公开(公告)号：US11049763B2

公开(公告)日：2021-06-29

申请号：US16694406

申请日：2019-11-25

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chun-Kai Chen ,  Jung-Hau Shiu ,  Chia Cheng Chou ,  Chung-Chi Ko ,  Tze-Liang Lee ,  Chih-Hao Chen ,  Shing-Chyang Pan

IPC分类号： H01L21/768 ,  H01L21/311

摘要： A method includes forming a carbon-containing layer with a carbon atomic percentage greater than about 25 percent over a first hard mask layer, forming a capping layer over the carbon-containing layer, forming a first photo resist over the capping layer, and etching the capping layer and the carbon-containing layer using the first photo resist as a first etching mask. The first photo resist is then removed. A second photo resist is formed over the capping layer. The capping layer and the carbon-containing layer are etched using the second photo resist as a second etching mask. The second photo resist is removed. A third photo resist under the carbon-containing layer is etched using the carbon-containing layer as etching mask. A dielectric layer underlying the third photo resist is etched to form via openings using the third photo resist as etching mask. The via openings are filled with a conductive material.

公开(公告)号：US10727045B2

公开(公告)日：2020-07-28

申请号：US15967480

申请日：2018-04-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wan-Lin Tsai ,  Jung-Hau Shiu ,  Ching-Yu Chang ,  Jen Hung Wang ,  Shing-Chyang Pan ,  Tze-Liang Lee

IPC分类号： H01L21/768 ,  C23C16/02 ,  H01L21/311 ,  H01L23/528 ,  H01L21/02 ,  H01L21/033 ,  H01L21/8238 ,  C23C16/04 ,  C23C16/30 ,  C23C16/455 ,  C23C16/40 ,  C23C14/08 ,  C23C14/06 ,  H01L21/308 ,  H01L29/66 ,  H01J37/32 ,  C23C14/22

摘要： A method of manufacturing a semiconductor device includes depositing a dielectric layer over a substrate, performing a first patterning to form an opening in the dielectric layer, and depositing an oxide film over and contacting the dielectric layer and within the opening in the dielectric layer. The oxide film is formed from multiple precursors that are free of O2, and depositing the oxide film includes forming a plasma of a first precursor of the multiple precursors.

公开(公告)号：US09754818B2

公开(公告)日：2017-09-05

申请号：US15226199

申请日：2016-08-02

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jung-Hau Shiu ,  Chung-Chi Ko ,  Tze-Liang Lee ,  Wen-Kuo Hsieh ,  Yu-Yun Peng

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/033 ,  H01L21/311

CPC分类号： H01L21/76811 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76816 ,  H01L21/76831 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295

摘要： A method includes forming a dielectric layer, forming a photo resist over the dielectric layer, forming a first mask layer over the photo resist, and forming a second mask layer over the first mask layer. A first-photo-first-etching is performed to form a first via pattern in the second mask layer, wherein the first-photo-first-etching stops on a top surface of the first mask layer. A second-photo-second-etching is performed to form a second via pattern in the second mask layer, wherein the second-photo-second-etching stops on the top surface of the first mask layer. The first mask layer is etched using the second mask layer as an etching mask. The photo resist and the dielectric layer are etched to simultaneously transfer the first via pattern and the second via pattern into the dielectric layer.

公开(公告)号：US10978301B2

公开(公告)日：2021-04-13

申请号：US16118851

申请日：2018-08-31

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ching-Yu Chang ,  Jung-Hau Shiu ,  Wei-Ren Wang ,  Shing-Chyang Pan ,  Tze-Liang Lee

IPC分类号： H01L21/027 ,  H01L21/02 ,  H01L21/033 ,  H01L21/768 ,  H01L21/311 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/3105

摘要： Embodiments provide a patterning process. A photoresist layer is patterned. At least portions of the photoresist layer are converted from an organic material to an inorganic material by a deposition process of a metal oxide. All or some of the patterned photoresist layer may be converted to a carbon-metal-oxide. A metal oxide crust may be formed over the patterned photoresist layer. After conversion, the patterned photoresist layer is used as an etch mask to etch an underlying layer.

公开(公告)号：US20200075319A1

公开(公告)日：2020-03-05

申请号：US16118851

申请日：2018-08-31

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ching-Yu Chang ,  Jung-Hau Shiu ,  Wei-Ren Wang ,  Shing-Chyang Pan ,  Tze-Liang Lee

IPC分类号： H01L21/027 ,  H01L21/311 ,  H01L21/02 ,  H01L21/033 ,  H01L21/768

摘要： Embodiments provide a patterning process. A photoresist layer is patterned. At least portions of the photoresist layer are converted from an organic material to an inorganic material by a deposition process of a metal oxide. All or some of the patterned photoresist layer may be converted to a carbon-metal-oxide. A metal oxide crust may be formed over the patterned photoresist layer. After conversion, the patterned photoresist layer is used as an etch mask to etch an underlying layer.

公开(公告)号：US10510585B2

公开(公告)日：2019-12-17

申请号：US15596671

申请日：2017-05-16

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chun-Kai Chen ,  Jung-Hau Shiu ,  Chia Cheng Chou ,  Chung-Chi Ko ,  Tze-Liang Lee ,  Chih-Hao Chen ,  Shing-Chyang Pan

IPC分类号： H01L21/768

摘要： A method includes forming a carbon-containing layer with a carbon atomic percentage greater than about 25 percent over a first hard mask layer, forming a capping layer over the carbon-containing layer, forming a first photo resist over the capping layer, and etching the capping layer and the carbon-containing layer using the first photo resist as a first etching mask. The first photo resist is then removed. A second photo resist is formed over the capping layer. The capping layer and the carbon-containing layer are etched using the second photo resist as a second etching mask. The second photo resist is removed. A third photo resist under the carbon-containing layer is etched using the carbon-containing layer as etching mask. A dielectric layer underlying the third photo resist is etched to form via openings using the third photo resist as etching mask. The via openings are filled with a conductive material.

公开(公告)号：US10510584B2

公开(公告)日：2019-12-17

申请号：US16458816

申请日：2019-07-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jung-Hau Shiu ,  Chung-Chi Ko ,  Tze-Liang Lee ,  Wen-Kuo Hsieh ,  Yu-Yun Peng

IPC分类号： H01L21/768 ,  H01L21/033 ,  H01L23/532 ,  H01L23/522 ,  H01L21/311

摘要： A method includes forming a dielectric layer, forming a photo resist over the dielectric layer, forming a first mask layer over the photo resist, and forming a second mask layer over the first mask layer. A first-photo-first-etching is performed to form a first via pattern in the second mask layer, wherein the first-photo-first-etching stops on a top surface of the first mask layer. A second-photo-second-etching is performed to form a second via pattern in the second mask layer, wherein the second-photo-second-etching stops on the top surface of the first mask layer. The first mask layer is etched using the second mask layer as an etching mask. The photo resist and the dielectric layer are etched to simultaneously transfer the first via pattern and the second via pattern into the dielectric layer.

公开(公告)号：US20200312662A1

公开(公告)日：2020-10-01

申请号：US16369501

申请日：2019-03-29

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ching-Yu Chang ,  Jung-Hau Shiu ,  Szu-Ping Tung ,  Chun-Kai Chen ,  Jen Hung Wang ,  Tze-Liang Lee

IPC分类号： H01L21/033 ,  H01L21/027

摘要： A hard mask formed over a patterned photoresist layer in a tri-layer photoresist and a method for patterning a target layer using the same are disclosed. In an embodiment, a method includes depositing a photoresist layer over a first hard mask layer; patterning the photoresist layer to form a plurality of openings in the photoresist layer; depositing a second hard mask layer over the photoresist layer, the second hard mask layer filling the plurality of openings, the second hard mask layer having a first etch selectivity relative to the first hard mask layer, the photoresist layer having a second etch selectivity relative to the first hard mask layer, the first etch selectivity being greater than the second etch selectivity; planarizing the second hard mask layer; removing the photoresist layer; and etching the first hard mask layer using the second hard mask layer as a mask.

公开(公告)号：US20190096752A1

公开(公告)日：2019-03-28

申请号：US16199847

申请日：2018-11-26

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jung-Hau Shiu ,  Chung-Chi Ko ,  Tze-Liang Lee ,  Wen-Kuo Hsieh ,  Yu-Yun Peng

IPC分类号： H01L21/768 ,  H01L21/033 ,  H01L23/522 ,  H01L23/532 ,  H01L21/311

CPC分类号： H01L21/76811 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76816 ,  H01L21/76831 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295

摘要： A method includes forming a dielectric layer, forming a photo resist over the dielectric layer, forming a first mask layer over the photo resist, and forming a second mask layer over the first mask layer. A first-photo-first-etching is performed to form a first via pattern in the second mask layer, wherein the first-photo-first-etching stops on a top surface of the first mask layer. A second-photo-second-etching is performed to form a second via pattern in the second mask layer, wherein the second-photo-second-etching stops on the top surface of the first mask layer. The first mask layer is etched using the second mask layer as an etching mask. The photo resist and the dielectric layer are etched to simultaneously transfer the first via pattern and the second via pattern into the dielectric layer.

公开(公告)号：US10141220B2

公开(公告)日：2018-11-27

申请号：US15693949

申请日：2017-09-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jung-Hau Shiu ,  Chung-Chi Ko ,  Tze-Liang Lee ,  Wen-Kuo Hsieh ,  Yu-Yun Peng

IPC分类号： H01L21/768 ,  H01L21/311 ,  H01L23/522 ,  H01L21/033 ,  H01L23/532

摘要： A method includes forming a dielectric layer, forming a photo resist over the dielectric layer, forming a first mask layer over the photo resist, and forming a second mask layer over the first mask layer. A first-photo-first-etching is performed to form a first via pattern in the second mask layer, wherein the first-photo-first-etching stops on a top surface of the first mask layer. A second-photo-second-etching is performed to form a second via pattern in the second mask layer, wherein the second-photo-second-etching stops on the top surface of the first mask layer. The first mask layer is etched using the second mask layer as an etching mask. The photo resist and the dielectric layer are etched to simultaneously transfer the first via pattern and the second via pattern into the dielectric layer.