公开(公告)号：US10403717B2

公开(公告)日：2019-09-03

申请号：US15686838

申请日：2017-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Do-Sun Lee ,  Chang-Woo Sohn ,  Chul-Sung Kim ,  Shigenobu Maeda ,  Young-Moon Choi ,  Hyo-Seok Choi ,  Sang-Jin Hyun

IPC: H01L29/08 ,  H01L29/06 ,  H01L29/161 ,  H01L29/165 ,  H01L29/78 ,  H01L29/417

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate. The semiconductor device includes an isolation layer defining active portions of the substrate that are spaced apart from each other in a direction. The semiconductor device includes an epitaxial layer on the active portions. The semiconductor device includes a metal silicide layer on the epitaxial layer. Moreover, the semiconductor device includes a contact structure that only partially overlaps the metal silicide layer on the epitaxial layer. Related methods of forming semiconductor devices are also provided.

公开(公告)号：US09728601B2

公开(公告)日：2017-08-08

申请号：US15058466

申请日：2016-03-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Woo Kim ,  Shigenobu Maeda ,  Young-Moon Choi ,  Yong-Bum Kwon ,  Chang-Woo Sohn ,  Do-Sun Lee

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L27/092 ,  H01L27/088 ,  H01L21/8238

CPC classification number: H01L21/823431 ,  H01L21/823418 ,  H01L21/823814 ,  H01L21/823821 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/785

Abstract: Semiconductor devices may include a plurality of active fins each extending in a first direction on a substrate, a gate structure extending on the active fins in a second direction, and a first source/drain layer on first active fins of the active fins adjacent the gate structure. At least one of two opposing sidewalls of a cross-section of the first source/drain layer taken along the second direction may include a curved portion having a slope with respect to an upper surface of the substrate. The slope may decrease from a bottom toward a top thereof.

公开(公告)号：US20170352728A1

公开(公告)日：2017-12-07

申请号：US15686838

申请日：2017-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Do-Sun Lee ,  Chang-Woo Sohn ,  Chul-Sung Kim ,  Shigenobu Maeda ,  Young-Moon Choi ,  Hyo-Seok Choi ,  Sang-Jin Hyun

IPC: H01L29/08 ,  H01L29/417 ,  H01L29/165 ,  H01L29/161 ,  H01L29/78 ,  H01L29/06

CPC classification number: H01L29/0847 ,  H01L29/0653 ,  H01L29/161 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/7848 ,  H01L29/785

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate. The semiconductor device includes an isolation layer defining active portions of the substrate that are spaced apart from each other in a direction. The semiconductor device includes an epitaxial layer on the active portions. The semiconductor device includes a metal silicide layer on the epitaxial layer. Moreover, the semiconductor device includes a contact structure that only partially overlaps the metal silicide layer on the epitaxial layer. Related methods of forming semiconductor devices are also provided.

公开(公告)号：US10242917B2

公开(公告)日：2019-03-26

申请号：US15634343

申请日：2017-06-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Woo Kim ,  Shigenobu Maeda ,  Young-Moon Choi ,  Yong-Bum Kwon ,  Chang-Woo Sohn ,  Do-Sun Lee

IPC: H01L21/8234 ,  H01L29/06 ,  H01L29/78 ,  H01L27/088 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L27/092 ,  H01L29/66 ,  H01L21/8238

Abstract: Semiconductor devices may include a plurality of active fins each extending in a first direction on a substrate, a gate structure extending on the active fins in a second direction, and a first source/drain layer on first active fins of the active fins adjacent the gate structure. At least one of two opposing sidewalls of a cross-section of the first source/drain layer taken along the second direction may include a curved portion having a slope with respect to an upper surface of the substrate. The slope may decrease from a bottom toward a top thereof.

公开(公告)号：US20170294355A1

公开(公告)日：2017-10-12

申请号：US15634343

申请日：2017-06-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Woo KIM ,  Shigenobu Maeda ,  Young-Moon Choi ,  Yong-Bum Kwon ,  Chang-Woo Sohn ,  Do-Sun Lee

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/66

CPC classification number: H01L21/823431 ,  H01L21/823418 ,  H01L21/823814 ,  H01L21/823821 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/785

Abstract: Semiconductor devices may include a plurality of active fins each extending in a first direction on a substrate, a gate structure extending on the active fins in a second direction, and a first source/drain layer on first active fins of the active fins adjacent the gate structure. At least one of two opposing sidewalls of a cross-section of the first source/drain layer taken along the second direction may include a curved portion having a slope with respect to an upper surface of the substrate. The slope may decrease from a bottom toward a top thereof.