公开(公告)号：US10236185B2

公开(公告)日：2019-03-19

申请号：US15686578

申请日：2017-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yool Kang ,  Kyoung-sil Park ,  Yun-seok Choi ,  Boo-deuk Kim ,  Ye-hwan Kim

IPC: H01L21/308 ,  H01L21/033 ,  H01L21/762 ,  H01L21/027 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L27/108 ,  B05D1/00 ,  B05D3/02

Abstract: A method of forming patterns for a semiconductor device includes preparing a hardmask composition including a carbon allotrope, a spin-on hardmask (SOH) material, an aromatic ring-containing polymer, and a solvent, applying the hardmask composition to an etching target layer, forming a hardmask by heat-treating the applied hardmask composition, forming a photoresist pattern on the hardmask, forming a hardmask pattern by etching the hardmask using the photoresist pattern as an etching mask, and forming an etched pattern by etching the etching target layer using the hardmask pattern as an etching mask.

公开(公告)号：US20180151362A1

公开(公告)日：2018-05-31

申请号：US15686578

申请日：2017-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yool KANG ,  Kyoung-sil Park ,  Yun-seok Choi ,  Boo-deuk Kim ,  Ye-hwan Kim

IPC: H01L21/033 ,  H01L21/762

CPC classification number: H01L21/3081 ,  B05D1/005 ,  B05D3/0254 ,  B05D3/0272 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/0271 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76224 ,  H01L27/10885 ,  H01L27/10888 ,  H01L27/10891

Abstract: A method of forming patterns for a semiconductor device includes preparing a hardmask composition including a carbon allotrope, a spin-on hardmask (SOH) material, an aromatic ring-containing polymer, and a solvent, applying the hardmask composition to an etching target layer, forming a hardmask by heat-treating the applied hardmask composition, forming a photoresist pattern on the hardmask, forming a hardmask pattern by etching the hardmask using the photoresist pattern as an etching mask, and forming an etched pattern by etching the etching target layer using the hardmask pattern as an etching mask.

公开(公告)号：US09899231B2

公开(公告)日：2018-02-20

申请号：US14996481

申请日：2016-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-hoon Kim ,  Nae-ry Yu ,  Boo-deuk Kim ,  Song-se Yi ,  Jung-sik Choi

IPC: H01L21/308 ,  H01L21/311 ,  G03F7/40 ,  H01L21/02 ,  H01L21/033 ,  G03F7/11

CPC classification number: H01L21/31144 ,  G03F7/11 ,  G03F7/40 ,  H01L21/02115 ,  H01L21/02282 ,  H01L21/0332

Abstract: Provided is a hard mask composition for spin-coating, and more particularly, a hard mask composition including a graphene copolymer and a solvent for spin-coating. The hard mask composition according to an exemplary embodiment has an improved etching resistance, and thus, etching with an increased aspect ratio may also be performed on a mask having a smaller thickness.