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    Method for manufacturing semiconductor device
    3.
    发明授权
    Method for manufacturing semiconductor device 有权

    公开(公告)号：US12094979B2

    公开(公告)日：2024-09-17

    申请号：US17285401

    申请日：2019-10-17

    申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    发明人： Shunpei Yamazaki ,  Yasuhiro Jinbo ,  Jun Ishikawa ,  Sachiaki Tezuka ,  Tetsuya Kakehata

    IPC分类号： H01L29/00 ,  H01L21/02 ,  H01L21/768 ,  H01L29/66 ,  H01L29/786

    CPC分类号： H01L29/7869 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/76826 ,  H01L29/66742

    摘要： A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a first oxide; a first conductor and a second conductor over the first oxide; a first insulator over the first conductor; a second insulator over the second conductor; a third insulator over the first insulator and the second insulator; a second oxide positioned over the first oxide and between the first conductor and the second conductor; a fourth insulator over the second oxide; a third conductor over the fourth insulator; a fifth insulator in contact with a top surface of the third insulator, a top surface of the second oxide, a top surface of the fourth insulator, and a top surface of the third conductor; a fourth conductor embedded in an opening formed in the first insulator, the third insulator, and the fifth insulator and in contact with the first conductor; and a fifth conductor embedded in an opening formed in the second insulator, the third insulator, and the fifth insulator and in contact with the second conductor. The third insulator includes, in the vicinity of an interface with the fourth conductor and in the vicinity of an interface with the fifth conductor, a region having a higher nitrogen concentration than a different region of the third insulator.

    Semiconductor device and method for manufacturing semiconductor device
    5.
    发明授权
    Semiconductor device and method for manufacturing semiconductor device 有权

    公开(公告)号：US11705524B2

    公开(公告)日：2023-07-18

    申请号：US17048255

    申请日：2019-04-16

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Tetsuya Kakehata ,  Yuta Endo

    IPC分类号： H01L29/786 ,  H01L29/24 ,  H01L29/66

    CPC分类号： H01L29/7869 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78648

    摘要： A semiconductor device with high on-state current and high reliability is provided. The semiconductor device includes first to fifth insulators, first to third oxides, and first to fourth conductors; the fifth insulator includes an opening in which the second oxide is exposed; the third oxide is placed in contact with a bottom portion of the opening and a side portion of the opening; the second insulator is placed in contact with the third oxide; the third conductor is provided in contact with the second insulator; the third insulator is placed in contact with a top surface of the third conductor and the second insulator; and the fourth conductor is in contact with the third insulator and the top surface of the third conductor and placed in the opening.

    Manufacturing method of semiconductor device
    6.
    发明授权
    Manufacturing method of semiconductor device 有权

    公开(公告)号：US11508850B2

    公开(公告)日：2022-11-22

    申请号：US17271716

    申请日：2019-08-30

    申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    发明人： Shunpei Yamazaki ,  Naoki Okuno ,  Tetsuya Kakehata ,  Hiroki Komagata ,  Yuji Egi

    IPC分类号： H01L29/786 ,  H01L21/02 ,  H01L29/66

    摘要： A manufacturing method of a semiconductor device includes the forming a first oxide over a substrate; depositing a first insulator over the first oxide; forming an opening reaching the first oxide in the first insulator; depositing a first oxide film in contact with the first oxide and the first insulator in the opening; depositing a first insulating film over the first oxide film by a PEALD method; depositing a first conductive film over the first insulating film; and removing part of the first oxide film, part of the first insulating film, and part of the first conductive film until a top surface of the first insulator is exposed to form a second oxide, a second insulator, and a first conductor. The deposition of the first insulating film is performed while the substrate is heated to higher than or equal to 300°.

    SOI substrate and manufacturing method thereof
    8.
    发明授权
    SOI substrate and manufacturing method thereof 有权
    SOI衬底及其制造方法

    公开(公告)号：US08884371B2

    公开(公告)日：2014-11-11

    申请号：US14134047

    申请日：2013-12-19

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Tetsuya Kakehata ,  Hideto Ohnuma ,  Yoshiaki Yamamoto ,  Kenichiro Makino

    IPC分类号： H01L27/12 ,  H01L29/02 ,  H01L29/786 ,  H01L31/0352 ,  H01L29/06 ,  H01L29/78 ,  H01L21/762 ,  H01L29/66

    CPC分类号： H01L27/1218 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/0649 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/78603 ,  H01L31/0352

    摘要： An object is to provide an SOI substrate provided with a semiconductor layer which can be used practically even when a glass substrate is used as a base substrate. Another object is to provide a semiconductor device having high reliability using such an SOI substrate. An altered layer is formed on at least one surface of a glass substrate used as a base substrate of an SOI substrate to form the SOI substrate. The altered layer is formed on at least the one surface of the glass substrate by cleaning the glass substrate with solution including hydrochloric acid, sulfuric acid or nitric acid. The altered layer has a higher proportion of silicon oxide in its composition and a lower density than the glass substrate.

    摘要翻译： 本发明的目的是提供一种具有半导体层的SOI衬底，即使在使用玻璃衬底作为基底衬底时也可以实际使用。 另一个目的是提供一种使用这种SOI衬底具有高可靠性的半导体器件。 在用作SOI衬底的基底衬底的玻璃衬底的至少一个表面上形成改变的层，以形成SOI衬底。 通过用包括盐酸，硫酸或硝酸的溶液清洗玻璃基板，在玻璃基板的至少一个表面上形成改变的层。 改变的层在其组成中具有较高比例的氧化硅，并且具有比玻璃基底更低的密度。