公开(公告)号：US20200234947A1

公开(公告)日：2020-07-23

申请号：US16733447

申请日：2020-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul-Ho KIM ,  Yool KANG ,  Jaesung KANG ,  Jinphil CHOI

IPC: H01L21/027 ,  H01L21/311 ,  H01L21/02

Abstract: A method of forming a mask pattern and a method of fabricating a semiconductor device, the method of forming a mask pattern including providing a substrate including a plurality of patterns thereon; forming a mask material solution layer such that the mask material solution layer covers the patterns on the substrate; and applying a liquid material to remove an upper portion of the mask material solution layer, wherein the mask material solution layer includes a fluorine additive concentrated at the upper portion of the mask material solution layer.

公开(公告)号：US20170199459A1

公开(公告)日：2017-07-13

申请号：US15405612

申请日：2017-01-13

Applicant: Samsung Electronics Co., Ltd. ,  Dongjin Semichem Co., Ltd.

Inventor： Jin-A RYU ,  Jung-Youl LEE ,  Kyung-Lyul MOON ,  Yool KANG ,  Hyun-Jin KIM ,  Yu-Jin JEOUNG ,  Man-Ho HAN

IPC: G03F7/11 ,  G03F7/20 ,  C08G18/02 ,  C09D175/00 ,  H01L21/306 ,  G03F7/16 ,  G03F7/38 ,  G03F7/32 ,  H01L21/308 ,  G03F7/004 ,  G03F7/09

CPC classification number: G03F7/11 ,  C08G18/022 ,  C09D175/00 ,  G03F7/0045 ,  G03F7/091 ,  G03F7/094 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/38 ,  H01L21/0276 ,  H01L21/30604 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139 ,  H01L28/00

Abstract: A method of forming a pattern is disclosed. The method includes preparing a composition that includes a solvent and a polymer including a repeating unit in which at least one isocyanurate unit having a first structure is connected to another isocyanurate unit having a second structure different from the first structure; applying the composition on a substrate to form an underlayer; forming a photoresist layer on the underlayer; etching the photoresist layer to form a photoresist pattern; and patterning the substrate using the photoresist pattern.

公开(公告)号：US20150118852A1

公开(公告)日：2015-04-30

申请号：US14445185

申请日：2014-07-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyung-Rae LEE ,  Yool KANG ,  Seong-Ji KWON

IPC: H01L21/308 ,  H01L21/027

CPC classification number: H01L21/0273 ,  G03F7/26 ,  G03F7/40 ,  H01L21/3086 ,  H01L21/31144

Abstract: A method of forming a pattern of a semiconductor device includes providing a substrate, forming a photoresist layer by coating a resist composition including an acid generator and a first resin, the first resin having an acid-labile group, exposing the photoresist layer, forming a photoresist pattern by negatively developing the photoresist layer using a developing solution including an organic solvent, coating a capping composition including a second resin and the organic solvent on the substrate having the photoresist pattern formed thereon, and attaching a capping layer on upper and side surfaces of the photoresist pattern, by baking the capping composition and developing the capping composition using the developing solution including the organic solvent.

Abstract translation: 形成半导体器件的图案的方法包括提供基板，通过涂覆包含酸发生剂和第一树脂的抗蚀剂组合物形成光致抗蚀剂层，所述第一树脂具有酸不稳定基团，使光致抗蚀剂层曝光，形成 通过使用包含有机溶剂的显影溶液负性显影光致抗蚀剂层，在其上形成有光致抗蚀剂图案的基材上涂覆包含第二树脂和有机溶剂的封盖组合物，并且在上表面和侧表面上附着覆盖层， 光刻胶图案，通过烘烤封盖组合物并使用包含有机溶剂的显影溶液显影封盖组合物。

公开(公告)号：US20180151362A1

公开(公告)日：2018-05-31

申请号：US15686578

申请日：2017-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yool KANG ,  Kyoung-sil Park ,  Yun-seok Choi ,  Boo-deuk Kim ,  Ye-hwan Kim

IPC: H01L21/033 ,  H01L21/762

CPC classification number: H01L21/3081 ,  B05D1/005 ,  B05D3/0254 ,  B05D3/0272 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/0271 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76224 ,  H01L27/10885 ,  H01L27/10888 ,  H01L27/10891

Abstract: A method of forming patterns for a semiconductor device includes preparing a hardmask composition including a carbon allotrope, a spin-on hardmask (SOH) material, an aromatic ring-containing polymer, and a solvent, applying the hardmask composition to an etching target layer, forming a hardmask by heat-treating the applied hardmask composition, forming a photoresist pattern on the hardmask, forming a hardmask pattern by etching the hardmask using the photoresist pattern as an etching mask, and forming an etched pattern by etching the etching target layer using the hardmask pattern as an etching mask.

公开(公告)号：US20170186602A1

公开(公告)日：2017-06-29

申请号：US15285570

申请日：2016-10-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Yun YANG ,  Seung Hyun LEE ,  Kyoung Sil PARK ,  Yool KANG ,  Yi Seul KIM ,  Yun Seok CHOI

IPC: H01L21/027 ,  H01L21/308 ,  H01L21/02

CPC classification number: H01L21/0271 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/02115 ,  H01L21/02282 ,  H01L21/02359 ,  H01L21/3081 ,  H01L51/0048

Abstract: A manufacturing method of a semiconductor device includes forming a hard mask layer on a semiconductor substrate using a hard mask composition. Hard mask patterns are formed by patterning the hard mask layer. Semiconductor patterns are formed by etching the semiconductor substrate using the hard mask patterns. The hard mask composition includes a plurality of first carbon nanotubes (CNTs) having a first length, a plurality of second CNTs having a second length, which is at least 3 times the first length, and a dispersing agent in which the first CNTs and the second CNTs are dispersed. The total mass of the first CNTs is 1 to 2.5 times the total mass of the second CNTs.