公开(公告)号：US12142645B2

公开(公告)日：2024-11-12

申请号：US18205886

申请日：2023-06-05

Applicant: SUMCO CORPORATION

Inventor： Kazuhisa Torigoe ,  Toshiaki Ono ,  Shunya Kawaguchi

IPC: C30B33/02 ,  C30B15/20 ,  C30B29/06 ,  H01L21/322 ,  H01L21/324 ,  H01L29/32

Abstract: A silicon wafer having a layer of oxygen precipitates and method of manufacturing thereof wherein the wafer exhibiting robustness characterized as having a ratio of a first average density from a first treatment that to a second average density from a second treatment is between 0.74 to 1.02, wherein the first treatment includes heating the wafer or a portion of the wafer at about 1150° C. for about 2 minutes and then between about 950 to 1000° C. for about 16 hours, and the second treatment includes heating the wafer or a portion of the wafer at about 780° C. for about 3 hours and then between about 950 to 1000° C. for about 16 hours. The wafer exhibits heretofore unattainable uniformity wherein a ratio of an oxygen precipitate density determined from any one cubic centimeter in the BMD layer of the wafer to another oxygen precipitate density from any other one cubic centimeter in the BMD layer of the wafer is in a range of 0.77 to 1.30.

公开(公告)号：US11121003B2

公开(公告)日：2021-09-14

申请号：US16621219

申请日：2018-06-12

Applicant: SUMCO Corporation

Inventor： Kazuhisa Torigoe ,  Shigeru Umeno ,  Toshiaki Ono

IPC: C30B33/02 ,  H01L21/322 ,  C30B29/06

Abstract: Provided is a method of accurately predicting the thermal donor formation behavior in a silicon wafer, a method of evaluating a silicon wafer using the prediction method, and a method of producing a silicon wafer using the evaluation method. The method of predicting the formation behavior of thermal donors, includes: a first step of setting an initial oxygen concentration condition before performing heat treatment on the silicon wafer for reaction rate equations based on both a bond-dissociation model of oxygen clusters associated with the diffusion of interstitial oxygen and a bonding model of oxygen clusters associated with the diffusion of oxygen dimers; a second step of calculating the formation rate of oxygen clusters formed through the heat treatment using the reaction rate equations; and a third step of calculating the formation rate of thermal donors formed through the heat treatment based on the formation rate of the oxygen clusters.

公开(公告)号：US11888036B2

公开(公告)日：2024-01-30

申请号：US17848919

申请日：2022-06-24

Applicant: SUMCO CORPORATION

Inventor： Kazuya Kodani ,  Toshiaki Ono ,  Kazuhisa Torigoe

IPC: H01L29/16 ,  H01L29/34 ,  H01L21/02

CPC classification number: H01L29/34 ,  H01L29/16 ,  H01L21/0257

Abstract: A manufacturing method of an epitaxial silicon wafer includes forming an epitaxial film made of silicon on a surface of a silicon wafer in a trichlorosilane gas atmosphere; and setting the nitrogen concentration of the surface of the epitaxial film through inward diffusion from a nitride film on the epitaxial film, the nitride film being formed by subjecting the silicon wafer provided with the epitaxial film to heat treatment in a nitrogen atmosphere.

公开(公告)号：US10861990B2

公开(公告)日：2020-12-08

申请号：US16583732

申请日：2019-09-26

Applicant: SUMCO CORPORATION

Inventor： Kazuhisa Torigoe ,  Toshiaki Ono

IPC: H01L31/0288 ,  C30B29/06 ,  C30B30/04 ,  C30B15/30 ,  C30B15/20 ,  C30B25/18 ,  C30B33/02 ,  H01L21/322 ,  H01L27/146 ,  H01L21/02

Abstract: A method of manufacturing an epitaxial silicon wafer that includes growing a silicon single crystal ingot doped with a boron concentration of 2.7×1017 atoms/cm3 or more and 1.3×1019 atoms/cm3 or less by the CZ method; producing a silicon substrate by processing the silicon single crystal ingot; and forming an epitaxial layer on a surface of the silicon substrate. During growing of the silicon single crystal ingot, the pull-up conditions of the silicon single crystal ingot are controlled so that the boron concentration Y (atoms/cm3) and an initial oxygen concentration X (×1017 atoms/cm3) satisfy the expression X≤−4.3×10−19Y+16.3.

公开(公告)号：US11695048B2

公开(公告)日：2023-07-04

申请号：US17225422

申请日：2021-04-08

Applicant: SUMCO CORPORATION

Inventor： Kazuhisa Torigoe ,  Toshiaki Ono ,  Shunya Kawaguchi

IPC: C30B33/02 ,  H01L29/32 ,  H01L21/324 ,  C30B15/20 ,  H01L21/322 ,  C30B29/06

CPC classification number: H01L29/32 ,  C30B15/203 ,  C30B29/06 ,  C30B33/02 ,  H01L21/324 ,  H01L21/3225

Abstract: A silicon wafer having a layer of oxygen precipitates and method of manufacturing thereof wherein the wafer exhibiting robustness characterized as having a ratio of a first average density from a first treatment that to a second average density from a second treatment is between 0.74 to 1.02, wherein the first treatment includes heating the wafer or a portion of the wafer at about 1150° C. for about 2 minutes and then between about 950 to 1000° C. for about 16 hours, and the second treatment includes heating the wafer or a portion of the wafer at about 780° C. for about 3 hours and then between about 950 to 1000° C. for about 16 hours. The wafer exhibits heretofore unattainable uniformity wherein a ratio of an oxygen precipitate density determined from any one cubic centimeter in the BMD layer of the wafer to another oxygen precipitate density from any other one cubic centimeter in the BMD layer of the wafer is in a range of 0.77 to 1.30.

公开(公告)号：US09818609B2

公开(公告)日：2017-11-14

申请号：US15120630

申请日：2014-12-19

Applicant: SUMCO CORPORATION

Inventor： Kazuhisa Torigoe ,  Toshiaki Ono

IPC: H01L21/02 ,  C23C16/24 ,  C30B25/20 ,  H01L21/324 ,  C30B25/18 ,  C30B29/06 ,  C30B33/02 ,  H01L29/10 ,  H01L29/32

CPC classification number: H01L21/02694 ,  C23C16/24 ,  C30B25/186 ,  C30B25/20 ,  C30B29/06 ,  C30B33/02 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/324 ,  H01L29/1083 ,  H01L29/32

Abstract: A manufacturing method of an epitaxial silicon wafer including a silicon wafer doped with boron and having a resistivity of 100 mΩ·cm or less and an epitaxial film formed on the silicon wafer includes: growing the epitaxial film on the silicon wafer; and applying a heat treatment on the epitaxial silicon wafer at a temperature of less than 900 degrees C.

公开(公告)号：US09281216B2

公开(公告)日：2016-03-08

申请号：US14754762

申请日：2015-06-30

Applicant: SUMCO CORPORATION

Inventor： Kazuhisa Torigoe ,  Toshiaki Ono

IPC: H01L21/322 ,  H01L21/02 ,  C30B25/10 ,  H01L21/20 ,  C30B25/02

CPC classification number: H01L21/3221 ,  C30B25/02 ,  C30B25/10 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/20 ,  H01L21/3225

Abstract: A manufacturing method of an epitaxial silicon wafer includes: an epitaxial-film-growth step in which an epitaxial film is grown on a silicon wafer in a reaction container, and a temperature reduction step in which a temperature of the epitaxial silicon wafer is reduced from a temperature at which the epitaxial film is grown. In the temperature reduction step, a temperature reduction rate of the epitaxial silicon wafer is controlled to satisfy a relationship represented by R≦2.0×10-4X−2.9, where X (Ω·cm) represents a resistivity of the silicon wafer, and R (degrees C./min) represents the temperature reduction rate for lowing the temperature of the epitaxial silicon wafer from 500 degrees C. to 400 degrees C.

Abstract translation: 外延硅晶片的制造方法包括：外延膜生长步骤，其中外延膜在反应容器中的硅晶片上生长，以及降温步骤，其中外延硅晶片的温度从 外延膜生长的温度。 在温度降低步骤中，控制外延硅晶片的温度降低率，以满足由R＆lt; llE; 2.0×10-4X-2.9表示的关系，其中X（＆OHgr;·cm）表示硅晶片的电阻率， R（℃/ min）表示将外延硅晶片的温度从500摄氏度降低到400摄氏度的温度降低率。