公开(公告)号：US20220077295A1

公开(公告)日：2022-03-10

申请号：US17524259

申请日：2021-11-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wonkeun CHUNG ,  Heonbok Lee ,  Chunghwan Shin ,  Youngsuk Chai ,  Sangjin Hyun

IPC: H01L29/423 ,  H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L29/08

Abstract: A semiconductor device includes a substrate having an active pattern therein, a gate electrode extending across the active pattern and a source/drain region on the active pattern laterally adjacent the gate electrode. The device further includes a contact structure including a first contact on the source/drain region, a second contact on the first contact and a spacer on sidewalls of the first and second contacts.

公开(公告)号：US11626499B2

公开(公告)日：2023-04-11

申请号：US17524259

申请日：2021-11-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wonkeun Chung ,  Heonbok Lee ,  Chunghwan Shin ,  Youngsuk Chai ,  Sangjin Hyun

IPC: H01L29/08 ,  H01L27/092 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66

Abstract: A semiconductor device includes a substrate having an active pattern therein, a gate electrode extending across the active pattern and a source/drain region on the active pattern laterally adjacent the gate electrode. The device further includes a contact structure including a first contact on the source/drain region, a second contact on the first contact and a spacer on sidewalls of the first and second contacts.

公开(公告)号：US20240145387A1

公开(公告)日：2024-05-02

申请号：US18329784

申请日：2023-06-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaemoon Lee ,  Jeongik Kim ,  Sungyu Choi ,  Rakhwan Kim ,  Chunghwan Shin

IPC: H01L23/528 ,  H01L23/522 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L23/5283 ,  H01L23/5226 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696 ,  H01L29/66545

Abstract: A semiconductor device includes a gate structure disposed on a substrate and a contact plug. The contact plug includes a first conductive pattern contacting an upper surface of the first gate structure and a second conductive pattern contacting an upper surface of the first conductive pattern. An upper surface of a central portion of the first conductive pattern is higher than an upper surface of an edge portion of the first conductive pattern. A lower surface of a central portion of the second conductive pattern is higher than a lower surface of an edge portion of the second conductive pattern.

公开(公告)号：US10763335B2

公开(公告)日：2020-09-01

申请号：US16203197

申请日：2018-11-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonkeun Chung ,  Heonbok Lee ,  Chunghwan Shin ,  Youngsuk Chai ,  Sangjin Hyun

IPC: H01L29/423 ,  H01L29/08 ,  H01L27/092 ,  H01L29/78 ,  H01L29/66

Abstract: A semiconductor device includes a substrate having an active pattern therein, a gate electrode extending across the active pattern and a source/drain region on the active pattern laterally adjacent the gate electrode. The device further includes a contact structure including a first contact on the source/drain region, a second contact on the first contact and a spacer on sidewalls of the first and second contacts.

公开(公告)号：US20230215930A1

公开(公告)日：2023-07-06

申请号：US17901054

申请日：2022-09-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： WONKEUN CHUNG ,  Byungchul Kang ,  Hongkeun Park ,  Hoonjoo Na ,  Chunghwan Shin

IPC: H01L29/45 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L29/775 ,  H01L29/40 ,  H01L29/66 ,  H01L21/8238 ,  H01L23/528

CPC classification number: H01L29/45 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823871 ,  H01L23/5286 ,  H01L27/092 ,  H01L29/401 ,  H01L29/0673 ,  H01L29/775 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66742 ,  H01L29/78696

Abstract: A semiconductor device includes a substrate that includes an active pattern, a channel pattern and a source/drain pattern on the active pattern, a gate electrode on the channel pattern, an active contact electrically connected to the source/drain pattern, and a gate contact electrically connected to the gate electrode. The active contact includes a first barrier pattern, a first seed pattern on the first barrier pattern, a first fill pattern on the first seed pattern, and a first metal-containing pattern between the first seed pattern and the first fill pattern. The first metal-containing pattern includes tungsten nitride. A nitrogen concentration of the first metal-containing pattern decreases in a direction toward the substrate.

公开(公告)号：US11195927B2

公开(公告)日：2021-12-07

申请号：US16998493

申请日：2020-08-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wonkeun Chung ,  HeonBok Lee ,  Chunghwan Shin ,  Youngsuk Chai ,  Sangjin Hyun

IPC: H01L29/08 ,  H01L27/092 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66

Abstract: A semiconductor device includes a substrate having an active pattern therein, a gate electrode extending across the active pattern and a source/drain region on the active pattern laterally adjacent the gate electrode. The device further includes a contact structure including a first contact on the source/drain region, a second contact on the first contact and a spacer on sidewalls of the first and second contacts.