公开(公告)号：US20180331103A1

公开(公告)日：2018-11-15

申请号：US16017024

申请日：2018-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonkeun Chung ,  Gigwan Park ,  Huyong Lee ,  TaekSoo Jeon ,  Sangjin Hyun

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/423

CPC classification number: H01L27/0922 ,  H01L21/28114 ,  H01L21/82345 ,  H01L21/823821 ,  H01L21/823842 ,  H01L27/088 ,  H01L27/092 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/42364 ,  H01L29/42376 ,  H01L29/435 ,  H01L29/495 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/66795 ,  H01L29/785

Abstract: A semiconductor device includes a substrate having an active pattern thereon, a gate electrode intersecting the active pattern, and a spacer on a sidewall of the gate electrode. The gate electrode includes a first metal pattern adjacent to the active pattern. The first metal pattern has a first portion parallel to the sidewall and a second portion parallel to the substrate. A top surface of the first portion has a descent in a direction from the spacer towards the second portion.

公开(公告)号：US20170186746A1

公开(公告)日：2017-06-29

申请号：US15372876

申请日：2016-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonkeun Chung ,  Gigwan Park ,  Huyong Lee ,  TaekSoo Jeon ,  Sangjin Hyun

IPC: H01L27/092 ,  H01L29/423 ,  H01L29/06

CPC classification number: H01L27/0922 ,  H01L21/82345 ,  H01L21/823842 ,  H01L27/088 ,  H01L27/092 ,  H01L29/0649 ,  H01L29/42364 ,  H01L29/42376 ,  H01L29/435 ,  H01L29/495 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/785

Abstract: A semiconductor device includes a substrate having an active pattern thereon, a gate electrode intersecting the active pattern, and a spacer on a sidewall of the gate electrode. The gate electrode includes a first metal pattern adjacent to the active pattern. The first metal pattern has a first portion parallel to the sidewall and a second portion parallel to the substrate. A top surface of the first portion has a descent in a direction from the spacer towards the second portion.

公开(公告)号：US10468411B2

公开(公告)日：2019-11-05

申请号：US16017024

申请日：2018-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonkeun Chung ,  Gigwan Park ,  Huyong Lee ,  TaekSoo Jeon ,  Sangjin Hyun

IPC: H01L29/06 ,  H01L29/423 ,  H01L21/28 ,  H01L27/092 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/088 ,  H01L29/49 ,  H01L29/78 ,  H01L29/66 ,  H01L29/43

Abstract: A semiconductor device includes a substrate having an active pattern thereon, a gate electrode intersecting the active pattern, and a spacer on a sidewall of the gate electrode. The gate electrode includes a first metal pattern adjacent to the active pattern. The first metal pattern has a first portion parallel to the sidewall and a second portion parallel to the substrate. A top surface of the first portion has a descent in a direction from the spacer towards the second portion.

公开(公告)号：US10043803B2

公开(公告)日：2018-08-07

申请号：US15372876

申请日：2016-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonkeun Chung ,  Gigwan Park ,  Huyong Lee ,  TaekSoo Jeon ,  Sangjin Hyun

IPC: H01L29/06 ,  H01L29/43 ,  H01L29/49 ,  H01L27/092 ,  H01L29/423

Abstract: A semiconductor device includes a substrate having an active pattern thereon, a gate electrode intersecting the active pattern, and a spacer on a sidewall of the gate electrode. The gate electrode includes a first metal pattern adjacent to the active pattern. The first metal pattern has a first portion parallel to the sidewall and a second portion parallel to the substrate. A top surface of the first portion has a descent in a direction from the spacer towards the second portion.