公开(公告)号：US20150087148A1

公开(公告)日：2015-03-26

申请号：US14263956

申请日：2014-04-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： In-Bae Kim ,  Jong-Hyun Choung ,  Youngmin Moon ,  Hongsick Park ,  Gyu-po Kim ,  Won-guk Seo ,  Hyun-cheol Shin ,  Ki-beom Lee ,  Sam-young Cho ,  Seung-yeon Han

IPC: H01L21/306 ,  C23F1/18

CPC classification number: H01L21/30604 ,  C23F1/18 ,  H01L21/32134 ,  H01L27/124 ,  H01L29/45

Abstract: An etchant composition including 0.5 wt % to 20 wt % of a persulfate, 0.01 wt % to 1 wt % of a fluorine compound, 1 wt % to 10 wt % of an inorganic acid, 0.01 wt % to 2 wt % of an azole-based compound, 0.1 wt % to 5 wt % of a chlorine compound, 0.05 wt % to 3 wt % of a copper salt, 0.01 wt % to 5 wt % of an antioxidant or a salt thereof, based on a total weight of the etchant composition, and water in an amount sufficient for the total weight of the etchant composition to be equal to 100 wt % is disclosed. The etchant composition is suitable for use in forming a metal wiring by etching a metal layer including copper or in fabricating a thin film transistor substrate for a display apparatus.

Abstract translation: 包含0.5重量％至20重量％的过硫酸盐，0.01重量％至1重量％的氟化合物，1重量％至10重量％的无机酸，0.01重量％至2重量％的唑类， 0.1重量％至5重量％的氯化合物，0.05重量％至3重量％的铜盐，0.01重量％至5重量％的抗氧化剂或其盐，基于蚀刻剂的总重量 组合物和水的量足以使蚀刻剂组合物的总重量等于100重量％。 蚀刻剂组合物适用于通过蚀刻包括铜的金属层或制造用于显示装置的薄膜晶体管基板来形成金属布线。

公开(公告)号：US09136137B2

公开(公告)日：2015-09-15

申请号：US14263956

申请日：2014-04-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： In-Bae Kim ,  Jong-Hyun Choung ,  Youngmin Moon ,  Hongsick Park ,  Gyu-po Kim ,  Won-guk Seo ,  Hyun-cheol Shin ,  Ki-beom Lee ,  Sam-young Cho ,  Seung-yeon Han

IPC: H01L21/44 ,  H01L21/306 ,  C23F1/18

CPC classification number: H01L21/30604 ,  C23F1/18 ,  H01L21/32134 ,  H01L27/124 ,  H01L29/45

Abstract: An etchant composition including 0.5 wt % to 20 wt % of a persulfate, 0.01 wt % to 1 wt % of a fluorine compound, 1 wt % to 10 wt % of an inorganic acid, 0.01 wt % to 2 wt % of an azole-based compound, 0.1 wt % to 5 wt % of a chlorine compound, 0.05 wt % to 3 wt % of a copper salt, 0.01 wt % to 5 wt % of an antioxidant or a salt thereof, based on a total weight of the etchant composition, and water in an amount sufficient for the total weight of the etchant composition to be equal to 100 wt % is disclosed. The etchant composition is suitable for use in forming a metal wiring by etching a metal layer including copper or in fabricating a thin film transistor substrate for a display apparatus.

Abstract translation: 包含0.5重量％至20重量％的过硫酸盐，0.01重量％至1重量％的氟化合物，1重量％至10重量％的无机酸，0.01重量％至2重量％的唑类， 0.1重量％至5重量％的氯化合物，0.05重量％至3重量％的铜盐，0.01重量％至5重量％的抗氧化剂或其盐，基于蚀刻剂的总重量 组合物和水的量足以使蚀刻剂组合物的总重量等于100重量％。 蚀刻剂组合物适用于通过蚀刻包括铜的金属层或制造用于显示装置的薄膜晶体管基板来形成金属布线。