METHOD OF FORMING PATTERN OF SEMICONDUCTOR DEVICE
    2.
    发明申请
    METHOD OF FORMING PATTERN OF SEMICONDUCTOR DEVICE 有权
    形成半导体器件图案的方法

    公开(公告)号:US20150118852A1

    公开(公告)日:2015-04-30

    申请号:US14445185

    申请日:2014-07-29

    Abstract: A method of forming a pattern of a semiconductor device includes providing a substrate, forming a photoresist layer by coating a resist composition including an acid generator and a first resin, the first resin having an acid-labile group, exposing the photoresist layer, forming a photoresist pattern by negatively developing the photoresist layer using a developing solution including an organic solvent, coating a capping composition including a second resin and the organic solvent on the substrate having the photoresist pattern formed thereon, and attaching a capping layer on upper and side surfaces of the photoresist pattern, by baking the capping composition and developing the capping composition using the developing solution including the organic solvent.

    Abstract translation: 形成半导体器件的图案的方法包括提供基板,通过涂覆包含酸发生剂和第一树脂的抗蚀剂组合物形成光致抗蚀剂层,所述第一树脂具有酸不稳定基团,使光致抗蚀剂层曝光,形成 通过使用包含有机溶剂的显影溶液负性显影光致抗蚀剂层,在其上形成有光致抗蚀剂图案的基材上涂覆包含第二树脂和有机溶剂的封盖组合物,并且在上表面和侧表面上附着覆盖层, 光刻胶图案,通过烘烤封盖组合物并使用包含有机溶剂的显影溶液显影封盖组合物。

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