公开(公告)号：US10763335B2

公开(公告)日：2020-09-01

申请号：US16203197

申请日：2018-11-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonkeun Chung ,  Heonbok Lee ,  Chunghwan Shin ,  Youngsuk Chai ,  Sangjin Hyun

IPC: H01L29/423 ,  H01L29/08 ,  H01L27/092 ,  H01L29/78 ,  H01L29/66

Abstract: A semiconductor device includes a substrate having an active pattern therein, a gate electrode extending across the active pattern and a source/drain region on the active pattern laterally adjacent the gate electrode. The device further includes a contact structure including a first contact on the source/drain region, a second contact on the first contact and a spacer on sidewalls of the first and second contacts.

公开(公告)号：US20200035678A1

公开(公告)日：2020-01-30

申请号：US16592330

申请日：2019-10-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongsoo LEE ,  Wonkeun Chung ,  Hoonjoo Na ,  Suyoung Bae ,  Jaeyeol Song ,  Jonghan Lee ,  HyungSuk Jung ,  Sangjin Hyun

IPC: H01L27/092 ,  H01L29/786 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L21/8238

Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device comprises a first transistor on a substrate, and a second transistor on the substrate. Each of the first and second transistors includes a plurality of semiconductor patterns vertically stacked on the substrate and vertically spaced apart from each other, and a gate dielectric pattern and a work function pattern filling a space between the semiconductor patterns. The work function pattern of the first transistor includes a first work function metal layer, the work function pattern of the second transistor includes the first work function metal layer and a second work function metal layer, the first work function metal layer of each of the first and second transistors has a work function greater than that of the second work function metal layer, and the first transistor has a threshold voltage less than that of the second transistor.

公开(公告)号：US11742351B2

公开(公告)日：2023-08-29

申请号：US17384920

申请日：2021-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongsoo Lee ,  Wonkeun Chung ,  Hoonjoo Na ,  Suyoung Bae ,  Jaeyeol Song ,  Jonghan Lee ,  HyungSuk Jung ,  Sangjin Hyun

IPC: H01L27/092 ,  H01L29/786 ,  H01L29/49 ,  H01L29/51 ,  H01L29/423 ,  H01L27/088 ,  H01L21/8238

CPC classification number: H01L27/0922 ,  H01L21/823842 ,  H01L29/42392 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/78696

Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device comprises a first transistor on a substrate, and a second transistor on the substrate. Each of the first and second transistors includes a plurality of semiconductor patterns vertically stacked on the substrate and vertically spaced apart from each other, and a gate dielectric pattern and a work function pattern filling a space between the semiconductor patterns. The work function pattern of the first transistor includes a first work function metal layer, the work function pattern of the second transistor includes the first work function metal layer and a second work function metal layer, the first work function metal layer of each of the first and second transistors has a work function greater than that of the second work function metal layer, and the first transistor has a threshold voltage less than that of the second transistor.

公开(公告)号：US20200035801A1

公开(公告)日：2020-01-30

申请号：US16592309

申请日：2019-10-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonkeun Chung ,  Jae-Jung Kim ,  Jinkyu Jang ,  Sangyong Kim ,  Hoonjoo Na ,  Dongsoo Lee ,  Sangjin Hyun

IPC: H01L29/423 ,  H01L29/66 ,  H01L29/06 ,  B82Y10/00 ,  H01L29/775 ,  H01L27/11 ,  H01L29/786 ,  H01L29/49 ,  H01L29/51 ,  H01L21/28

Abstract: A semiconductor device includes first semiconductor patterns vertically stacked on a substrate and vertically spaced apart from each other, and a first gate electrode on the first semiconductor patterns. The first gate electrode comprises a first work function metal pattern on a top surface, a bottom surface, and sidewalls of respective ones of the first semiconductor patterns, a barrier pattern on the first work function metal pattern, and a first electrode pattern on the barrier pattern. The first gate electrode has a first part between adjacent ones of the first semiconductor patterns. The barrier pattern comprises a silicon-containing metal nitride layer. The barrier pattern and the first electrode pattern are spaced apart from the first part.

公开(公告)号：US10468411B2

公开(公告)日：2019-11-05

申请号：US16017024

申请日：2018-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonkeun Chung ,  Gigwan Park ,  Huyong Lee ,  TaekSoo Jeon ,  Sangjin Hyun

IPC: H01L29/06 ,  H01L29/423 ,  H01L21/28 ,  H01L27/092 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/088 ,  H01L29/49 ,  H01L29/78 ,  H01L29/66 ,  H01L29/43

Abstract: A semiconductor device includes a substrate having an active pattern thereon, a gate electrode intersecting the active pattern, and a spacer on a sidewall of the gate electrode. The gate electrode includes a first metal pattern adjacent to the active pattern. The first metal pattern has a first portion parallel to the sidewall and a second portion parallel to the substrate. A top surface of the first portion has a descent in a direction from the spacer towards the second portion.

公开(公告)号：US11195927B2

公开(公告)日：2021-12-07

申请号：US16998493

申请日：2020-08-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wonkeun Chung ,  HeonBok Lee ,  Chunghwan Shin ,  Youngsuk Chai ,  Sangjin Hyun

IPC: H01L29/08 ,  H01L27/092 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66

Abstract: A semiconductor device includes a substrate having an active pattern therein, a gate electrode extending across the active pattern and a source/drain region on the active pattern laterally adjacent the gate electrode. The device further includes a contact structure including a first contact on the source/drain region, a second contact on the first contact and a spacer on sidewalls of the first and second contacts.

公开(公告)号：US11121131B2

公开(公告)日：2021-09-14

申请号：US16592330

申请日：2019-10-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongsoo Lee ,  Wonkeun Chung ,  Hoonjoo Na ,  Suyoung Bae ,  Jaeyeol Song ,  Jonghan Lee ,  HyungSuk Jung ,  Sangjin Hyun

IPC: H01L27/092 ,  H01L29/786 ,  H01L29/49 ,  H01L29/51 ,  H01L29/423 ,  H01L29/66 ,  H01L29/06 ,  H01L21/8238

Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device comprises a first transistor on a substrate, and a second transistor on the substrate. Each of the first and second transistors includes a plurality of semiconductor patterns vertically stacked on the substrate and vertically spaced apart from each other, and a gate dielectric pattern and a work function pattern filling a space between the semiconductor patterns. The work function pattern of the first transistor includes a first work function metal layer, the work function pattern of the second transistor includes the first work function metal layer and a second work function metal layer, the first work function metal layer of each of the first and second transistors has a work function greater than that of the second work function metal layer, and the first transistor has a threshold voltage less than that of the second transistor.

公开(公告)号：US10461167B2

公开(公告)日：2019-10-29

申请号：US15861949

申请日：2018-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongsoo Lee ,  Wonkeun Chung ,  Hoonjoo Na ,  Suyoung Bae ,  Jaeyeol Song ,  Jonghan Lee ,  HyungSuk Jung ,  Sangjin Hyun

IPC: H01L29/49 ,  H01L21/82 ,  H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  H01L29/06 ,  H01L29/36

Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device comprises a first transistor on a substrate, and a second transistor on the substrate. Each of the first and second transistors includes a plurality of semiconductor patterns vertically stacked on the substrate and vertically spaced apart from each other, and a gate dielectric pattern and a work function pattern filling a space between the semiconductor patterns. The work function pattern of the first transistor includes a first work function metal layer, the work function pattern of the second transistor includes the first work function metal layer and a second work function metal layer, the first work function metal layer of each of the first and second transistors has a work function greater than that of the second work function metal layer, and the first transistor has a threshold voltage less than that of the second transistor.

公开(公告)号：US10892342B2

公开(公告)日：2021-01-12

申请号：US16803130

申请日：2020-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonkeun Chung ,  Jae-Jung Kim ,  Jinkyu Jang ,  Sangyong Kim ,  Hoonjoo Na ,  Dongsoo Lee ,  Sangjin Hyun

IPC: H01L29/423 ,  H01L29/786 ,  H01L29/775 ,  H01L29/06 ,  H01L29/66 ,  H01L29/51 ,  H01L29/49 ,  H01L27/11 ,  H01L21/28 ,  B82Y10/00

Abstract: A semiconductor device includes first semiconductor patterns vertically stacked on a substrate and vertically spaced apart from each other, and a first gate electrode on the first semiconductor patterns. The first gate electrode comprises a first work function metal pattern on a top surface, a bottom surface, and sidewalls of respective ones of the first semiconductor patterns, a barrier pattern on the first work function metal pattern, and a first electrode pattern on the barrier pattern. The first gate electrode has a first part between adjacent ones of the first semiconductor patterns. The barrier pattern comprises a silicon-containing metal nitride layer. The barrier pattern and the first electrode pattern are spaced apart from the first part.

公开(公告)号：US10475898B2

公开(公告)日：2019-11-12

申请号：US15938716

申请日：2018-03-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonkeun Chung ,  Jae-Jung Kim ,  Jinkyu Jang ,  Sangyong Kim ,  Hoonjoo Na ,  Dongsoo Lee ,  Sangjin Hyun

IPC: H01L21/28 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H01L29/51 ,  H01L27/11 ,  H01L29/06

Abstract: A semiconductor device includes first semiconductor patterns vertically stacked on a substrate and vertically spaced apart from each other, and a first gate electrode on the first semiconductor patterns. The first gate electrode comprises a first work function metal pattern on a top surface, a bottom surface, and sidewalls of respective ones of the first semiconductor patterns, a barrier pattern on the first work function metal pattern, and a first electrode pattern on the barrier pattern. The first gate electrode has a first part between adjacent ones of the first semiconductor patterns. The barrier pattern comprises a silicon-containing metal nitride layer. The barrier pattern and the first electrode pattern are spaced apart from the first part.