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公开(公告)号：US10577707B2
公开(公告)日：2020-03-03
申请号：US14682945
申请日：2015-04-09
摘要： Method and apparatus for the electrodeposition of a contact metal layer on contact areas of semiconductor components in a wafer assemblage. The method comprises: a) providing a wafer having components having at least one pn junction; b) arranging a non-conductive homogenizing device with respect to the first surfaces of the components, and an electrical contact device at a second surface of the wafer; c) introducing the wafer into an electroplating bath having an electrode, wherein the surface thereof consists at least partly of a first contact metal, and wherein the first surface of the components is in contact with the electroplating bath; d) applying a voltage to the electrode and to the contact device, as a result of which current flows between the electrode and the contact device, through the electroplating bath and the component and contact metal is thus deposited at the first contact areas of the components.
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公开(公告)号：US20180233602A1
公开(公告)日：2018-08-16
申请号：US15866948
申请日：2018-01-10
IPC分类号： H01L29/872 , H01L29/06
CPC分类号： H01L29/872 , H01L29/0649 , H01L29/0657 , H01L29/8611 , H01L2224/40225
摘要： A semiconductor diode includes a semiconductor body, having a first main area formed from an inner area, on which a first contact layer is arranged, and from an edge area, a current path from the first contact layer to a second contact layer arranged on a second main area situated opposite the first main area, wherein the semiconductor diode, by virtue of the configuration of the first contact layer or of the semiconductor body, is formed such that upon current flow, such current flows through a current path having the greatest heating per unit volume, and which proceeds from a further partial area of the inner area, wherein the further partial area is arranged on the other side of a boundary of an inner partial area of the inner area, said inner partial area preferably being arranged centrally, with respect to an outer partial area adjoining said inner partial area.
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公开(公告)号：US11664335B2
公开(公告)日：2023-05-30
申请号：US15358038
申请日：2016-11-21
IPC分类号： H01L23/00 , H01L23/488
CPC分类号： H01L24/05 , H01L23/488 , H01L24/03 , H01L24/08 , H01L24/48 , H01L24/85 , H01L24/45 , H01L2224/0345 , H01L2224/0347 , H01L2224/03462 , H01L2224/03823 , H01L2224/04042 , H01L2224/05005 , H01L2224/0508 , H01L2224/0516 , H01L2224/05023 , H01L2224/0558 , H01L2224/0566 , H01L2224/05118 , H01L2224/05124 , H01L2224/05139 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05171 , H01L2224/05172 , H01L2224/05179 , H01L2224/05184 , H01L2224/05186 , H01L2224/05583 , H01L2224/05618 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05664 , H01L2224/05666 , H01L2224/05671 , H01L2224/05672 , H01L2224/05679 , H01L2224/05684 , H01L2224/08503 , H01L2224/45005 , H01L2224/45015 , H01L2224/4554 , H01L2224/45147 , H01L2224/4847 , H01L2224/48247 , H01L2224/48506 , H01L2224/48507 , H01L2224/48855 , H01L2224/85205 , H01L2224/85375 , H01L2924/00014 , H01L2224/45147 , H01L2924/00014 , H01L2224/45015 , H01L2924/2076 , H01L2224/05171 , H01L2924/00014 , H01L2224/05179 , H01L2924/00014 , H01L2224/05172 , H01L2924/00014 , H01L2224/05147 , H01L2924/00014 , H01L2224/05139 , H01L2924/00014 , H01L2224/05164 , H01L2924/00014 , H01L2224/0516 , H01L2924/00014 , H01L2224/05118 , H01L2924/00014 , H01L2224/05155 , H01L2924/00014 , H01L2224/05664 , H01L2924/00014 , H01L2224/05166 , H01L2924/00014 , H01L2224/05184 , H01L2924/00014 , H01L2224/05186 , H01L2924/01074 , H01L2224/05186 , H01L2924/01022 , H01L2224/45005 , H01L2924/2076 , H01L2224/45147 , H01L2924/013 , H01L2924/00014 , H01L2924/00014 , H01L2224/43848 , H01L2224/05644 , H01L2924/00014 , H01L2224/85205 , H01L2924/00014 , H01L2224/05124 , H01L2924/013 , H01L2924/01014
摘要： A power semiconductor chip having: a semiconductor component body; a multilayer metallization arranged on the semiconductor component body; and a nickel layer arranged over the semiconductor component body. The invention further relates to a method for producing a power semiconductor chip and to a power semiconductor device. The invention provides a power semiconductor chip which has a metallization to which a copper wire, provided without a thick metallic coating, can be reliably bonded without damage to the power semiconductor chip during bonding.
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公开(公告)号：US10312380B2
公开(公告)日：2019-06-04
申请号：US15866948
申请日：2018-01-10
IPC分类号： H01L29/82 , H01L29/872 , H01L29/06 , H01L29/861
摘要： A semiconductor diode includes a semiconductor body, having a first main area formed from an inner area, on which a first contact layer is arranged, and from an edge area, a current path from the first contact layer to a second contact layer arranged on a second main area situated opposite the first main area, wherein the semiconductor diode, by virtue of the configuration of the first contact layer or of the semiconductor body, is formed such that upon current flow, such current flows through a current path having the greatest heating per unit volume, and which proceeds from a further partial area of the inner area, wherein the further partial area is arranged on the other side of a boundary of an inner partial area of the inner area, said inner partial area preferably being arranged centrally, with respect to an outer partial area adjoining said inner partial area.
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