Invention Grant
- Patent Title: Methods of forming FinFETs
- Patent Title (中): 形成FinFET的方法
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Application No.: US14557261Application Date: 2014-12-01
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Publication No.: US09449971B2Publication Date: 2016-09-20
- Inventor: Kuo-Chiang TIng , Jyh-Huei Chen , Wen-Huei Guo , Cheng-Han Wu , Yu-Wei Lee
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L35/24
- IPC: H01L35/24 ; H01L51/00 ; H01L27/088 ; H01L29/06 ; H01L21/8234 ; H01L29/66

Abstract:
An embodiment is a method including forming a first fin on a substrate, the first fin having a first longitudinal axis, forming a first trench having a first width in the first fin, the first trench dividing the first fin into at least two fin portions, forming a first gate structure and first source/drain regions over one of the at least two fin portions of the first fin, and forming a second gate structure and second source/drain regions over another of the at least two fin portions of the first fin.
Public/Granted literature
- US20160155739A1 FINFETS AND METHODS OF FORMING FINFETS Public/Granted day:2016-06-02
Information query
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