公开(公告)号：US10236185B2

公开(公告)日：2019-03-19

申请号：US15686578

申请日：2017-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yool Kang ,  Kyoung-sil Park ,  Yun-seok Choi ,  Boo-deuk Kim ,  Ye-hwan Kim

IPC: H01L21/308 ,  H01L21/033 ,  H01L21/762 ,  H01L21/027 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L27/108 ,  B05D1/00 ,  B05D3/02

Abstract: A method of forming patterns for a semiconductor device includes preparing a hardmask composition including a carbon allotrope, a spin-on hardmask (SOH) material, an aromatic ring-containing polymer, and a solvent, applying the hardmask composition to an etching target layer, forming a hardmask by heat-treating the applied hardmask composition, forming a photoresist pattern on the hardmask, forming a hardmask pattern by etching the hardmask using the photoresist pattern as an etching mask, and forming an etched pattern by etching the etching target layer using the hardmask pattern as an etching mask.

公开(公告)号：US08778598B2

公开(公告)日：2014-07-15

申请号：US13711999

申请日：2012-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yool Kang ,  Suk-joo Lee ,  Jung-hyeon Lee ,  Shi-yong Yi

IPC: G03F7/40

CPC classification number: H01L21/027 ,  G03F7/0035 ,  G03F7/40 ,  H01L21/0273 ,  H01L21/0338 ,  H01L21/32139

Abstract: A method of forming fine patterns of a semiconductor device according to a double patterning process that uses acid diffusion is provided. In this method, a plurality of first mask patterns are formed on a substrate. A capping film including an acid source is formed on the exposed surface areas of the plurality of first mask patterns. A second mask layer is formed on the capping films. A plurality of acid diffused regions are formed within the second mask layer by diffusing acid obtained from the acid source from the capping films into the second mask layer. A plurality of second mask patterns are formed of residual parts of the second mask layer which remain after removing the acid diffused regions of the second mask layer.

Abstract translation: 提供了根据使用酸扩散的双重图案化工艺形成半导体器件的精细图案的方法。 在该方法中，在基板上形成多个第一掩模图案。 在多个第一掩模图案的暴露的表面区域上形成包括酸源的封盖膜。 在封盖膜上形成第二掩模层。 通过将从酸源获得的酸从封盖膜扩散到第二掩模层中，在第二掩模层内形成多个酸扩散区。 多个第二掩模图案由除去第二掩模层的酸扩散区域之后残留的第二掩模层的残留部分形成。

公开(公告)号：US11189491B2

公开(公告)日：2021-11-30

申请号：US16733447

申请日：2020-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul-Ho Kim ,  Yool Kang ,  Jaesung Kang ,  Jinphil Choi

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/311 ,  H01L21/768

Abstract: A method of forming a mask pattern and a method of fabricating a semiconductor device, the method of forming a mask pattern including providing a substrate including a plurality of patterns thereon; forming a mask material solution layer such that the mask material solution layer covers the patterns on the substrate; and applying a liquid material to remove an upper portion of the mask material solution layer, wherein the mask material solution layer includes a fluorine additive concentrated at the upper portion of the mask material solution layer.

公开(公告)号：US20140124834A1

公开(公告)日：2014-05-08

申请号：US14017833

申请日：2013-09-04

Applicant: FUJIFILM CORPORATION ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyung-Rae Lee ,  Keita Kato ,  Atsushi Nakamura ,  Yool Kang ,  Suk-Koo Hong ,  Jae-Ho Kim ,  Dong-Jun Lee ,  Si-Young Lee

IPC: H01L21/308 ,  H01L27/092 ,  H01L29/78

CPC classification number: H01L29/7848 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/325 ,  G03F7/405 ,  H01L21/0274 ,  H01L21/3083 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823878 ,  H01L29/165 ,  H01L29/66636

Abstract: A method of fabricating a semiconductor device is disclosed comprising the steps of: providing a substrate having a first region, a second region and a plurality of gate electrodes which are formed on the first and second regions of the substrate; forming a mask film to expose the first region of the substrate while covering the second region of the substrate, such that the mask film has a negative lateral profile at a boundary between the first and second regions of the substrate; forming sigma trenches in the first region of the substrate by etching the first region of the substrate using the mask film and the gate electrodes as a mask; and forming an epitaxial layer in each of the sigma trenches.

Abstract translation: 公开了制造半导体器件的方法，包括以下步骤：提供形成在衬底的第一和第二区域上的具有第一区域，第二区域和多个栅电极的衬底; 形成掩模膜以在覆盖基板的第二区域的同时露出基板的第一区域，使得掩模膜在基板的第一和第二区域之间的边界处具有负的横向轮廓; 通过使用掩模膜和栅电极作为掩模蚀刻衬底的第一区域，在衬底的第一区域中形成硅沟槽; 以及在每个σ沟槽中形成外延层。

公开(公告)号：US09892915B2

公开(公告)日：2018-02-13

申请号：US15285570

申请日：2016-10-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Yun Yang ,  Seung Hyun Lee ,  Kyoung Sil Park ,  Yool Kang ,  Yi Seul Kim ,  Yun Seok Choi

IPC: H01L21/311 ,  H01L21/027 ,  H01L21/02 ,  H01L21/308

CPC classification number: H01L21/0271 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/02115 ,  H01L21/02282 ,  H01L21/02359 ,  H01L21/3081 ,  H01L51/0048

Abstract: A manufacturing method of a semiconductor device includes forming a hard mask layer on a semiconductor substrate using a hard mask composition. Hard mask patterns are formed by patterning the hard mask layer. Semiconductor patterns are formed by etching the semiconductor substrate using the hard mask patterns. The hard mask composition includes a plurality of first carbon nanotubes (CNTs) having a first length, a plurality of second CNTs having a second length, which is at least 3 times the first length, and a dispersing agent in which the first CNTs and the second CNTs are dispersed. The total mass of the first CNTs is 1 to 2.5 times the total mass of the second CNTs.

公开(公告)号：US09613821B2

公开(公告)日：2017-04-04

申请号：US14695047

申请日：2015-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yool Kang ,  Dong-won Kim ,  Ju-young Kim ,  Tae-hoon Kim ,  Hye-ji Kim ,  Su-min Park ,  Hyung-rae Lee

IPC: H01L21/308 ,  H01L21/311 ,  H01L21/02 ,  H01L21/027 ,  H01L21/033 ,  H01L21/3213 ,  H01L27/108 ,  H01L21/768

CPC classification number: H01L21/3086 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76816 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10885 ,  H01L27/10888

Abstract: Provided are a method of forming patterns and a method of manufacturing an integrated circuit device. In the method of forming patterns, a photoresist pattern having a first opening exposing a first region of a target layer is formed. A capping layer is formed at sidewalls of the photoresist pattern defining the first opening. An insoluble region is formed around the first opening by diffusing acid from the capping layer to the inside of the photoresist pattern. A second opening exposing a second region of the target layer is formed by removing a soluble region spaced apart from the first opening, with the insoluble region being interposed therebetween. The target layer is etched using the insoluble region as an etch mask.

公开(公告)号：US09337032B2

公开(公告)日：2016-05-10

申请号：US14445185

申请日：2014-07-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyung-Rae Lee ,  Yool Kang ,  Seong-Ji Kwon

IPC: G03F7/26 ,  H01L21/027 ,  G03F7/40 ,  H01L21/308 ,  H01L21/311

CPC classification number: H01L21/0273 ,  G03F7/26 ,  G03F7/40 ,  H01L21/3086 ,  H01L21/31144

Abstract: A method of forming a pattern of a semiconductor device includes providing a substrate, forming a photoresist layer by coating a resist composition including an acid generator and a first resin, the first resin having an acid-labile group, exposing the photoresist layer, forming a photoresist pattern by negatively developing the photoresist layer using a developing solution including an organic solvent, coating a capping composition including a second resin and the organic solvent on the substrate having the photoresist pattern formed thereon, and attaching a capping layer on upper and side surfaces of the photoresist pattern, by baking the capping composition and developing the capping composition using the developing solution including the organic solvent.

Abstract translation: 形成半导体器件的图案的方法包括提供基板，通过涂覆包含酸发生剂和第一树脂的抗蚀剂组合物形成光致抗蚀剂层，所述第一树脂具有酸不稳定基团，使光致抗蚀剂层曝光，形成 通过使用包含有机溶剂的显影溶液负性显影光致抗蚀剂层，在其上形成有光致抗蚀剂图案的基材上涂覆包含第二树脂和有机溶剂的封盖组合物，并且在上表面和侧表面上附着覆盖层， 光刻胶图案，通过烘烤封盖组合物并使用包含有机溶剂的显影溶液显影封盖组合物。

公开(公告)号：US20140004705A1

公开(公告)日：2014-01-02

申请号：US13711999

申请日：2012-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yool Kang ,  Suk-joo Lee ,  Jung-hyeon Lee ,  Shi-yong Yi

IPC: H01L21/027

CPC classification number: H01L21/027 ,  G03F7/0035 ,  G03F7/40 ,  H01L21/0273 ,  H01L21/0338 ,  H01L21/32139

Abstract: A method of forming fine patterns of a semiconductor device according to a double patterning process that uses acid diffusion is provided. In this method, a plurality of first mask patterns are formed on a substrate. A capping film including an acid source is formed on the exposed surface areas of the plurality of first mask patterns. A second mask layer is formed on the capping films. A plurality of acid diffused regions are formed within the second mask layer by diffusing acid obtained from the acid source from the capping films into the second mask layer. A plurality of second mask patterns are formed of residual parts of the second mask layer which remain after removing the acid diffused regions of the second mask layer.

Abstract translation: 提供了根据使用酸扩散的双重图案化工艺形成半导体器件的精细图案的方法。 在该方法中，在基板上形成多个第一掩模图案。 在多个第一掩模图案的暴露的表面区域上形成包括酸源的封盖膜。 在封盖膜上形成第二掩模层。 通过将从酸源获得的酸从封盖膜扩散到第二掩模层中，在第二掩模层内形成多个酸扩散区。 多个第二掩模图案由除去第二掩模层的酸扩散区域之后残留的第二掩模层的残留部分形成。

公开(公告)号：US20240319593A1

公开(公告)日：2024-09-26

申请号：US18381335

申请日：2023-10-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yool Kang ,  Taehui Kwon ,  Dongjun Kim ,  Ahram Suh ,  Miyeon Jung ,  Samjong Choi ,  Ohhwan Kweon ,  Minki Kim ,  Jaehyun Kim ,  Sunggun Shin ,  Seungryul Yoo ,  Heekyung Lee

IPC: G03F7/004 ,  G03F7/20

CPC classification number: G03F7/0048 ,  G03F7/2004

Abstract: Provided are a thinner composition, which may be generally used for an extreme ultraviolet (EUV) photoresist as well as KrF and ArF photoresists and exhibits improved performance in reduced resist coating (RRC) and edge bead removal (EBR), and which has an excellent pipe cleaning capability, and a method of treating a substrate surface by using the thinner composition. The thinner composition includes a C2-C4 alkylene glycol C1-C4 alkyl ether acetate, a C2-C3 alkylene glycol C1-C4 alkyl ether, and a cycloketone.

公开(公告)号：US10712662B2

公开(公告)日：2020-07-14

申请号：US15405612

申请日：2017-01-13

Applicant: Samsung Electronics Co., Ltd. ,  Dongjin Semichem Co., Ltd.

Inventor： Jin-A Ryu ,  Jung-Youl Lee ,  Kyung-Lyul Moon ,  Yool Kang ,  Hyun-Jin Kim ,  Yu-Jin Jeoung ,  Man-Ho Han

IPC: C08G18/02 ,  G03F7/11 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/027 ,  H01L49/02 ,  C09D175/00 ,  G03F7/004 ,  G03F7/09 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38 ,  H01L21/306 ,  H01L21/308

Abstract: A method of forming a pattern is disclosed. The method includes preparing a composition that includes a solvent and a polymer including a repeating unit in which at least one isocyanurate unit having a first structure is connected to another isocyanurate unit having a second structure different from the first structure; applying the composition on a substrate to form an underlayer; forming a photoresist layer on the underlayer; etching the photoresist layer to form a photoresist pattern; and patterning the substrate using the photoresist pattern.