公开(公告)号：US20200185219A1

公开(公告)日：2020-06-11

申请号：US16349918

申请日：2017-11-29

Applicant: STC.UNM

Inventor： Tito Busani ,  Steven R.J. Brueck ,  Daniel Feezell ,  Mahmoud Behzadirad

IPC: H01L21/02 ,  G01Q60/38 ,  G01Q70/12

Abstract: Nanowires that may be utilized in microscopy, for example atomic force microscopy (AFM), as part of an AFM probe, as well as for other uses, are disclosed. The nanowires may be formed from a Group III nitride such as an epitaxial layer that may be or include gallium nitride, indium nitride, aluminum nitride, and an alloy of these materials. During use of the AFM probe to measure a topography of a test sample surface, the nanowire can activated and caused to lase and emit a light, thereby illuminating the surface with the light. In an implementation, the light can be collected by the AFM probe itself, for example through an optical fiber to which the nanowire is attached.

公开(公告)号：US20200006597A1

公开(公告)日：2020-01-02

申请号：US16567535

申请日：2019-09-11

Applicant: STC.UNM

Inventor： Steven R.J. Brueck ,  Seung-Chang Lee ,  Christian Wetzel ,  Mark Durniak

IPC: H01L33/32 ,  H01L21/02 ,  H01L21/78 ,  H01L33/00 ,  H01L33/04 ,  H01L33/18 ,  H01L29/04

Abstract: A method of forming a semiconductor structure includes providing a substrate comprising a first material portion and a single crystal silicon layer on the first material portion. The substrate further comprises a major front surface, a major backside surface opposing the major front surface, and a plurality of grooves positioned in the major front surface. A buffer layer is deposited in one or more of the plurality of grooves. A semiconductor material is epitaxially grown over the buffer layer and in the one or more plurality of grooves, the epitaxially grown semiconductor material comprising a hexagonal crystalline phase layer and a cubic crystalline phase structure disposed over the hexagonal crystalline phase.

公开(公告)号：US20200212198A1

公开(公告)日：2020-07-02

申请号：US16746853

申请日：2020-01-18

Applicant: STC.UNM

Inventor： Steven R.J. Brueck ,  Stephen D. Hersee ,  Seung-Chang Lee ,  Daniel Feezell

IPC: H01L29/66 ,  H01L29/06 ,  B82Y40/00 ,  H01L21/02 ,  H01L29/78 ,  H01L29/16 ,  H01L29/775 ,  B82Y10/00 ,  H01L29/04 ,  H01L29/778 ,  H01L29/20

Abstract: A method for making a heteroepitaxial layer. The method comprises providing a semiconductor substrate. A seed area delineated with a selective growth mask is formed on the semiconductor substrate. The seed area comprises a first material and has a linear surface dimension of less than 100 nm. A heteroepitaxial layer is grown on the seed area, the heteroepitaxial layer comprising a second material that is different from the first material. Devices made by the method are also disclosed.

公开(公告)号：US20190103481A1

公开(公告)日：2019-04-04

申请号：US16191197

申请日：2018-11-14

Applicant: STC.UNM

Inventor： Steven R.J. Brueck ,  Seung-Chang Lee ,  Christian Wetzel ,  Mark Durniak

IPC: H01L29/778 ,  H01L29/78 ,  H01L29/08 ,  H01L29/06 ,  H01L21/02 ,  H01S5/32 ,  H01L29/04 ,  H01L29/66 ,  H01L29/423 ,  H01L29/205 ,  H01S5/343 ,  H01L33/00 ,  H01S5/02 ,  H01L33/24 ,  H01L29/40 ,  H01S5/227 ,  H01S5/22 ,  H01L33/32

Abstract: A transistor comprises a substrate comprising a Group III/V compound semiconductor material having a cubic crystalline phase structure positioned on a hexagonal crystalline phase layer having a first region and a second region, the cubic crystalline phase structure being positioned between the first region and the second region of the hexagonal crystalline phase layer. A source region and a drain region are both positioned in the Group III/V compound semiconductor material. A channel region is in the Group III/V compound semiconductor material. A gate is over the channel region. An optional backside contact can also be formed. A source contact and electrode are positioned to provide electrical contact to the source region. A drain contact and electrode are positioned to provide electrical contact to the drain region. Methods of forming transistors are also disclosed.

公开(公告)号：US20170256405A1

公开(公告)日：2017-09-07

申请号：US15599376

申请日：2017-05-18

Applicant: STC.UNM

Inventor： Seung-Chang Lee ,  Steven R.J. Brueck

IPC: H01L21/02 ,  H01L29/267

CPC classification number: H01L21/02513 ,  C30B7/005 ,  C30B23/025 ,  C30B25/04 ,  C30B25/18 ,  C30B25/183 ,  C30B29/40 ,  C30B29/42 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02455 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02538 ,  H01L21/02546 ,  H01L21/02636 ,  H01L21/02642 ,  H01L21/02647 ,  H01L29/0665 ,  H01L29/0688 ,  H01L29/267

Abstract: Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially- single- particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.

公开(公告)号：US20170247754A1

公开(公告)日：2017-08-31

申请号：US15443138

申请日：2017-02-27

Applicant: STC.UNM

Inventor： Jeremy Edwards ,  Payman Zarkesh-Ha ,  Steven R.J. Brueck

IPC: C12Q1/68

CPC classification number: C12Q1/6869 ,  C12Q1/6806 ,  C12Q1/6874 ,  G01N27/414 ,  G01N27/4145 ,  Y10T436/143333 ,  C12Q2531/125 ,  C12Q2535/122

Abstract: This disclosure describes, in one aspect, a method for preparing DNA molecule for sequencing. Generally, the method includes fragmenting the DNA molecule into double-stranded fragments; amplifying at least a portion of the double-stranded fragments; circularizing the fragments so that the first end of the fragment comprises a first loop connecting the strands and the second end of the fragment comprises a second loop connecting the strands; annealing a first sequencing primer to the first loop oriented to sequence at least a portion of one strand of the fragment; and annealing a second sequencing primer to the second loop oriented to sequence at least a portion of the other strand of the fragment. In another aspect, this disclosure describes a method for sequencing a DNA molecule. Generally, the method includes fragmenting the DNA molecule into double-stranded fragments; amplifying at least a portion of the double-stranded fragments; circularizing the fragments so that the first end of the fragment comprises a first loop connecting the strands and the second end of the fragment comprises a second loop connecting the strands; and sequencing at least one of the DNA strands.

公开(公告)号：US20140234981A1

公开(公告)日：2014-08-21

申请号：US14347713

申请日：2012-09-28

Applicant: STC.UNM

Inventor： Payman Zarkesh-Ha ,  Steven R.J. Brueck ,  Jeremy Edwards

IPC: G01N27/414

CPC classification number: C12Q1/6869 ,  C12Q1/6806 ,  C12Q1/6874 ,  G01N27/414 ,  G01N27/4145 ,  Y10T436/143333 ,  C12Q2531/125 ,  C12Q2535/122

Abstract: Devices that include a substrate; a source region and a drain region formed within the substrate and having a channel region provided therebetween; a first insulating layer formed over the channel region; a first floating gate formed over the first insulating layer, the first floating gate configured to respond to an analyte in a target material; and a second gate formed over the first floating gate, the second gate capacatively coupled but not electrically connected to the first floating gate.

Abstract translation: 包括基板的装置; 源极区域和漏极区域，形成在所述衬底内并且在其间设置有沟道区域; 形成在所述沟道区上的第一绝缘层; 形成在所述第一绝缘层上的第一浮动栅极，所述第一浮置栅极被配置为响应目标材料中的分析物; 以及形成在所述第一浮动栅极上的第二栅极，所述第二栅极电容耦合但不电连接到所述第一浮动栅极。

公开(公告)号：US20180358226A1

公开(公告)日：2018-12-13

申请号：US15573772

申请日：2016-05-13

Applicant: STC.UNM

Inventor： Seung-Chang Lee ,  Steven R.J. Brueck

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/306 ,  H01L21/285 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L21/02664 ,  B81C1/00111 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02236 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02546 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L21/2855 ,  H01L21/30608 ,  H01L21/31116 ,  H01L21/823807 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66742 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78696

Abstract: Provided is a method for growing a nanowire, including: providing a substrate with a base portion having a first surface and at least one support structure extending above or below the first surface; forming a dielectric coating on the at least one support structure; forming a photoresist coating over the substrate; forming a metal coating over at least a portion of the dielectric coating; removing a portion of the dielectric coating to expose a surface of the at least one support structure; removing a portion of the at least one support structure to form a nanowire growth surface; growing at least one nanowire on the nanowire growth surface of a corresponding one of the at least one support structure, wherein the nanowire comprises a root end attached to the growth surface and an opposing, free end extending from the root end; and elastically bending the at least one nanowire.

公开(公告)号：US20140329712A1

公开(公告)日：2014-11-06

申请号：US14347690

申请日：2012-09-28

Applicant: STC.UNM

Inventor： Jeremy Edwards ,  Payman Zarkesh-Ha ,  Steven R.J. Brueck

IPC: C12Q1/68

CPC classification number: C12Q1/6869 ,  C12Q1/6806 ,  C12Q1/6874 ,  G01N27/414 ,  G01N27/4145 ,  Y10T436/143333 ,  C12Q2531/125 ,  C12Q2535/122

Abstract: This disclosure describes, in one aspect, a method for preparing DNA molecule for sequencing. Generally, the method includes fragmenting the DNA molecule into double-stranded fragments; amplifying at least a portion of the double-stranded fragments; circularizing the fragments so that the first end of the fragment comprises a first loop connecting the strands and the second end of the fragment comprises a second loop connecting the strands; annealing a first sequencing primer to the first loop oriented to sequence at least a portion of one strand of the fragment; and annealing a second sequencing primer to the second loop oriented to sequence at least a portion of the other strand of the fragment. In another aspect, this disclosure describes a method for sequencing a DNA molecule. Generally, the method includes fragmenting the DNA molecule into double-stranded fragments; amplifying at least a portion of the double-stranded fragments; circularizing the fragments so that the first end of the fragment comprises a first loop connecting the strands and the second end of the fragment comprises a second loop connecting the strands; and sequencing at least one of the DNA strands.

Abstract translation: 本公开一方面描述了用于测序的DNA分子的制备方法。 通常，该方法包括将DNA分子片段化成双链片段; 扩增至少一部分双链片段; 使片段环化，使得片段的第一端包含连接线束的第一环和片段的第二端包括连接线的第二环; 将第一测序引物退火至所述第一环，其定向为序列所述片段的一条链的至少一部分; 以及将第二测序引物退火至所述第二环，其定向为序列所述片段的另一条链的至少一部分。 在另一方面，本公开描述了用于测序DNA分子的方法。 通常，该方法包括将DNA分子片段化成双链片段; 扩增至少一部分双链片段; 使片段环化，使得片段的第一端包含连接线束的第一环和片段的第二端包括连接线的第二环; 并测序至少一个DNA链。

公开(公告)号：US20200161449A1

公开(公告)日：2020-05-21

申请号：US16748361

申请日：2020-01-21

Applicant: STC.UNM

Inventor： Steven R.J. Brueck ,  Stephen D. Hersee ,  Seung-Chang Lee ,  Daniel Feezell

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/78 ,  B82Y40/00 ,  H01L29/04 ,  H01L29/06 ,  H01L29/775 ,  H01L29/20 ,  H01L29/778 ,  B82Y10/00 ,  H01L29/16

Abstract: A method for making a heteroepitaxial layer. The method comprises providing a semiconductor substrate. A seed area delineated with a selective growth mask is formed on the semiconductor substrate. The seed area comprises a first material and has a linear surface dimension of less than 100 nm. A heteroepitaxial layer is grown on the seed area, the heteroepitaxial layer comprising a second material that is different from the first material. Devices made by the method are also disclosed.