公开(公告)号：US11195927B2

公开(公告)日：2021-12-07

申请号：US16998493

申请日：2020-08-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wonkeun Chung ,  HeonBok Lee ,  Chunghwan Shin ,  Youngsuk Chai ,  Sangjin Hyun

IPC: H01L29/08 ,  H01L27/092 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66

Abstract: A semiconductor device includes a substrate having an active pattern therein, a gate electrode extending across the active pattern and a source/drain region on the active pattern laterally adjacent the gate electrode. The device further includes a contact structure including a first contact on the source/drain region, a second contact on the first contact and a spacer on sidewalls of the first and second contacts.