- 专利标题: Priming material for substrate coating
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申请号: US14788321申请日: 2015-06-30
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公开(公告)号: US10655019B2公开(公告)日: 2020-05-19
- 发明人: Ya-Ling Cheng , Ching-Yu Chang
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Haynes and Boone, LLP
- 主分类号: B05D1/00
- IPC分类号: B05D1/00 ; C09D5/00 ; H01L21/027 ; H01L21/67 ; C09D7/20 ; G03F7/16 ; B05D5/12 ; B05D7/00 ; B05D3/02 ; B05D3/12
摘要:
A coating technique and a priming material are provided. In an exemplary embodiment, the coating technique includes receiving a substrate and applying a priming material to the substrate. The applying of the priming material may include rotating the substrate to disperse the priming material radially on the substrate. In the embodiment, the priming material includes a solvent with at least six carbon atoms per molecule. A film-forming material is applied to the substrate on the priming material, and the application includes rotating the substrate to disperse the film-forming material radially on the substrate. The priming material and the film-forming material are evaporated to leave a component of the film-forming material in a solid form. In various embodiments, the priming material is selected based on at least one of an evaporation rate, a viscosity, or an intermolecular force between the priming material and the film-forming material.
公开/授权文献
- US20170002208A1 Priming Material for Substrate Coating 公开/授权日:2017-01-05
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