公开(公告)号：US09613821B2

公开(公告)日：2017-04-04

申请号：US14695047

申请日：2015-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yool Kang ,  Dong-won Kim ,  Ju-young Kim ,  Tae-hoon Kim ,  Hye-ji Kim ,  Su-min Park ,  Hyung-rae Lee

IPC: H01L21/308 ,  H01L21/311 ,  H01L21/02 ,  H01L21/027 ,  H01L21/033 ,  H01L21/3213 ,  H01L27/108 ,  H01L21/768

CPC classification number: H01L21/3086 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76816 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10885 ,  H01L27/10888

Abstract: Provided are a method of forming patterns and a method of manufacturing an integrated circuit device. In the method of forming patterns, a photoresist pattern having a first opening exposing a first region of a target layer is formed. A capping layer is formed at sidewalls of the photoresist pattern defining the first opening. An insoluble region is formed around the first opening by diffusing acid from the capping layer to the inside of the photoresist pattern. A second opening exposing a second region of the target layer is formed by removing a soluble region spaced apart from the first opening, with the insoluble region being interposed therebetween. The target layer is etched using the insoluble region as an etch mask.