公开(公告)号：US09679804B1

公开(公告)日：2017-06-13

申请号：US15223572

申请日：2016-07-29

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chun-Kai Chen ,  Jung-Hau Shiu ,  Chia Cheng Chou ,  Chung-Chi Ko ,  Tze-Liang Lee ,  Chih-Hao Chen ,  Shing-Chyang Pan

IPC分类号： H01L21/4763 ,  H01L21/768 ,  H01L21/02 ,  H01L21/311

CPC分类号： H01L21/76813 ,  H01L21/31144 ,  H01L21/7681 ,  H01L21/76811 ,  H01L21/76816 ,  H01L21/76829

摘要： A method includes forming a carbon-containing layer with a carbon atomic percentage greater than about 25 percent over a first hard mask layer, forming a capping layer over the carbon-containing layer, forming a first photo resist over the capping layer, and etching the capping layer and the carbon-containing layer using the first photo resist as a first etching mask. The first photo resist is then removed. A second photo resist is formed over the capping layer. The capping layer and the carbon-containing layer are etched using the second photo resist as a a second etching mask. The second photo resist is removed. A third photo resist under the carbon-containing layer is etched using the carbon-containing layer as etching mask. A dielectric layer underlying the third photo resist is etched to form via openings using the third photo resist as etching mask. The via openings are filled with a conductive material.

公开(公告)号：US11049763B2

公开(公告)日：2021-06-29

申请号：US16694406

申请日：2019-11-25

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chun-Kai Chen ,  Jung-Hau Shiu ,  Chia Cheng Chou ,  Chung-Chi Ko ,  Tze-Liang Lee ,  Chih-Hao Chen ,  Shing-Chyang Pan

IPC分类号： H01L21/768 ,  H01L21/311

摘要： A method includes forming a carbon-containing layer with a carbon atomic percentage greater than about 25 percent over a first hard mask layer, forming a capping layer over the carbon-containing layer, forming a first photo resist over the capping layer, and etching the capping layer and the carbon-containing layer using the first photo resist as a first etching mask. The first photo resist is then removed. A second photo resist is formed over the capping layer. The capping layer and the carbon-containing layer are etched using the second photo resist as a second etching mask. The second photo resist is removed. A third photo resist under the carbon-containing layer is etched using the carbon-containing layer as etching mask. A dielectric layer underlying the third photo resist is etched to form via openings using the third photo resist as etching mask. The via openings are filled with a conductive material.

公开(公告)号：US10510585B2

公开(公告)日：2019-12-17

申请号：US15596671

申请日：2017-05-16

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chun-Kai Chen ,  Jung-Hau Shiu ,  Chia Cheng Chou ,  Chung-Chi Ko ,  Tze-Liang Lee ,  Chih-Hao Chen ,  Shing-Chyang Pan

IPC分类号： H01L21/768

摘要： A method includes forming a carbon-containing layer with a carbon atomic percentage greater than about 25 percent over a first hard mask layer, forming a capping layer over the carbon-containing layer, forming a first photo resist over the capping layer, and etching the capping layer and the carbon-containing layer using the first photo resist as a first etching mask. The first photo resist is then removed. A second photo resist is formed over the capping layer. The capping layer and the carbon-containing layer are etched using the second photo resist as a second etching mask. The second photo resist is removed. A third photo resist under the carbon-containing layer is etched using the carbon-containing layer as etching mask. A dielectric layer underlying the third photo resist is etched to form via openings using the third photo resist as etching mask. The via openings are filled with a conductive material.

公开(公告)号：US11715640B2

公开(公告)日：2023-08-01

申请号：US17213723

申请日：2021-03-26

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Szu-Ping Tung ,  Chun-Kai Chen ,  Tze-Liang Lee ,  Yi-Nien Su

IPC分类号： H01L21/308 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311

CPC分类号： H01L21/3081 ,  H01L21/0274 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/311 ,  H01L21/31105 ,  H01L21/31116 ,  H01L21/31127 ,  H01L21/31138 ,  H01L21/31144

摘要： In one exemplary aspect, the present disclosure is directed to a method for lithography patterning. The method includes providing a substrate and forming a target layer over the substrate. A patterning layer is formed by depositing a first layer having an organic composition; depositing a second layer including over 50 atomic percent of silicon; and depositing a photosensitive layer on the second layer. In some implementations, the second layer is deposited by ALD, CVD, or PVD processes.

公开(公告)号：US20200090984A1

公开(公告)日：2020-03-19

申请号：US16694406

申请日：2019-11-25

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chun-Kai Chen ,  Jung-Hau Shiu ,  Chia Cheng Chou ,  Chung-Chi Ko ,  Tze-Liang Lee ,  Chih-Hao Chen ,  Shing-Chyang Pan

IPC分类号： H01L21/768 ,  H01L21/311

摘要： A method includes forming a carbon-containing layer with a carbon atomic percentage greater than about 25 percent over a first hard mask layer, forming a capping layer over the carbon-containing layer, forming a first photo resist over the capping layer, and etching the capping layer and the carbon-containing layer using the first photo resist as a first etching mask. The first photo resist is then removed. A second photo resist is formed over the capping layer. The capping layer and the carbon-containing layer are etched using the second photo resist as a second etching mask. The second photo resist is removed. A third photo resist under the carbon-containing layer is etched using the carbon-containing layer as etching mask. A dielectric layer underlying the third photo resist is etched to form via openings using the third photo resist as etching mask. The via openings are filled with a conductive material.

公开(公告)号：US20180033685A1

公开(公告)日：2018-02-01

申请号：US15596671

申请日：2017-05-16

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chun-Kai Chen ,  Jung-Hau Shiu ,  Chia Cheng Chou ,  Chung-Chi Ko ,  Tze-Liang Lee ,  Chih-Hao Chen ,  Shing-Chyang Pan

IPC分类号： H01L21/768 ,  H01L21/311 ,  H01L21/02

摘要： A method includes forming a carbon-containing layer with a carbon atomic percentage greater than about 25 percent over a first hard mask layer, forming a capping layer over the carbon-containing layer, forming a first photo resist over the capping layer, and etching the capping layer and the carbon-containing layer using the first photo resist as a first etching mask. The first photo resist is then removed. A second photo resist is formed over the capping layer. The capping layer and the carbon-containing layer are etched using the second photo resist as a second etching mask. The second photo resist is removed. A third photo resist under the carbon-containing layer is etched using the carbon-containing layer as etching mask. A dielectric layer underlying the third photo resist is etched to form via openings using the third photo resist as etching mask. The via openings are filled with a conductive material.

公开(公告)号：US20230377897A1

公开(公告)日：2023-11-23

申请号：US18357038

申请日：2023-07-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Szu-Ping Tung ,  Chun-Kai Chen ,  Yi-Nien Su

IPC分类号： H01L21/308 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311

CPC分类号： H01L21/3081 ,  H01L21/0274 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31105 ,  H01L21/31144 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31127 ,  H01L21/311

摘要： In one exemplary aspect, the present disclosure is directed to a method for lithography patterning. The method includes providing a substrate and forming a target layer over the substrate. A patterning layer is formed by depositing a first layer having an organic composition; depositing a second layer including over 50 atomic percent of silicon; and depositing a photosensitive layer on the second layer. In some implementations, the second layer is deposited by ALD, CVD, or PVD processes.

公开(公告)号：US20200312662A1

公开(公告)日：2020-10-01

申请号：US16369501

申请日：2019-03-29

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ching-Yu Chang ,  Jung-Hau Shiu ,  Szu-Ping Tung ,  Chun-Kai Chen ,  Jen Hung Wang ,  Tze-Liang Lee

IPC分类号： H01L21/033 ,  H01L21/027

摘要： A hard mask formed over a patterned photoresist layer in a tri-layer photoresist and a method for patterning a target layer using the same are disclosed. In an embodiment, a method includes depositing a photoresist layer over a first hard mask layer; patterning the photoresist layer to form a plurality of openings in the photoresist layer; depositing a second hard mask layer over the photoresist layer, the second hard mask layer filling the plurality of openings, the second hard mask layer having a first etch selectivity relative to the first hard mask layer, the photoresist layer having a second etch selectivity relative to the first hard mask layer, the first etch selectivity being greater than the second etch selectivity; planarizing the second hard mask layer; removing the photoresist layer; and etching the first hard mask layer using the second hard mask layer as a mask.