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公开(公告)号：US11581217B2
公开(公告)日：2023-02-14
申请号：US17346756
申请日：2021-06-14
Inventor： Tzu-Yang Lin , Cheng-Han Wu , Ching-Yu Chang , Chin-Hsiang Lin
IPC: H01L21/00 , H01L21/768 , H01L21/033 , H01L21/027
Abstract: A method for forming openings in an underlayer includes: forming a photoresist layer on an underlayer formed on a substrate; exposing the photoresist layer; forming photoresist patterns by developing the exposed photoresist layer, the photoresist patterns covering regions of the underlayer in which the openings are to be formed; forming a liquid layer over the photoresist patterns; after forming the liquid layer, performing a baking process so as to convert the liquid layer to an organic layer in a solid form; performing an etching back process to remove a portion of the organic layer on a level above the photoresist patterns; removing the photoresist patterns, so as to expose portions of the underlayer by the remaining portion of the organic layer; forming the openings in the underlayer by using the remaining portion of the organic layer as an etching mask; and removing the remaining portion of the organic layer.
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公开(公告)号：US11966162B2
公开(公告)日：2024-04-23
申请号：US18200510
申请日：2023-05-22
Inventor： Tzu-Yang Lin , Ching-Yu Chang , Chin-Hsiang Lin
IPC: G03F7/039 , G03F7/004 , G03F7/038 , G03F7/20 , G03F7/30 , G03F7/32 , G03F7/36 , G03F7/38 , G03F7/40 , B82Y30/00 , B82Y40/00
CPC classification number: G03F7/0397 , G03F7/0042 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/2004 , G03F7/30 , G03F7/32 , G03F7/36 , G03F7/38 , G03F7/40 , B82Y30/00 , B82Y40/00
Abstract: A photoresist composition includes a photoactive compound and a polymer. The polymer has a polymer backbone including one or more groups selected from:
The polymer backbone includes at least one group selected from B, C-1, or C-2, wherein ALG is an acid labile group, and X is a linking group.
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