公开(公告)号：US20240038732A1

公开(公告)日：2024-02-01

申请号：US18487247

申请日：2023-10-16

申请人： Samsung Electronics Co., Ltd.

发明人： Eunsuk Jung ,  Hyoukyung Cho ,  Jinnam Kim ,  Hyungjun Jeon ,  Kwangjin Moon ,  Hoonjoo Na ,  Hakseung Lee

IPC分类号： H01L25/065 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L25/0657 ,  H01L23/3128 ,  H01L24/08 ,  H01L2224/08146

摘要： A semiconductor package includes first to fourth semiconductor chips sequentially stacked on one another. A backside of a third substrate of the third semiconductor chip may be arranged to face a backside surface of a second substrate of the second semiconductor chip such that the third substrate and a second backside insulation layer provided on the backside surface of the second substrate are bonded directly to each other, or the backside of the third substrate may be arranged to face a front surface of the second substrate such that the third substrate and a second front insulation layer provided on the front surface of the second substrate are bonded directly to each other.

公开(公告)号：US11887966B2

公开(公告)日：2024-01-30

申请号：US17376784

申请日：2021-07-15

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jinnam Kim ,  Seokho Kim ,  Hoonjoo Na ,  Kwangjin Moon

IPC分类号： H01L25/065 ,  H01L25/18 ,  H01L23/48 ,  H01L23/00

CPC分类号： H01L25/0657 ,  H01L23/481 ,  H01L24/05 ,  H01L24/08 ,  H01L24/16 ,  H01L24/48 ,  H01L25/18 ,  H01L2224/05147 ,  H01L2224/08145 ,  H01L2224/16227 ,  H01L2224/48227 ,  H01L2225/06541

摘要： A semiconductor package includes a first structure including a first semiconductor chip, and a second structure on the first structure. The second structure includes a second semiconductor chip, a semiconductor pattern horizontally spaced apart from the second semiconductor chip and on a side surface of the second semiconductor chip, an insulating gap fill pattern between the second semiconductor chip and the semiconductor pattern, and through-electrode structures. At least one of the through-electrode structures penetrates through at least a portion of the second semiconductor chip or penetrates through the semiconductor pattern.

公开(公告)号：US11887841B2

公开(公告)日：2024-01-30

申请号：US17194575

申请日：2021-03-08

申请人： Samsung Electronics Co., Ltd.

发明人： Kyuha Lee ,  Joohee Jang ,  Seokho Kim ,  Hoonjoo Na ,  Jaehyung Park ,  Seongmin Son ,  Yikoan Hong

IPC分类号： H01L25/065 ,  H01L23/538

CPC分类号： H01L25/0657 ,  H01L23/5385 ,  H01L23/5386

摘要： A semiconductor package includes a first semiconductor chip, a second semiconductor chip, first main connection pad structures, and first dummy connection pad structures. The first main connection pad structures are arranged at an interface between the first semiconductor chip and the second semiconductor chip and arranged to be apart from each other by a first main pitch in a first direction parallel to a top surface of the first semiconductor chip, wherein each of the first main connection pad structures includes a first connection pad electrically connected to the first semiconductor chip, and a second connection pad electrically connected to the second semiconductor chip and contacting the first connection pad. The first dummy connection pad structures are arranged at an interface between the first semiconductor chip and the second semiconductor chip, are arranged to be apart from the first main connection pad structures, and are arranged to be apart from each other by a first dummy pitch in the first direction, the first dummy pitch being greater than the first main pitch.

公开(公告)号：US11721628B2

公开(公告)日：2023-08-08

申请号：US16863126

申请日：2020-04-30

申请人： Samsung Electronics Co., Ltd.

发明人： Jinnam Kim ,  Kwangjin Moon ,  Hojin Lee ,  Pilkyu Kang ,  Hoonjoo Na

IPC分类号： H01L23/535 ,  H01L29/78 ,  H01L29/08 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66 ,  H01L23/48 ,  H01L23/528 ,  H01L23/485 ,  H01L21/768

CPC分类号： H01L23/535 ,  H01L21/76805 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76895 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/485 ,  H01L23/5286 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/7851

摘要： A semiconductor device includes a substrate having a first surface and a second surface opposite to each other, and having an active region located on the first surface and defined by a first isolation region; a plurality of active fins arranged on the active region, extending in a first direction, and defined by a second isolation region having a second depth smaller than a first depth of the first isolation region; a buried conductive wiring in a trench adjacent to the plurality of active fins, and extending in a direction of the trench; a filling insulation portion in the trench, and having the buried conductive wiring therein; an interlayer insulation layer on the first and second isolation regions and on the buried conductive wiring; a contact structure penetrating the interlayer insulation layer, and contacting the buried conductive wiring; and a conductive through structure extending through the substrate from the second surface to the trench, and contacting the buried conductive wiring.

公开(公告)号：US11594443B2

公开(公告)日：2023-02-28

申请号：US16892492

申请日：2020-06-04

申请人： Samsung Electronics Co., Ltd.

发明人： Hoechul Kim ,  Taeyeong Kim ,  Hakjun Lee ,  Hoonjoo Na

IPC分类号： H01L21/683 ,  H01L21/50 ,  H01L23/00 ,  H01L21/603

摘要： A substrate bonding apparatus includes a first bonding chuck configured to support a first substrate and a second bonding chuck configured to support a second substrate such that the second substrate faces the first substrate. The first bonding chuck includes a first base, a first deformable plate on the first base and configured to support the first substrate and configured to be deformed such that a distance between the first base and the first deformable plate is varied, and a first piezoelectric sheet on the first deformable plate and configured to be deformed in response to power applied thereto to deform the first deformable plate.

公开(公告)号：US11552096B2

公开(公告)日：2023-01-10

申请号：US17160874

申请日：2021-01-28

申请人： Samsung Electronics Co., Ltd.

发明人： Seungha Oh ,  Weonhong Kim ,  Hoonjoo Na

IPC分类号： H01L27/11578 ,  H01L27/11524 ,  H01L27/088 ,  H01L27/11519 ,  H01L27/108 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11551

摘要： A three-dimensional semiconductor device includes a first substrate; a plurality of first transistors on the first substrate; a second substrate on the plurality of first transistors; a plurality of second transistors on the second substrate; and an interconnection portion electrically connecting the plurality of first transistors and the plurality of second transistors. Each of the plurality of first transistors includes a first gate insulating film on the first substrate and having a first hydrogen content. Each of the plurality of second transistors includes a second gate insulating film on the second substrate and having a second hydrogen content. The second hydrogen content is greater than the first hydrogen content.

公开(公告)号：US11380607B2

公开(公告)日：2022-07-05

申请号：US17147927

申请日：2021-01-13

申请人： Samsung Electronics Co., Ltd.

发明人： Jinnam Kim ,  Seokho Kim ,  Hoonjoo Na ,  Kwangjin Moon

IPC分类号： H01L23/48 ,  H01L29/06 ,  H01L29/78 ,  H01L29/66

摘要： A semiconductor device includes a substrate having a first surface on which an active region is disposed, and a second surface opposite the first surface, a buried conductive line extending in one direction and having a portion buried in the active region, an insulating portion covering the buried conductive line, a contact structure disposed on the insulating portion and connected to the buried conductive line, a through-hole extending from the second surface to the insulating portion and exposing the buried portion of the buried conductive line, an insulating isolation film disposed on a side surface of the buried conductive line and exposing a bottom surface of the buried portion and a side surface adjacent to the bottom surface, a through-via contacting the bottom surface and the adjacent side surface of the buried conductive line, an insulating liner surrounding the through-via.

公开(公告)号：US20200035678A1

公开(公告)日：2020-01-30

申请号：US16592330

申请日：2019-10-03

申请人： Samsung Electronics Co., Ltd.

发明人： Dongsoo LEE ,  Wonkeun Chung ,  Hoonjoo Na ,  Suyoung Bae ,  Jaeyeol Song ,  Jonghan Lee ,  HyungSuk Jung ,  Sangjin Hyun

IPC分类号： H01L27/092 ,  H01L29/786 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L21/8238

摘要： Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device comprises a first transistor on a substrate, and a second transistor on the substrate. Each of the first and second transistors includes a plurality of semiconductor patterns vertically stacked on the substrate and vertically spaced apart from each other, and a gate dielectric pattern and a work function pattern filling a space between the semiconductor patterns. The work function pattern of the first transistor includes a first work function metal layer, the work function pattern of the second transistor includes the first work function metal layer and a second work function metal layer, the first work function metal layer of each of the first and second transistors has a work function greater than that of the second work function metal layer, and the first transistor has a threshold voltage less than that of the second transistor.

公开(公告)号：US12021080B2

公开(公告)日：2024-06-25

申请号：US18353214

申请日：2023-07-17

申请人： Samsung Electronics Co., Ltd.

发明人： Dongsoo Lee ,  Wonkeun Chung ,  Hoonjoo Na ,  Suyoung Bae ,  Jaeyeol Song ,  Jonghan Lee ,  HyungSuk Jung ,  Sangjin Hyun

IPC分类号： H01L27/092 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/786

CPC分类号： H01L27/0922 ,  H01L21/823842 ,  H01L29/42392 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/78696

摘要： Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device comprises a first transistor on a substrate, and a second transistor on the substrate. Each of the first and second transistors includes a plurality of semiconductor patterns vertically stacked on the substrate and vertically spaced apart from each other, and a gate dielectric pattern and a work function pattern filling a space between the semiconductor patterns. The work function pattern of the first transistor includes a first work function metal layer, the work function pattern of the second transistor includes the first work function metal layer and a second work function metal layer, the first work function metal layer of each of the first and second transistors has a work function greater than that of the second work function metal layer, and the first transistor has a threshold voltage less than that of the second transistor.

公开(公告)号：US11824035B2

公开(公告)日：2023-11-21

申请号：US17826756

申请日：2022-05-27

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jaehyung Park ,  Seokho Kim ,  Hoonjoo Na ,  Kwangjin Moon ,  Kyuha Lee ,  Joohee Jang

IPC分类号： H01L23/00 ,  H10K19/20 ,  H10K39/32 ,  H01L27/146

CPC分类号： H01L24/32 ,  H01L24/83 ,  H10K19/20 ,  H10K39/32 ,  H01L27/14647 ,  H01L2224/32145 ,  H01L2224/32501 ,  H01L2224/83359 ,  H01L2224/83895 ,  H01L2224/83896

摘要： A semiconductor device includes a first adsorption layer, a first bonding layer, a second bonding layer, and a second adsorption layer stacked on a first substrate, and a conductive pattern structure penetrating through the first adsorption layer, the first bonding layer, the second bonding layer and the second adsorption layer. The first and second bonding layers are in contact with each other, and each of the first and second adsorption layers includes a low-κ dielectric material.