公开(公告)号：US20220077295A1

公开(公告)日：2022-03-10

申请号：US17524259

申请日：2021-11-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wonkeun CHUNG ,  Heonbok Lee ,  Chunghwan Shin ,  Youngsuk Chai ,  Sangjin Hyun

IPC: H01L29/423 ,  H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L29/08

Abstract: A semiconductor device includes a substrate having an active pattern therein, a gate electrode extending across the active pattern and a source/drain region on the active pattern laterally adjacent the gate electrode. The device further includes a contact structure including a first contact on the source/drain region, a second contact on the first contact and a spacer on sidewalls of the first and second contacts.

公开(公告)号：US10763335B2

公开(公告)日：2020-09-01

申请号：US16203197

申请日：2018-11-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonkeun Chung ,  Heonbok Lee ,  Chunghwan Shin ,  Youngsuk Chai ,  Sangjin Hyun

IPC: H01L29/423 ,  H01L29/08 ,  H01L27/092 ,  H01L29/78 ,  H01L29/66

Abstract: A semiconductor device includes a substrate having an active pattern therein, a gate electrode extending across the active pattern and a source/drain region on the active pattern laterally adjacent the gate electrode. The device further includes a contact structure including a first contact on the source/drain region, a second contact on the first contact and a spacer on sidewalls of the first and second contacts.

公开(公告)号：US11626499B2

公开(公告)日：2023-04-11

申请号：US17524259

申请日：2021-11-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wonkeun Chung ,  Heonbok Lee ,  Chunghwan Shin ,  Youngsuk Chai ,  Sangjin Hyun

IPC: H01L29/08 ,  H01L27/092 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66

Abstract: A semiconductor device includes a substrate having an active pattern therein, a gate electrode extending across the active pattern and a source/drain region on the active pattern laterally adjacent the gate electrode. The device further includes a contact structure including a first contact on the source/drain region, a second contact on the first contact and a spacer on sidewalls of the first and second contacts.

公开(公告)号：US11195927B2

公开(公告)日：2021-12-07

申请号：US16998493

申请日：2020-08-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wonkeun Chung ,  HeonBok Lee ,  Chunghwan Shin ,  Youngsuk Chai ,  Sangjin Hyun

IPC: H01L29/08 ,  H01L27/092 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66

Abstract: A semiconductor device includes a substrate having an active pattern therein, a gate electrode extending across the active pattern and a source/drain region on the active pattern laterally adjacent the gate electrode. The device further includes a contact structure including a first contact on the source/drain region, a second contact on the first contact and a spacer on sidewalls of the first and second contacts.