公开(公告)号：US09306141B2

公开(公告)日：2016-04-05

申请号：US14788213

申请日：2015-06-30

申请人： Kabushiki Kaisha Toshiba

发明人： Hiroshi Hamasaki ,  Akihiro Kojima ,  Yoshiaki Sugizaki

IPC分类号： H01L21/00 ,  H01L33/62 ,  H01L33/00 ,  H01L33/36 ,  H01L33/38 ,  H01L33/56

CPC分类号： H01L33/62 ,  H01L33/0008 ,  H01L33/0016 ,  H01L33/0095 ,  H01L33/36 ,  H01L33/387 ,  H01L33/56 ,  H01L2933/0016 ,  H01L2933/005 ,  H01L2933/0066 ,  Y10S438/94

摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer including a first surface, a second surface opposite to the first surface, and a light emitting layer; a p-side electrode provided on the second surface of the semiconductor layer in a region including the light emitting layer; an n-side electrode provided on the second surface of the semiconductor layer in a region not including the light emitting layer; an insulating film being more flexible than the semiconductor layer, the insulating film provided on the second surface and a side surface of the semiconductor layer, and the insulating film having a first opening reaching the p-side electrode and a second opening reaching the n-side electrode; a p-side interconnection layer provided on the insulating film and connected to the p-side electrode; and an n-side interconnection layer provided on the insulating film and connected to the n-side electrode.

公开(公告)号：US20160005608A1

公开(公告)日：2016-01-07

申请号：US14836609

申请日：2015-08-26

申请人： President & Fellows Of Harvard College

发明人： Eric Mazur ,  Mengyan Shen

IPC分类号： H01L21/268 ,  H01L21/225 ,  H01L21/02 ,  H01L21/302

CPC分类号： H01L21/268 ,  B23K26/1224 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0259 ,  H01L21/02686 ,  H01L21/2252 ,  H01L21/302 ,  H01L21/67075 ,  Y10S438/94

摘要： The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

摘要翻译： 本发明通常提供具有通过用超短激光脉冲照射表面而产生的亚微米尺寸表面特征的半导体衬底。 一方面，公开了一种处理半导体衬底的方法，其包括将衬底的至少一部分表面与流体接触，并将该表面部分暴露于一个或多个飞秒脉冲，以便修改 那部分。 该修改可以包括例如在表面的上层中生成多个亚微米尺寸的尖峰。

公开(公告)号：US08852976B2

公开(公告)日：2014-10-07

申请号：US14081688

申请日：2013-11-15

申请人： Kabushiki Kaisha Toshiba

发明人： Hiroshi Hamasaki ,  Akihiro Kojima ,  Yoshiaki Sugizaki

IPC分类号： H01L21/00 ,  H01L33/00 ,  H01L33/38 ,  H01L33/36

CPC分类号： H01L33/62 ,  H01L33/0008 ,  H01L33/0016 ,  H01L33/0095 ,  H01L33/36 ,  H01L33/387 ,  H01L33/56 ,  H01L2933/0016 ,  H01L2933/005 ,  H01L2933/0066 ,  Y10S438/94

摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer including a first surface, a second surface opposite to the first surface, and a light emitting layer; a p-side electrode provided on the second surface of the semiconductor layer in a region including the light emitting layer; an n-side electrode provided on the second surface of the semiconductor layer in a region not including the light emitting layer; an insulating film being more flexible than the semiconductor layer, the insulating film provided on the second surface and a side surface of the semiconductor layer, and the insulating film having a first opening reaching the p-side electrode and a second opening reaching the n-side electrode; a p-side interconnection layer provided on the insulating film and connected to the p-side electrode; and an n-side interconnection layer provided on the insulating film and connected to the n-side electrode.

摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，包括第一表面，与第一表面相对的第二表面和发光层; p侧电极，设置在包括发光层的区域中的半导体层的第二表面上; 在不包括发光层的区域中设置在半导体层的第二表面上的n侧电极; 绝缘膜比半导体层更柔性，设置在第二表面上的绝缘膜和半导体层的侧表面，绝缘膜具有到达p侧电极的第一开口和到达p侧电极的第二开口， 侧电极; p侧互连层，设置在绝缘膜上并连接到p侧电极; 以及设置在绝缘膜上并连接到n侧电极的n侧互连层。

公开(公告)号：US08598051B2

公开(公告)日：2013-12-03

申请号：US13021409

申请日：2011-02-04

申请人： Eric Mazur ,  Mengyan Shen

发明人： Eric Mazur ,  Mengyan Shen

IPC分类号： H01L21/268 ,  G21K5/10

CPC分类号： H01L21/268 ,  B23K26/1224 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0259 ,  H01L21/02686 ,  H01L21/2252 ,  H01L21/302 ,  H01L21/67075 ,  Y10S438/94

摘要： The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

摘要翻译： 本发明通常提供具有通过用超短激光脉冲照射表面而产生的亚微米尺寸表面特征的半导体衬底。 一方面，公开了一种处理半导体衬底的方法，其包括将衬底的至少一部分表面与流体接触，并将该表面部分暴露于一个或多个飞秒脉冲，以便修改 那部分。 该修改可以包括例如在表面的上层中生成多个亚微米尺寸的尖峰。

公开(公告)号：US08202811B2

公开(公告)日：2012-06-19

申请号：US12878461

申请日：2010-09-09

申请人： Koichiro Tanaka ,  Shunpei Yamazaki

发明人： Koichiro Tanaka ,  Shunpei Yamazaki

IPC分类号： H01L21/428 ,  B23K26/06

CPC分类号： B23K26/0738 ,  B23K26/066 ,  B23K26/0732 ,  H01L27/1214 ,  H01L27/1288 ,  Y10S438/94

摘要： To provide a manufacturing apparatus of a semiconductor device, which does not use a stepper in a manufacturing process in the case where mass production of semiconductor devices is carried out by using a large-sized substrate. A thin film formed over a substrate having an insulating surface is selectively irradiated with a laser beam through light control means, specifically through an electro-optical device to cause ablation; accordingly, the thin film is partially removed, thereby processing the thin film in a remaining region into a desired shape. The electro-optical device functions as a variable mask by inputting an electrical signal based on design CAD data of the semiconductor device.

摘要翻译： 为了提供在通过使用大尺寸基板进行半导体器件的批量生产的情况下在制造工艺中不使用步进器的半导体器件的制造装置。 通过光控制装置，特别是通过电光装置选择性地用激光束照射形成在具有绝缘表面的基板上的薄膜以引起烧蚀; 因此，薄膜被部分去除，从而将剩余区域中的薄膜处理成期望的形状。 电光装置通过基于半导体器件的设计CAD数据输入电信号而用作可变掩模。

公开(公告)号：US07998840B2

公开(公告)日：2011-08-16

申请号：US12468317

申请日：2009-05-19

申请人： Yosuke Watanabe

发明人： Yosuke Watanabe

IPC分类号： H01L21/00

CPC分类号： B23K26/046 ,  B23K2101/40 ,  Y10S438/94

摘要： A wafer laser processing method for forming deteriorated layers in the inside of a wafer having a device area and a peripheral excess area surrounding the device area, the surface of the device area being higher than the surface of the peripheral excess area, involving a first step for forming a deteriorated layer in the insides of the peripheral excess area and device area by applying a laser beam to the peripheral excess area and the device area with its focal point set in the material of the peripheral excess area and the device area from the front surface side of the wafer; and a second step for forming a deteriorated layer in the inside of the device area by applying a laser beam to the device area with its focal point set in the material of the device area without applying the laser beam to the peripheral excess area.

摘要翻译： 一种晶片激光加工方法，用于在具有围绕所述器件区域的器件面积和周边多余区域的晶片内部形成劣化层，所述器件区域的表面高于所述外围多余区域的表面，所述晶片激光加工方法涉及第一步骤 用于通过将激光束施加到周边多余区域和设备区域，在其周边多余区域的材料中设置焦点并将前端的设备区域设置在周边多余区域和设备区域的内部，形成劣化层 晶片的表面侧; 以及第二步骤，通过将激光束设置在设备区域的材料中，而不将激光束施加到外围多余区域，在设备区域的内部形成劣化层。

公开(公告)号：US07977212B2

公开(公告)日：2011-07-12

申请号：US12381763

申请日：2009-03-16

申请人： Walter Psyk ,  Peter Lechner

发明人： Walter Psyk ,  Peter Lechner

IPC分类号： H01L21/00

CPC分类号： H01L31/046 ,  B23K26/36 ,  H01L31/0463 ,  H01L31/048 ,  H01L31/186 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S438/94

摘要： For manufacturing a photovoltaic module (1) having on a transparent substrate (2) a transparent front electrode layer (3), a semiconductor layer (4) and a back electrode layer (5) as functional layers, the functional layers (3-5) are removed in the edge area (10) of the substrate (2) with a laser emitting infrared radiation. Subsequently, a back cover (12) is laminated on the coated substrate (2) with an adhesive film (11).

摘要翻译： 为了制造在透明基板（2）上具有作为功能层的透明前电极层（3），半导体层（4）和背面电极层（5）的光伏模块（1），功能层（3-5 ）在激光发射红外辐射的情况下在衬底（2）的边缘区域（10）中去除。 随后，利用粘合膜（11）将后盖（12）层压在涂覆的基板（2）上。

公开(公告)号：US07887712B2

公开(公告)日：2011-02-15

申请号：US10102702

申请日：2002-03-22

申请人： Adrian Boyle ,  Oonagh Meighan ,  Gillian Walsh ,  Kia Woon Mah

发明人： Adrian Boyle ,  Oonagh Meighan ,  Gillian Walsh ,  Kia Woon Mah

IPC分类号： H01L21/302 ,  B23K26/00

CPC分类号： B23K26/073 ,  B23K26/0622 ,  B23K26/12 ,  B23K26/123 ,  B23K26/125 ,  B23K26/127 ,  B23K26/142 ,  B23K26/1462 ,  B23K26/16 ,  B23K26/384 ,  B23K26/389 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/12 ,  B23K2103/172 ,  H05K3/0026 ,  Y10S438/94

摘要： A substrate (16) is machined to form, for example, a via. The substrate is in a chamber (15) within which the gaseous environment is controlled. The machining laser beam (13) is delivered with control of parameters such as pulsing parameters to achieve desired effects. The gaseous environment may be controlled to control integral development of an insulating lining for a via, thereby avoiding the need for downstream etching and oxide growth steps. Also, machining may be performed in multiple passes in order to minimize thermal damage and to achieve other desired effects such as a particular via geometry.

摘要翻译： 加工基板（16）以形成例如通孔。 衬底位于室（15）内，气体环境被控制在其中。 加工激光束（13）通过诸如脉冲参数的参数的控制来传送以实现期望的效果。 可以控制气体环境以控制用于通孔的绝缘衬层的整体显影，从而避免对下游蚀刻和氧化物生长步骤的需要。 此外，可以在多次通过中进行加工以便最小化热损伤并实现其它期望的效果，例如特定通孔几何形状。

公开(公告)号：US07696013B2

公开(公告)日：2010-04-13

申请号：US11737187

申请日：2007-04-19

申请人： M. Zaki Ali ,  A. Peter Stolt ,  Gilbert A. Hawkins ,  Thomas M. Stephany

发明人： M. Zaki Ali ,  A. Peter Stolt ,  Gilbert A. Hawkins ,  Thomas M. Stephany

IPC分类号： H01L21/00

CPC分类号： H01L23/48 ,  B81B2207/098 ,  B81C1/00301 ,  H01L21/4864 ,  H01L24/24 ,  H01L24/32 ,  H01L24/82 ,  H01L24/83 ,  H01L2224/1131 ,  H01L2224/24226 ,  H01L2224/244 ,  H01L2224/24992 ,  H01L2224/27013 ,  H01L2224/73217 ,  H01L2224/82039 ,  H01L2224/82102 ,  H01L2224/83051 ,  H01L2224/838 ,  H01L2224/92144 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/0781 ,  H01L2924/12041 ,  H01L2924/1306 ,  H05K3/0032 ,  H05K3/107 ,  H05K3/125 ,  H05K3/1258 ,  H05K3/321 ,  H05K2201/09472 ,  H05K2201/10674 ,  H05K2203/013 ,  H05K2203/0568 ,  H05K2203/1469 ,  Y10S438/94 ,  H01L2924/00 ,  H01L2224/0401

摘要： A method of providing connectivity to a microsized device, the method includes the steps of providing an ablative base material having at least a top surface; providing a die having a first and second surface and having bonding pads at least upon the first surface; placing the die with the at least first surface of the die contacting the at least first surface of the ablative base material; and ablating a channel in the ablative material proximate to the die.

摘要翻译： 提供与微型化装置的连通性的方法，该方法包括以下步骤：提供具有至少顶表面的烧蚀性基材; 提供具有第一和第二表面的模具，并且至少在所述第一表面上具有焊盘; 使所述模具与所述模具的所述至少第一表面接触所述可烧蚀基材的所述至少第一表面; 并且在靠近模具的烧蚀材料中烧蚀通道。

公开(公告)号：US20090246904A1

公开(公告)日：2009-10-01

申请号：US12381763

申请日：2009-03-16

申请人： Walter Psyk ,  Peter Lechner

发明人： Walter Psyk ,  Peter Lechner

IPC分类号： H01L21/268 ,  H01L31/18

CPC分类号： H01L31/046 ,  B23K26/36 ,  H01L31/0463 ,  H01L31/048 ,  H01L31/186 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S438/94

摘要： For manufacturing a photovoltaic module (1) having on a transparent substrate (2) a transparent front electrode layer (3), a semiconductor layer (4) and a back electrode layer (5) as functional layers, the functional layers (3-5) are removed in the edge area (10) of the substrate (2) with a laser emitting infrared radiation. Subsequently, a back cover (12) is laminated on the coated substrate (2) with an adhesive film (11).

摘要翻译： 为了制造在透明基板（2）上具有作为功能层的透明前电极层（3），半导体层（4）和背面电极层（5）的光伏模块（1），功能层（3-5 ）在激光发射红外辐射的情况下在衬底（2）的边缘区域（10）中去除。 随后，利用粘合膜（11）将后盖（12）层压在涂覆的基板（2）上。