公开(公告)号：US20230215930A1

公开(公告)日：2023-07-06

申请号：US17901054

申请日：2022-09-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： WONKEUN CHUNG ,  Byungchul Kang ,  Hongkeun Park ,  Hoonjoo Na ,  Chunghwan Shin

IPC: H01L29/45 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L29/775 ,  H01L29/40 ,  H01L29/66 ,  H01L21/8238 ,  H01L23/528

CPC classification number: H01L29/45 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823871 ,  H01L23/5286 ,  H01L27/092 ,  H01L29/401 ,  H01L29/0673 ,  H01L29/775 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66742 ,  H01L29/78696

Abstract: A semiconductor device includes a substrate that includes an active pattern, a channel pattern and a source/drain pattern on the active pattern, a gate electrode on the channel pattern, an active contact electrically connected to the source/drain pattern, and a gate contact electrically connected to the gate electrode. The active contact includes a first barrier pattern, a first seed pattern on the first barrier pattern, a first fill pattern on the first seed pattern, and a first metal-containing pattern between the first seed pattern and the first fill pattern. The first metal-containing pattern includes tungsten nitride. A nitrogen concentration of the first metal-containing pattern decreases in a direction toward the substrate.