinFET device. An embodiment is a method of forming a semiconductor device, the method including forming a first dielectric layer over a substrate, forming a first hardmask layer on the first dielectric layer, and patterning the first hardmask layer to form a first hardmask portion with a first width. The method further includes forming a second dielectric layer on the first dielectric layer and the first hardmask portion, forming a third dielectric layer on the second dielectric layer, and etching the third dielectric layer and a portion of the second dielectric layer to form a first and second spacer on opposite sides of the first hardmask portion.

Abstract translation: 本公开的实施例是形成半导体器件的方法和形成FinFET器件的方法。 一个实施例是一种形成半导体器件的方法，该方法包括在衬底上形成第一介电层，在第一介电层上形成第一硬掩模层，以及对第一硬掩模层进行构图以形成具有第一宽度的第一硬掩模部分 。 该方法还包括在第一电介质层和第一硬掩模部分上形成第二电介质层，在第二电介质层上形成第三电介质层，以及蚀刻第三电介质层和第二电介质层的一部分以形成第一和第 第二垫片在第一硬掩模部分的相对侧上。

公开(公告)号：US08900937B2

公开(公告)日：2014-12-02

申请号：US13826310

申请日：2013-03-14

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yu-Chao Lin ,  Cheng-Han Wu ,  Eric Chih-Fang Liu ,  Ryan Chia-Jen Chen ,  Chao-Cheng Chen

IPC: H01L21/84 ,  H01L29/66

CPC classification number: H01L29/6681 ,  H01L21/0234 ,  H01L21/02359 ,  H01L21/31111 ,  H01L21/823431 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211

Abstract: Embodiments of the present disclosure are a method of forming a semiconductor device and a method of forming a FinFET device. An embodiment is a method of forming a semiconductor device, the method including forming a first dielectric layer over a substrate, forming a first hardmask layer on the first dielectric layer, and patterning the first hardmask layer to form a first hardmask portion with a first width. The method further includes forming a second dielectric layer on the first dielectric layer and the first hardmask portion, forming a third dielectric layer on the second dielectric layer, and etching the third dielectric layer and a portion of the second dielectric layer to form a first and second spacer on opposite sides of the first hardmask portion.

Abstract translation: 本公开的实施例是形成半导体器件的方法和形成FinFET器件的方法。 一个实施例是一种形成半导体器件的方法，该方法包括在衬底上形成第一介电层，在第一介电层上形成第一硬掩模层，以及对第一硬掩模层进行构图以形成具有第一宽度的第一硬掩模部分 。 该方法还包括在第一电介质层和第一硬掩模部分上形成第二电介质层，在第二电介质层上形成第三电介质层，以及蚀刻第三电介质层和第二电介质层的一部分以形成第一和第 第二垫片在第一硬掩模部分的相对侧上。

公开(公告)号：US11581217B2

公开(公告)日：2023-02-14

申请号：US17346756

申请日：2021-06-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Tzu-Yang Lin ,  Cheng-Han Wu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: H01L21/00 ,  H01L21/768 ,  H01L21/033 ,  H01L21/027

Abstract: A method for forming openings in an underlayer includes: forming a photoresist layer on an underlayer formed on a substrate; exposing the photoresist layer; forming photoresist patterns by developing the exposed photoresist layer, the photoresist patterns covering regions of the underlayer in which the openings are to be formed; forming a liquid layer over the photoresist patterns; after forming the liquid layer, performing a baking process so as to convert the liquid layer to an organic layer in a solid form; performing an etching back process to remove a portion of the organic layer on a level above the photoresist patterns; removing the photoresist patterns, so as to expose portions of the underlayer by the remaining portion of the organic layer; forming the openings in the underlayer by using the remaining portion of the organic layer as an etching mask; and removing the remaining portion of the organic layer.