Etchant composition and methods of fabricating metal wiring and thin film transistor substrate using the same
    2.
    发明授权
    Etchant composition and methods of fabricating metal wiring and thin film transistor substrate using the same 有权
    蚀刻剂组成和制造金属布线的方法和使用其的薄膜晶体管基板

    公开(公告)号:US09136137B2

    公开(公告)日:2015-09-15

    申请号:US14263956

    申请日:2014-04-28

    Abstract: An etchant composition including 0.5 wt % to 20 wt % of a persulfate, 0.01 wt % to 1 wt % of a fluorine compound, 1 wt % to 10 wt % of an inorganic acid, 0.01 wt % to 2 wt % of an azole-based compound, 0.1 wt % to 5 wt % of a chlorine compound, 0.05 wt % to 3 wt % of a copper salt, 0.01 wt % to 5 wt % of an antioxidant or a salt thereof, based on a total weight of the etchant composition, and water in an amount sufficient for the total weight of the etchant composition to be equal to 100 wt % is disclosed. The etchant composition is suitable for use in forming a metal wiring by etching a metal layer including copper or in fabricating a thin film transistor substrate for a display apparatus.

    Abstract translation: 包含0.5重量%至20重量%的过硫酸盐,0.01重量%至1重量%的氟化合物,1重量%至10重量%的无机酸,0.01重量%至2重量%的唑类, 0.1重量%至5重量%的氯化合物,0.05重量%至3重量%的铜盐,0.01重量%至5重量%的抗氧化剂或其盐,基于蚀刻剂的总重量 组合物和水的量足以使蚀刻剂组合物的总重量等于100重量%。 蚀刻剂组合物适用于通过蚀刻包括铜的金属层或制造用于显示装置的薄膜晶体管基板来形成金属布线。

    Display device having input sensor and fabricating method of the input sensor

    公开(公告)号:US11600670B2

    公开(公告)日:2023-03-07

    申请号:US17444274

    申请日:2021-08-02

    Abstract: An input sensor of a display device includes: a sensing electrode on a base insulating layer and overlapping a sensing region; and a signal line electrically connected to the sensing electrode and overlapping the non-sensing region, and including: a first conductive layer on the base insulating layer and having a first reflectance, a first conductivity, and a first thickness; a second conductive layer having a second reflectance lower than the first reflectance, a second conductivity lower than the first conductivity, and a second thickness smaller than the first thickness, wherein the second conductive layer is on and in contact with the first conductive layer; and a third conductive layer between the base insulating layer and the first conductive layer, in contact with each of the base insulating layer and the first conductive layer, wherein the third conductive layer contains a material different from that of the second conductive layer.

    Manufacturing method of display device

    公开(公告)号:US11594561B2

    公开(公告)日:2023-02-28

    申请号:US17074947

    申请日:2020-10-20

    Abstract: A method of manufacturing a display device in a chamber in which a material including yttrium is coated on an inner surface includes: forming a first layer pattern by dry etching on a substrate; depositing a second layer material on the first layer pattern; forming a photoresist pattern on the second layer material; completing a second layer pattern by using the photoresist pattern as an etch mask; and performing an additional acid etching process by using an etching solution including at least one of hydrochloric acid, sulfuric acid, or nitric acid before the forming of the photoresist pattern on the second layer material after the dry etching to form the first layer pattern.

    ETCHANT COMPOSITION AND METHODS OF FABRICATING METAL WIRING AND THIN FILM TRANSISTOR SUBSTRATE USING THE SAME
    9.
    发明申请
    ETCHANT COMPOSITION AND METHODS OF FABRICATING METAL WIRING AND THIN FILM TRANSISTOR SUBSTRATE USING THE SAME 有权
    使用其制造金属接线和薄膜晶体管基板的蚀刻组合物和方法

    公开(公告)号:US20150087148A1

    公开(公告)日:2015-03-26

    申请号:US14263956

    申请日:2014-04-28

    Abstract: An etchant composition including 0.5 wt % to 20 wt % of a persulfate, 0.01 wt % to 1 wt % of a fluorine compound, 1 wt % to 10 wt % of an inorganic acid, 0.01 wt % to 2 wt % of an azole-based compound, 0.1 wt % to 5 wt % of a chlorine compound, 0.05 wt % to 3 wt % of a copper salt, 0.01 wt % to 5 wt % of an antioxidant or a salt thereof, based on a total weight of the etchant composition, and water in an amount sufficient for the total weight of the etchant composition to be equal to 100 wt % is disclosed. The etchant composition is suitable for use in forming a metal wiring by etching a metal layer including copper or in fabricating a thin film transistor substrate for a display apparatus.

    Abstract translation: 包含0.5重量%至20重量%的过硫酸盐,0.01重量%至1重量%的氟化合物,1重量%至10重量%的无机酸,0.01重量%至2重量%的唑类, 0.1重量%至5重量%的氯化合物,0.05重量%至3重量%的铜盐,0.01重量%至5重量%的抗氧化剂或其盐,基于蚀刻剂的总重量 组合物和水的量足以使蚀刻剂组合物的总重量等于100重量%。 蚀刻剂组合物适用于通过蚀刻包括铜的金属层或制造用于显示装置的薄膜晶体管基板来形成金属布线。

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