公开(公告)号：US10468411B2

公开(公告)日：2019-11-05

申请号：US16017024

申请日：2018-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonkeun Chung ,  Gigwan Park ,  Huyong Lee ,  TaekSoo Jeon ,  Sangjin Hyun

IPC: H01L29/06 ,  H01L29/423 ,  H01L21/28 ,  H01L27/092 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/088 ,  H01L29/49 ,  H01L29/78 ,  H01L29/66 ,  H01L29/43

Abstract: A semiconductor device includes a substrate having an active pattern thereon, a gate electrode intersecting the active pattern, and a spacer on a sidewall of the gate electrode. The gate electrode includes a first metal pattern adjacent to the active pattern. The first metal pattern has a first portion parallel to the sidewall and a second portion parallel to the substrate. A top surface of the first portion has a descent in a direction from the spacer towards the second portion.

公开(公告)号：US10043803B2

公开(公告)日：2018-08-07

申请号：US15372876

申请日：2016-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonkeun Chung ,  Gigwan Park ,  Huyong Lee ,  TaekSoo Jeon ,  Sangjin Hyun

IPC: H01L29/06 ,  H01L29/43 ,  H01L29/49 ,  H01L27/092 ,  H01L29/423

Abstract: A semiconductor device includes a substrate having an active pattern thereon, a gate electrode intersecting the active pattern, and a spacer on a sidewall of the gate electrode. The gate electrode includes a first metal pattern adjacent to the active pattern. The first metal pattern has a first portion parallel to the sidewall and a second portion parallel to the substrate. A top surface of the first portion has a descent in a direction from the spacer towards the second portion.

公开(公告)号：US09627509B2

公开(公告)日：2017-04-18

申请号：US14802519

申请日：2015-07-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungbum Koo ,  Wandon Kim ,  Sangjin Hyun ,  Shinhye Kim ,  TaekSoo Jeon ,  Byung-Suk Jung

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/51 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L29/66545 ,  H01L21/02362 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L29/51 ,  H01L29/511 ,  H01L29/512 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66636 ,  H01L29/78 ,  H01L2029/7858

Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a substrate with an active pattern, a gate electrode provided at the active pattern, and a gate capping structure disposed above the gate electrode. The gate capping structure may include two or more gate capping patterns with different properties from each other, and the use of the gate capping structure makes it possible to form contact plugs in a self-aligned manner and improve operational speed and characteristics of the semiconductor device.

公开(公告)号：US20180331103A1

公开(公告)日：2018-11-15

申请号：US16017024

申请日：2018-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonkeun Chung ,  Gigwan Park ,  Huyong Lee ,  TaekSoo Jeon ,  Sangjin Hyun

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/423

CPC classification number: H01L27/0922 ,  H01L21/28114 ,  H01L21/82345 ,  H01L21/823821 ,  H01L21/823842 ,  H01L27/088 ,  H01L27/092 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/42364 ,  H01L29/42376 ,  H01L29/435 ,  H01L29/495 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/66795 ,  H01L29/785

Abstract: A semiconductor device includes a substrate having an active pattern thereon, a gate electrode intersecting the active pattern, and a spacer on a sidewall of the gate electrode. The gate electrode includes a first metal pattern adjacent to the active pattern. The first metal pattern has a first portion parallel to the sidewall and a second portion parallel to the substrate. A top surface of the first portion has a descent in a direction from the spacer towards the second portion.

公开(公告)号：US20170186746A1

公开(公告)日：2017-06-29

申请号：US15372876

申请日：2016-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonkeun Chung ,  Gigwan Park ,  Huyong Lee ,  TaekSoo Jeon ,  Sangjin Hyun

IPC: H01L27/092 ,  H01L29/423 ,  H01L29/06

CPC classification number: H01L27/0922 ,  H01L21/82345 ,  H01L21/823842 ,  H01L27/088 ,  H01L27/092 ,  H01L29/0649 ,  H01L29/42364 ,  H01L29/42376 ,  H01L29/435 ,  H01L29/495 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/785

Abstract: A semiconductor device includes a substrate having an active pattern thereon, a gate electrode intersecting the active pattern, and a spacer on a sidewall of the gate electrode. The gate electrode includes a first metal pattern adjacent to the active pattern. The first metal pattern has a first portion parallel to the sidewall and a second portion parallel to the substrate. A top surface of the first portion has a descent in a direction from the spacer towards the second portion.