- 专利标题: Power semiconductor chip, method for producing a power semiconductor chip, and power semiconductor device
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申请号: US15358038申请日: 2016-11-21
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公开(公告)号: US11664335B2公开(公告)日: 2023-05-30
- 发明人: Wolfgang-Michael Schulz
- 申请人: Semikron Elektronik GmbH & Co., KG
- 申请人地址: DE Nuremberg
- 专利权人: Semikron Elektronik GmbH & Co., KG
- 当前专利权人: Semikron Elektronik GmbH & Co., KG
- 当前专利权人地址: DE N ürnberg
- 代理机构: The Law Offices of Roger S. Thompson
- 优先权: DE 2015120161.5 2015.11.20 DE 2016117389.4 2016.09.15
- 主分类号: H01L23/00
- IPC分类号: H01L23/00 ; H01L23/488
摘要:
A power semiconductor chip having: a semiconductor component body; a multilayer metallization arranged on the semiconductor component body; and a nickel layer arranged over the semiconductor component body. The invention further relates to a method for producing a power semiconductor chip and to a power semiconductor device. The invention provides a power semiconductor chip which has a metallization to which a copper wire, provided without a thick metallic coating, can be reliably bonded without damage to the power semiconductor chip during bonding.
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