公开(公告)号：US12015012B2

公开(公告)日：2024-06-18

申请号：US17613605

申请日：2020-05-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya Onuki ,  Takanori Matsuzaki ,  Yuki Okamoto ,  Shunpei Yamazaki

IPC: H01L27/108 ,  G11C5/06 ,  H01L25/065 ,  H01L29/786 ,  H10B12/00 ,  H01L23/00

CPC classification number: H01L25/0657 ,  G11C5/063 ,  H01L29/78693 ,  H10B12/315 ,  H10B12/50 ,  H01L24/16 ,  H01L25/0655 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/1431 ,  H01L2924/1436

Abstract: A semiconductor device with a novel structure is provided. The semiconductor device includes a silicon substrate including a first circuit, a first element layer including a second circuit, and a second element layer including a third circuit. The first circuit includes a first transistor. The second circuit includes a second transistor. The third circuit includes a memory cell. The memory cell includes a third transistor and a capacitor. The first element layer and the second element layer constitute a stacked block stacked and provided in a direction perpendicular or substantially perpendicular to a surface of the silicon substrate. A plurality of stacked blocks are stacked and provided in the direction perpendicular or substantially perpendicular to the surface of the silicon substrate. Each of the plurality of stacked blocks includes a first wiring provided in the direction perpendicular or substantially perpendicular to the surface of the silicon substrate. The plurality of stacked blocks are electrically connected to each other through the wiring.

公开(公告)号：US11867503B2

公开(公告)日：2024-01-09

申请号：US17263170

申请日：2019-07-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takayuki Ikeda ,  Ryota Tajima ,  Yuki Okamoto ,  Shunpei Yamazaki

IPC: G01B7/00 ,  G01B7/16 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  H03K5/24 ,  H03K21/08 ,  H01M10/48 ,  H10B99/00

CPC classification number: G01B7/18 ,  H01L27/124 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/42384 ,  H01L29/7869 ,  H01M10/48 ,  H03K5/24 ,  H03K21/08 ,  H10B99/00

Abstract: An anomaly detection system that outputs an anomaly detection signal before a safety valve of a secondary battery is opened is provided. The anomaly detection system includes a strain sensor, a memory, and a comparator. The memory has a function of retaining an analog potential, and the comparator has a function of comparing a potential output by the strain sensor and the analog potential retained by the memory. The strain sensor is attached to the secondary battery before use, and a predetermined potential is retained in the memory. When a housing of the secondary battery expands while the secondary battery is used, and the potential output by the strain sensor becomes higher (or lower) than the predetermined potential, an anomaly detection signal is output.

公开(公告)号：US11362647B2

公开(公告)日：2022-06-14

申请号：US17312420

申请日：2019-12-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuki Okamoto ,  Kei Takahashi

IPC: H03K5/08 ,  H03K3/0233 ,  H01M10/48 ,  H02J7/02 ,  H03K17/22 ,  H03K19/0185 ,  G06G7/186 ,  H03K19/20

Abstract: To provide a hysteresis comparator having a small circuit area and low power consumption. The hysteresis comparator includes a comparator, a switch, a first capacitor, a second capacitor, and a logic circuit. A first terminal of the switch is electrically connected to one of a pair of conductive regions of the first capacitor, one of a pair of conductive regions of the second capacitor, and a first input terminal of the comparator. An output terminal of the comparator is electrically connected to an input terminal of the logic circuit. An output terminal of the logic circuit is electrically connected to the other of the pair of conductive regions of the second capacitor. The logic circuit has a function of generating an inverted signal of a signal input to the input terminal of the logic circuit and outputting the inverted signal to the output terminal of the logic circuit. A reference potential is input to the first input terminal of the comparator and the reference potential is held by the switch. Due to change in the potential of the output terminal of the comparator, the reference potential is changed by capacitive coupling of the second capacitor.

公开(公告)号：US11204657B2

公开(公告)日：2021-12-21

申请号：US15685792

申请日：2017-08-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takayuki Ikeda ,  Yuki Okamoto ,  Kei Takahashi ,  Shunpei Yamazaki

IPC: G06F3/041 ,  G06F1/3234 ,  G06F3/0488 ,  G06F1/3203 ,  G02F1/1333

Abstract: A display device with excellent visibility can be provided. The display device includes a display region displayed by a light-emitting element. In the display region, a point touched by a user is a first point, a point which has been touched by the user prior to the first point is a second point, a vector that starts at the first point and ends at the second point is a first vector, a vector obtained by multiplying the first vector by k (k is a real number) is a second vector, and a point that is the second vector away from the first point is a third point, the display region includes a first region and a second region obtained by excluding the first region from the display region, The first region includes a first circle and a second circle, the center of the first circle is the first point, and the center of the second circle is the third point. The luminance in the first region is higher than the luminance in the second region.

公开(公告)号：US20210280152A1

公开(公告)日：2021-09-09

申请号：US17186268

申请日：2021-02-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuki Okamoto

IPC: G09G5/10 ,  G09G3/36 ,  H01L27/32 ,  G02F1/1335 ,  G02F1/1368 ,  G09G3/3233 ,  H01L51/00

Abstract: An information terminal capable of automatically adjusting the brightness of a display portion in accordance with bending of the display portion is provided. The information terminal includes a display portion that includes a first pixel, a second pixel, and a sensor element. The first pixel includes a liquid crystal element. The second pixel includes a light-emitting element. The sensor element includes a first bend sensor whose resistance is changed in accordance with bending of the display portion in a convex direction and a second bend sensor whose resistance is changed in accordance with bending of the display portion in a concave direction. The luminance of the light-emitting element is controlled in accordance with an output of the sensor element.

公开(公告)号：US10482833B2

公开(公告)日：2019-11-19

申请号：US15805589

申请日：2017-11-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuki Okamoto

IPC: G09G3/36 ,  G09G3/32 ,  G09G3/30 ,  G09G3/20

Abstract: An operation method of a display device with high visibility is to be provided. The display device is an electronic device including a first display element, a second display element, an optical sensor, and a gain calculation circuit. In the electronic device, the illuminance of external light is obtained with the optical sensor, and depending on the illuminance, images displayed using the first display element and the second display element are corrected. The gain calculation circuit obtains the illuminance and calculates a gain value depending on the illuminance. In particular, the gain value is calculated for each of the first display element and the second display element. Furthermore, the gain calculation circuit performs dimming and toning on image data displayed using the first display element and the second display element by multiplying the image data by the gain values or values corresponding to the gain values.

公开(公告)号：US10380956B2

公开(公告)日：2019-08-13

申请号：US15627497

申请日：2017-06-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yuki Okamoto

IPC: H01L29/78 ,  H01L27/12 ,  G09G3/36 ,  G09G3/3233 ,  H01L27/32 ,  H01L29/786

Abstract: An information terminal capable of switching display and non-display of images by strain. The information terminal includes a display portion and a strain sensor. The display portion includes a liquid crystal element, a light-emitting element, and a first and a second transistors. The strain sensor includes a strain sensor element and a resistor. The first transistor has a function of controlling current flowing into the light-emitting element. The strain sensor element has a function as a variable resistor. A first terminal of the strain sensor element is electrically connected to a first terminal of the resistor. A gate of the first transistor is electrically connected to a first terminal of the strain sensor element via the second transistor.

公开(公告)号：US10305460B2

公开(公告)日：2019-05-28

申请号：US15432002

申请日：2017-02-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuki Okamoto ,  Yoshiyuki Kurokawa

IPC: H03K5/22 ,  H03K5/24 ,  G11C11/401 ,  G11C15/04 ,  H03M1/66

Abstract: A semiconductor device that enables a memory size reduction is provided. The semiconductor device includes a converter circuit, a memory circuit, and a detection circuit. The converter circuit has a function of converting first data that includes a digital voltage value to second data that includes an analog current value. The memory circuit has a function of storing third data that includes an analog current value. The detection circuit has a function of generating data that indicates whether the analog current values of the second and third data match.

公开(公告)号：US20180233089A1

公开(公告)日：2018-08-16

申请号：US15885078

申请日：2018-01-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuki Okamoto

IPC: G09G3/3258 ,  G09G3/3233 ,  G09G3/36 ,  G09G3/20 ,  G06F3/041 ,  H01L27/32 ,  G02F1/1362 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1368 ,  H01L21/02

CPC classification number: G09G3/3258 ,  G02F1/133553 ,  G02F1/13439 ,  G02F1/136286 ,  G02F1/1368 ,  G06F3/0412 ,  G06F3/0414 ,  G09G3/2003 ,  G09G3/2092 ,  G09G3/3225 ,  G09G3/3233 ,  G09G3/3648 ,  G09G2300/023 ,  G09G2300/0426 ,  G09G2300/0452 ,  G09G2300/046 ,  G09G2310/08 ,  G09G2320/0673 ,  G09G2330/021 ,  H01L21/02164 ,  H01L21/02266 ,  H01L27/1225 ,  H01L27/3232 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A display system includes a host device, a display controller, and a display panel. The display panel includes a pixel array including a plurality of subpixels each including a light-emitting display element and a reflective display element. The host device sends image data DT0 to the display controller. The display controller has the following functions: color classification of the image data DT0; generation of attribute data based on the classification result; generation of image data DT1 from the image data DT0; generation of two kinds of image data DT2_e and DT2_r through image processing of the image data DT1 in accordance with the attribute data; generation of image data DT3_e from the image data DT2_e; and generation of image data DT3_r from the image data DT2_r. The image data DT3_e is displayed by the light-emitting display element, and the image data DT3_r is displayed by the reflective display element.

公开(公告)号：US09876499B2

公开(公告)日：2018-01-23

申请号：US15279594

申请日：2016-09-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Munehiro Kozuma ,  Takayuki Ikeda ,  Yoshiyuki Kurokawa ,  Takeshi Aoki ,  Yuki Okamoto

IPC: H03K19/177 ,  H03K19/00 ,  H03K19/0948

CPC classification number: H03K19/0013 ,  H03K19/0948 ,  H03K19/17728 ,  H03K19/1776

Abstract: A semiconductor device suitable for low-voltage driving. The semiconductor device includes a first transistor, a second transistor, a power supply line, a circuit, and a memory circuit. The first transistor controls electrical continuity between the circuit and the power supply line. The memory circuit stores data for setting a gate potential of the first transistor. The second transistor controls electrical continuity between an output node of the memory circuit and a gate of the first transistor. The second transistor is a transistor with an ultralow off-state current, for example, an oxide semiconductor transistor. In a period for operating the circuit, a first potential is input to the power supply line and the second transistor is turned off. In a period for updating the gate potential of the first transistor, a second potential is input to the power supply line. The second potential is higher than the first potential.