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    Resorbable hollow devices for implantation and delivery of therapeutic agents
    1.
    发明申请
    Resorbable hollow devices for implantation and delivery of therapeutic agents 审中-公开
    用于植入和递送治疗剂的可再吸收中空装置

    公开(公告)号：US20060182780A1

    公开(公告)日：2006-08-17

    申请号：US11357837

    申请日：2006-02-16

    申请人： Susan Riley ,  Alexander Vaccaro ,  Joseph Tai

    发明人： Susan Riley ,  Alexander Vaccaro ,  Joseph Tai

    IPC分类号： A61M29/00 ,  A61F2/00

    CPC分类号： A61B17/7097 ,  A61B17/8833 ,  A61B17/8855 ,  A61B2017/00004 ,  A61B2017/8813 ,  A61B2017/883 ,  A61F2/44 ,  A61F2/4601 ,  A61F2002/30062 ,  A61F2002/30064 ,  A61M25/10 ,  A61M25/1029 ,  A61M31/002 ,  A61M2025/0057 ,  A61M2025/105

    摘要： A method of manufacturing a resorbable balloon designed to contain bone cement for vertebroplasty or kyphoplasty applications is described. The resorbable balloon can be inserted into a vertebral body following vertebral cavitation and filled with bone cement. The balloon remains in place in the vertebral body and resorbs over time. Methods and apparatus are also described for delivering therapeutic agents using collapsible, resorbable balloons. The balloons may be nested and filled with various therapeutic agents that are released over time at rates dependent upon structures and degradation rates of the balloons. Furthermore, the function of the hollow devices can encompass both encapsulation and therapeutic substance delivery roles simultaneously.

    摘要翻译： 描述了一种制造可再吸收球囊的方法，该球囊被设计用于容纳用于椎体成形术或椎体后凸成形术的骨粘固剂。 可再吸收的球囊可以在椎体空洞后插入椎体中并填充骨水泥。 气球保持在椎体内的位置，随着时间的推移再次吸收。 还描述了使用可折叠，可再吸收气囊输送治疗剂的方法和装置。 气球可以嵌套并填充随着时间的流逝释放的各种治疗剂，其取决于气囊的结构和降解速率。 此外，中空装置的功能可以同时包含包封和治疗物质递送作用。

    Methods for making and using composites, polymer scaffolds, and composite scaffolds
    2.
    发明申请
    Methods for making and using composites, polymer scaffolds, and composite scaffolds 审中-公开
    制备和使用复合材料，聚合物支架和复合支架的方法

    公开(公告)号：US20070187857A1

    公开(公告)日：2007-08-16

    申请号：US11229028

    申请日：2005-09-15

    申请人： Susan Riley ,  Joseph Tai ,  Rhiannon Dabkowski ,  Rodney Moser ,  Marc Hedrick ,  Timothy Moseley

    发明人： Susan Riley ,  Joseph Tai ,  Rhiannon Dabkowski ,  Rodney Moser ,  Marc Hedrick ,  Timothy Moseley

    IPC分类号： B29C65/00

    CPC分类号： A61L27/446 ,  A61L27/38 ,  A61L27/44 ,  A61L27/46 ,  B29C70/64 ,  B29L2031/753

    摘要： The present invention relates to methods of making and using composites and scaffolds as implantable devices useful for tissue repair, guided tissue regeneration, and tissue engineering. In particular, the present invention relates to methods of making and using compression molded resorbable thermoplastic polymer composites which can be subsequently processed with non-organic solvents to create porous, resorbable thermoplastic polymer scaffolds or composite scaffold with interconnected porosity. Furthermore, these composites or scaffolds can be coated with an organic and/or inorganic material.

    摘要翻译： 本发明涉及制备和使用复合材料和支架作为可用于组织修复，引导组织再生和组织工程的可植入装置的方法。 特别地，本发明涉及制造和使用压塑可再吸收热塑性聚合物复合材料的方法，其可以随后用非有机溶剂加工以产生具有相互连接的多孔性的多孔，可再吸收的热塑性聚合物支架或复合支架。 此外，这些复合材料或支架可以用有机和/或无机材料涂覆。

    Method of forming substrate vias in a GaAs wafer
    6.
    发明授权
    Method of forming substrate vias in a GaAs wafer 失效
    在GaAs晶片中形成衬底通孔的方法

    公开(公告)号：US5292686A

    公开(公告)日：1994-03-08

    申请号：US810740

    申请日：1991-12-18

    申请人： Susan Riley ,  Terri L. Clayton

    发明人： Susan Riley ,  Terri L. Clayton

    IPC分类号： H01L21/74 ,  H01L21/26

    CPC分类号： H01L21/76898 ,  H01L21/746 ,  Y10S438/94 ,  Y10S438/975 ,  Y10S438/977

    摘要： A method of forming substrate vias in a GaAs wafer begins with a GaAs wafer in which all top side processing steps are complete. The top surface of the GaAs wafer includes top surface via contacts, which are in electrical contact with the bottom surface ground plane once the ground vias are complete. A protective layer is formed on the top surface of the wafer to protect the finished integrated circuitry. A portion of the substrate is removed from the bottom surface to achieve a thin layer of substrate material. The bottom surface of the thinned substrate is metalized with a first metal layer. Laser via holes are drilled into the thinned substrate from the bottom surface of the wafer to within a few microns from the top surface metal via contacts. The laser holes are drilled by emitting a controlled number of single pulses over the selected via location. The substrate vias are subsequently wet etched to remove the remaining substrate thickness and the bottom surface of the wafer and the substrate via holes are metalized with a second metal layer. The second metal layer fills the via holes and establishes electrical contact between the top surface via contacts and the bottom surface ground plane. In a final step, the protective layer is removed from the top surface of the wafer.

    摘要翻译： 在GaAs晶片中形成衬底通孔的方法从其中所有顶侧处理步骤完成的GaAs晶片开始。 GaAs晶片的顶表面包括顶表面通孔触点，一旦接地孔完成，它们与底表面接地平面电接触。 在晶片的顶表面上形成保护层以保护成品集成电路。 衬底的一部分从底表面去除以获得薄的衬底材料层。 薄化基板的底表面用第一金属层金属化。 将激光通孔从晶片的底表面钻到减薄的基板中，通过触点从顶表面金属到几微米。 通过在所选择的通孔位置上发射受控数量的单个脉冲来钻出激光孔。 随后湿法蚀刻衬底通孔以去除剩余的衬底厚度，并且晶片的底表面和衬底通孔用第二金属层金属化。 第二金属层填充通孔，并通过触点和底表面接地层在顶表面之间建立电接触。 在最后的步骤中，从晶片的顶表面去除保护层。