Integrated circuit devices having buried word lines therein

    公开(公告)号:US11889681B2

    公开(公告)日:2024-01-30

    申请号:US17720664

    申请日:2022-04-14

    IPC分类号: H10B12/00

    摘要: An integrated circuit device includes a substrate having an active region and a word line trench therein. The word line trench includes a lower portion having a first width, and an upper portion, which extends between the lower portion and a surface of the substrate and has a second width that is greater than the first width. A word line is provided, which extends in and adjacent a bottom of the word line trench. A gate insulation layer is provided, which extends between the word line and sidewalls of the lower portion of the word line trench. An electrically insulating gate capping layer is provided in the upper portion of the word line trench. An insulation liner is provided, which extends between the gate capping layer and sidewalls of the upper portion of the word line trench. The gate insulation layer extends between the insulation liner and a portion of the gate capping layer, which extends within the upper portion of the word line trench.

    SEMICONDUCTOR DEVICES
    3.
    发明公开

    公开(公告)号:US20230309293A1

    公开(公告)日:2023-09-28

    申请号:US18327920

    申请日:2023-06-02

    IPC分类号: H10B12/00

    摘要: Semiconductor devices may include an active pattern, a gate structure in an upper portion of the active pattern, a bit line structure on the active pattern, a lower spacer structure on a lower portion of a sidewall of the bit line structure, and an upper spacer structure on an upper portion of the sidewall of the bit line structure. The lower spacer structure includes first and second lower spacers sequentially stacked, the first lower spacer contacts the lower portion of the sidewall of the bit line structure and does not include nitrogen, and the second lower spacer includes a material different from the first lower spacer. A portion of the upper spacer structure contacting the upper portion of the sidewall of the bit line structure includes a material different from the first lower spacer.

    Semiconductor memory devices having protruding contact portions

    公开(公告)号:US11723191B2

    公开(公告)日:2023-08-08

    申请号:US17192084

    申请日:2021-03-04

    IPC分类号: H10B12/00

    摘要: Disclosed are a semiconductor memory device and a method of fabricating the same. The device includes a substrate including an active pattern with doped regions, a gate electrode crossing the active pattern between the doped regions, a bit line crossing the active pattern and being electrically connected to one of the doped regions, a spacer on a side surface of the bit line, a first contact coupled to another of the doped regions and spaced apart from the bit line with the spacer interposed therebetween, a landing pad on the first contact, and a data storing element on the landing pad. The another of the doped regions has a top surface, an upper side surface, and a curved top surface that extends from the top surface to the upper side surface. The first contact is in contact with the curved top surface and the upper side surface.

    SEMICONDUCTOR AND MANUFACTURING METHOD OF THE SAME

    公开(公告)号:US20210066305A1

    公开(公告)日:2021-03-04

    申请号:US16896470

    申请日:2020-06-09

    IPC分类号: H01L27/108 H01L23/528

    摘要: A semiconductor device includes: an active region defined by a device isolation layer formed in a substrate; a word line configured to cross the active region, the word line extending in a first direction and being formed in the substrate; a bit line extending in a second direction perpendicular to the first direction on the word line; a first contact connecting the bit line to the active region; a first mask for forming the active region, the first mask being formed on the active region; and a second mask of which a height of a top surface thereof is greater than a height of a top surface of the active region, the second mask covering the word line, wherein the active region has a bar shape that extends to form an acute angle with respect to the first direction.