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公开(公告)号：US20240126170A1
公开(公告)日：2024-04-18
申请号：US18200495
申请日：2023-05-22
发明人： Chun-Chih HO , Chin-Hsiang Lin , Ching-Yu Chang
IPC分类号： G03F7/038 , G03F7/20 , H01L21/027
CPC分类号： G03F7/0382 , G03F7/2004 , H01L21/0275
摘要： A method of manufacturing a semiconductor device includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation, the selectively exposed photoresist layer is developed to form a pattern in the photoresist layer. The photoresist composition includes a polymer including monomer units with photocleaving promoters, wherein the photocleaving promoters are one or more selected from the group consisting of living free radical polymerization chain transfer agents, electron withdrawing groups, bulky two dimensional (2-D) or three dimensional (3-D) organic groups, N-(acyloxy)phthalimides, and electron stimulated radical generators.
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公开(公告)号：US20240118618A1
公开(公告)日：2024-04-11
申请号：US18133933
申请日：2023-04-12
发明人： Chun-Chih HO , Ching-Yu Chang , Chin-Hsiang Lin
IPC分类号： G03F7/075 , H01L21/027
CPC分类号： G03F7/0757 , H01L21/0276
摘要： A method of manufacturing a semiconductor device includes forming a first layer having an organic material over a substrate. A second layer is formed over the first layer, wherein the second layer includes a silicon-containing polymer having pendant acid groups or pendant photoacid generator groups. The forming a second layer includes: forming a layer of a composition including a silicon-based polymer and a material containing an acid group or photoacid generator group over the first layer, floating the material containing an acid group or photoacid generator group over the silicon-based polymer, and reacting the material containing an acid group or photoacid generator group with the silicon-based polymer to form an upper second layer including a silicon-based polymer having pendant acid groups or pendant photoacid generator groups overlying a lower second layer comprising the silicon-based polymer. A photosensitive layer is formed over the second layer, and the photosensitive layer is patterned.
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公开(公告)号：US11762296B2
公开(公告)日：2023-09-19
申请号：US17815662
申请日：2022-07-28
发明人： An-Ren Zi , Ching-Yu Chang
CPC分类号： G03F7/2022 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/203 , G03F7/322 , G03F7/325 , H01L21/0271
摘要： A method of forming a masking element is provided. The method includes forming a photoresist material having a polymer backbone over a substrate, where the polymer backbone includes a linking group that links a first polymer segment to a second polymer segment, each of the first and the second polymer segments having an ultraviolet (UV) curable group. The method includes exposing the photoresist material under a first UV radiation to break the link between the first polymer segment and the second polymer segment. The method includes exposing the photoresist material under a second UV radiation different from the first UV radiation to form a patterned resist layer. And the method includes developing the patterned resist layer to form a masking element.
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公开(公告)号：US11728161B2
公开(公告)日：2023-08-15
申请号：US17864293
申请日：2022-07-13
发明人： Jing Hong Huang , Ching-Yu Chang , Wei-Han Lai
IPC分类号： H01L21/02
CPC分类号： H01L21/02167 , H01L21/02115
摘要： A spin on carbon composition, comprises: a carbon backbone polymer; a first crosslinker; and a second crosslinker. The first crosslinker reacts with the carbon backbone polymer to partially crosslink the carbon backbone polymer at a first temperature, and the second crosslinker reacts with the carbon backbone polymer to further crosslink the carbon backbone polymer at a second temperature higher than the first temperature. The first crosslinker is a monomer, oligomer, or polymer. The second crosslinker is a monomer, oligomer, or polymer. The first and second crosslinkers are different from each other. When either of the first crosslinker or the second crosslinker is a polymer, the polymer is a different polymer than the carbon backbone polymer.
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公开(公告)号：US11656553B2
公开(公告)日：2023-05-23
申请号：US17315595
申请日：2021-05-10
发明人： Li-Yen Lin , Ching-Yu Chang , Chin-Hsiang Lin
IPC分类号： G03F7/20 , G03F7/16 , H01L21/311 , H01L21/033 , G03F7/09 , G03F7/039 , H01L21/027 , G03F7/004
CPC分类号： G03F7/70025 , G03F7/0045 , G03F7/0397 , G03F7/094 , G03F7/168 , G03F7/70033 , H01L21/0273 , H01L21/0332 , H01L21/31105 , H01L21/31144
摘要： A method for forming a semiconductor device structure is provided. The method includes forming a material layer over a substrate and forming a resist layer over the material layer. The method includes exposing a portion of the resist layer. The resist layer includes a photoacid generator (PAG) group, a quencher group, an acid-labile group (ALG) and a polar unit (PU). The method also includes performing a baking process on the resist layer and developing the resist layer to form a patterned resist layer. The method further includes doping a portion of the material layer by using the patterned resist layer as a mask to form a doped region. In addition, the method includes removing the patterned resist layer.
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公开(公告)号：US20230087992A1
公开(公告)日：2023-03-23
申请号：US17695069
申请日：2022-03-15
发明人： Wei-Che Hsieh , Yu-Chung Su , Chia-Ching Chu , Tzu-Yi Wang , Ta-Cheng Lien , Hsin-Chang Lee , Ching-Yu Chang , Yahru Cheng
摘要： Photosensitive polymers and their use in photoresists for photolithographic processes are disclosed. The polymers are copolymers, with at least one monomer that includes pendant polycyclic aromatic groups and a second monomer that includes an acidic leaving group (ALG). The polymers have high resistance to etching and high development contrast.
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公开(公告)号：US11069528B2
公开(公告)日：2021-07-20
申请号：US16583949
申请日：2019-09-26
发明人： Ching-Yu Chang , Jung-Hau Shiu , Jen Hung Wang , Tze-Liang Lee
IPC分类号： H01L21/033 , H01L21/311 , H01L21/3213 , H01L21/02 , H01L29/66 , H01L21/768
摘要： A method for manufacturing an integrated circuit includes patterning a plurality of photomask layers over a substrate, partially backfilling the patterned plurality of photomask layers with a first material using atomic layer deposition, completely backfilling the patterned plurality of photomask layers with a second material using atomic layer deposition, removing the plurality of photomask layers to form a masking structure comprising at least one of the first and second materials, and transferring a pattern formed by the masking structure to the substrate and removing the masking structure. The first material includes a silicon dioxide, silicon carbide, or carbon material, and the second material includes a metal oxide or metal nitride material.
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公开(公告)号：US10655019B2
公开(公告)日：2020-05-19
申请号：US14788321
申请日：2015-06-30
发明人： Ya-Ling Cheng , Ching-Yu Chang
IPC分类号： B05D1/00 , C09D5/00 , H01L21/027 , H01L21/67 , C09D7/20 , G03F7/16 , B05D5/12 , B05D7/00 , B05D3/02 , B05D3/12
摘要： A coating technique and a priming material are provided. In an exemplary embodiment, the coating technique includes receiving a substrate and applying a priming material to the substrate. The applying of the priming material may include rotating the substrate to disperse the priming material radially on the substrate. In the embodiment, the priming material includes a solvent with at least six carbon atoms per molecule. A film-forming material is applied to the substrate on the priming material, and the application includes rotating the substrate to disperse the film-forming material radially on the substrate. The priming material and the film-forming material are evaporated to leave a component of the film-forming material in a solid form. In various embodiments, the priming material is selected based on at least one of an evaporation rate, a viscosity, or an intermolecular force between the priming material and the film-forming material.
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公开(公告)号：US20200064740A1
公开(公告)日：2020-02-27
申请号：US16671401
申请日：2019-11-01
发明人： An-Ren Zi , Ching-Yu Chang
摘要： A method of making a semiconductor device is provided. The method includes forming a photoresist material over a substrate, the photoresist material having a polymer that includes a backbone having a segment and a linking group, the segment including a carbon chain and an ultraviolet (UV) curable group, the UV curable group coupled to the carbon chain and to the linking group; performing a first exposure process that breaks the backbone of the polymer via decoupling the linking group from the connected UV curable group of each segment; performing a second exposure process to form a patterned photoresist layer; and developing the patterned photoresist layer.
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公开(公告)号：US10514603B2
公开(公告)日：2019-12-24
申请号：US16525120
申请日：2019-07-29
发明人： Wei-Han Lai , Ching-Yu Chang , Chen-Hau Wu
摘要： Shrinkage and mass losses are reduced in photoresist exposure and post exposure baking by utilizing a small group which will decompose. Alternatively a bulky group which will not decompose or a combination of the small group which will decompose along with the bulky group which will not decompose can be utilized. Additionally, polar functional groups may be utilized in order to reduce the diffusion of reactants through the photoresist.
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