公开(公告)号：US20200035801A1

公开(公告)日：2020-01-30

申请号：US16592309

申请日：2019-10-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonkeun Chung ,  Jae-Jung Kim ,  Jinkyu Jang ,  Sangyong Kim ,  Hoonjoo Na ,  Dongsoo Lee ,  Sangjin Hyun

IPC: H01L29/423 ,  H01L29/66 ,  H01L29/06 ,  B82Y10/00 ,  H01L29/775 ,  H01L27/11 ,  H01L29/786 ,  H01L29/49 ,  H01L29/51 ,  H01L21/28

Abstract: A semiconductor device includes first semiconductor patterns vertically stacked on a substrate and vertically spaced apart from each other, and a first gate electrode on the first semiconductor patterns. The first gate electrode comprises a first work function metal pattern on a top surface, a bottom surface, and sidewalls of respective ones of the first semiconductor patterns, a barrier pattern on the first work function metal pattern, and a first electrode pattern on the barrier pattern. The first gate electrode has a first part between adjacent ones of the first semiconductor patterns. The barrier pattern comprises a silicon-containing metal nitride layer. The barrier pattern and the first electrode pattern are spaced apart from the first part.

公开(公告)号：US11411124B2

公开(公告)日：2022-08-09

申请号：US17134611

申请日：2020-12-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Jung Kim ,  Dong-Soo Lee ,  Sang-Yong Kim ,  Jin-Kyu Jang ,  Won-Keun Chung ,  Sang-Jin Hyun

IPC: H01L21/28 ,  H01L29/792 ,  H01L27/092 ,  H01L29/49 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/423 ,  H01L29/06 ,  H01L29/775 ,  H01L29/10 ,  B82Y10/00 ,  H01L29/786 ,  H01L27/088

Abstract: A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.

公开(公告)号：US10923602B2

公开(公告)日：2021-02-16

申请号：US16532645

申请日：2019-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Jung Kim ,  Dong-Soo Lee ,  Sang-Yong Kim ,  Jin-Kyu Jang ,  Won-Keun Chung ,  Sang-Jin Hyun

IPC: H01L29/792 ,  H01L27/092 ,  H01L29/49 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/28 ,  H01L29/66 ,  H01L29/423 ,  H01L29/06 ,  H01L29/775 ,  H01L29/10 ,  B82Y10/00 ,  H01L29/786 ,  H01L27/088

Abstract: A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.

公开(公告)号：US20190081148A1

公开(公告)日：2019-03-14

申请号：US15938716

申请日：2018-03-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonkeun Chung ,  Jae-Jung Kim ,  Jinkyu Jang ,  Sangyong Kim ,  Hoonjoo Na ,  Dongsoo Lee ,  Sangjin Hyun

IPC: H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H01L29/51 ,  H01L21/28

Abstract: A semiconductor device includes first semiconductor patterns vertically stacked on a substrate and vertically spaced apart from each other, and a first gate electrode on the first semiconductor patterns. The first gate electrode comprises a first work function metal pattern on a top surface, a bottom surface, and sidewalls of respective ones of the first semiconductor patterns, a barrier pattern on the first work function metal pattern, and a first electrode pattern on the barrier pattern. The first gate electrode has a first part between adjacent ones of the first semiconductor patterns. The barrier pattern comprises a silicon-containing metal nitride layer. The barrier pattern and the first electrode pattern are spaced apart from the first part.

公开(公告)号：US12062706B2

公开(公告)日：2024-08-13

申请号：US17503764

申请日：2021-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Jung Kim ,  Sang Yong Kim ,  Byoung Hoon Lee ,  Chan Hyeong Lee

IPC: H01L29/423 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/06

CPC classification number: H01L29/42392 ,  H01L21/823431 ,  H01L21/82345 ,  H01L21/823821 ,  H01L29/0673

Abstract: A semiconductor device includes an active pattern disposed on a substrate. A gate insulating film is disposed on the active pattern and extends along the active pattern. A work function adjustment pattern is disposed on the gate insulating film and extends along the gate insulating film. A gate electrode is disposed on the work function adjustment pattern. The work function adjustment pattern includes a first work function adjustment film, a second work function adjustment film that includes aluminum and wraps the first work function adjustment film, and a barrier film including titanium silicon nitride (TiSiN). A silicon concentration of the barrier film is in a range of about 30 at % or less.

公开(公告)号：US10381490B2

公开(公告)日：2019-08-13

申请号：US16040807

申请日：2018-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Jung Kim ,  Dong-Soo Lee ,  Sang-Yong Kim ,  Jin-Kyu Jang ,  Won-Keun Chung ,  Sang-Jin Hyun

IPC: H01L21/8234 ,  H01L29/792 ,  H01L27/092 ,  H01L29/49 ,  H01L29/78 ,  H01L21/8238 ,  H01L21/28 ,  H01L29/66

Abstract: A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.

公开(公告)号：US20180331100A1

公开(公告)日：2018-11-15

申请号：US16028272

申请日：2018-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hye-Lan Lee ,  Sang-Bom Kang ,  Jae-Jung Kim ,  Moon-Kyu Park ,  Jae-Yeol Song ,  June-Hee Lee ,  Yong-Ho Ha ,  Sang-Jin Hyun

IPC: H01L27/088 ,  H01L21/84 ,  H01L29/66 ,  H01L29/49 ,  H01L21/8238 ,  H01L27/12 ,  H01L27/092 ,  H01L29/51 ,  H01L29/165

CPC classification number: H01L27/0886 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/165 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545

Abstract: A semiconductor device includes a substrate and first and second gate electrodes on the substrate. The first gate electrode includes a first gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion and away from the substrate defining a first trench having a first width and a first functional film filling the first trench. The second gate electrode includes a second gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion defining a second trench having a second width different from the first width, a second functional film conforming to the second gate insulation film in the second trench and defining a third trench, and a metal region in the third trench. The first width may be less than the second width.

公开(公告)号：US11784260B2

公开(公告)日：2023-10-10

申请号：US17863127

申请日：2022-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Jung Kim ,  Dong-Soo Lee ,  Sang-Yong Kim ,  Jin-Kyu Jang ,  Won-Keun Chung ,  Sang-Jin Hyun

IPC: H01L29/792 ,  H01L27/092 ,  H01L29/49 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/28 ,  H01L29/66 ,  H01L29/423 ,  H01L29/06 ,  H01L29/775 ,  H01L29/10 ,  B82Y10/00 ,  H01L29/786 ,  H01L27/088

CPC classification number: H01L29/7926 ,  B82Y10/00 ,  H01L21/28088 ,  H01L21/82345 ,  H01L21/823842 ,  H01L27/088 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/0692 ,  H01L29/1079 ,  H01L29/42376 ,  H01L29/42392 ,  H01L29/4966 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/785 ,  H01L29/78696 ,  H01L21/823462 ,  H01L21/823857

Abstract: A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.

公开(公告)号：US11127739B2

公开(公告)日：2021-09-21

申请号：US16028272

申请日：2018-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hye-Lan Lee ,  Sang-Bom Kang ,  Jae-Jung Kim ,  Moon-Kyu Park ,  Jae-Yeol Song ,  June-Hee Lee ,  Yong-Ho Ha ,  Sang-Jin Hyun

IPC: H01L21/8238 ,  H01L27/088 ,  H01L29/49 ,  H01L29/66 ,  H01L21/84 ,  H01L27/092 ,  H01L27/12 ,  H01L29/51

Abstract: A semiconductor device includes a substrate and first and second gate electrodes on the substrate. The first gate electrode includes a first gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion and away from the substrate defining a first trench having a first width and a first functional film filling the first trench. The second gate electrode includes a second gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion defining a second trench having a second width different from the first width, a second functional film conforming to the second gate insulation film in the second trench and defining a third trench, and a metal region in the third trench. The first width may be less than the second width.

公开(公告)号：US10892342B2

公开(公告)日：2021-01-12

申请号：US16803130

申请日：2020-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonkeun Chung ,  Jae-Jung Kim ,  Jinkyu Jang ,  Sangyong Kim ,  Hoonjoo Na ,  Dongsoo Lee ,  Sangjin Hyun

IPC: H01L29/423 ,  H01L29/786 ,  H01L29/775 ,  H01L29/06 ,  H01L29/66 ,  H01L29/51 ,  H01L29/49 ,  H01L27/11 ,  H01L21/28 ,  B82Y10/00

Abstract: A semiconductor device includes first semiconductor patterns vertically stacked on a substrate and vertically spaced apart from each other, and a first gate electrode on the first semiconductor patterns. The first gate electrode comprises a first work function metal pattern on a top surface, a bottom surface, and sidewalls of respective ones of the first semiconductor patterns, a barrier pattern on the first work function metal pattern, and a first electrode pattern on the barrier pattern. The first gate electrode has a first part between adjacent ones of the first semiconductor patterns. The barrier pattern comprises a silicon-containing metal nitride layer. The barrier pattern and the first electrode pattern are spaced apart from the first part.