公开(公告)号：US11967649B2

公开(公告)日：2024-04-23

申请号：US17895126

申请日：2022-08-25

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Toshihiko Takeuchi ,  Naoto Yamade ,  Yutaka Okazaki ,  Sachiaki Tezuka ,  Shunpei Yamazaki

IPC分类号： H01L29/78 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/088 ,  H01L27/12 ,  H01L29/786 ,  H01L29/792 ,  H10B12/00

CPC分类号： H01L29/78693 ,  H01L21/8234 ,  H01L27/0629 ,  H01L27/088 ,  H01L27/1255 ,  H01L29/792 ,  H10B12/00

摘要： The semiconductor device includes a first conductor and a second conductor; a first insulator to a third insulator; and a first oxide to a third oxide. The first conductor is disposed to be exposed from a top surface of the first insulator. The first oxide is disposed over the first insulator and the first conductor. A first opening reaching the first conductor is provided in the first oxide. The second oxide is disposed over the first oxide. The second oxide comprises a first region, a second region, and a third region positioned between the first region and the second region. The third oxide is disposed over the second oxide. The second insulator is disposed over the third oxide. The second conductor is disposed over the second insulator. The third insulator is disposed to cover the first region and the second region and to be in contact with the top surface of the first insulator.

公开(公告)号：US09917209B2

公开(公告)日：2018-03-13

申请号：US15192312

申请日：2016-06-24

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Yuta Endo ,  Hideomi Suzawa ,  Sachiaki Tezuka ,  Tetsuhiro Tanaka ,  Toshiya Endo ,  Mitsuhiro Ichijo

IPC分类号： H01L29/78 ,  H01L29/786 ,  H01L29/66

CPC分类号： H01L29/78696 ,  H01L21/8258 ,  H01L27/0688 ,  H01L27/092 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78651 ,  H01L29/7869

摘要： A miniaturized transistor is provided. A first layer is formed over a third insulator over a semiconductor; a second layer is formed over the first layer; an etching mask is formed over the second layer; the second layer is etched using the etching mask until the first layer is exposed to form a third layer; a selective growth layer is formed on a top surface and a side surface of the third layer; the first layer is etched using the third layer and the selective growth layer until the third insulator is exposed to form a fourth layer; and the third insulator is etched using the third layer, the selective growth layer, and the fourth layer until the semiconductor is exposed to form a first insulator.

公开(公告)号：US09786495B2

公开(公告)日：2017-10-10

申请号：US14855648

申请日：2015-09-16

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Akihisa Shimomura ,  Naoki Okuno ,  Mitsuhiro Ichijo ,  Noriyoshi Suzuki ,  Tetsuhiro Tanaka ,  Sachiaki Tezuka

IPC分类号： H01L21/02 ,  H01L21/66 ,  H01J37/32 ,  C23C14/08 ,  C23C14/58

CPC分类号： H01L21/0234 ,  C23C14/08 ,  C23C14/5806 ,  C23C14/5826 ,  C23C14/5853 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L22/12

摘要： A method for evaluating a semiconductor film of a semiconductor device which is configured to include an insulating film, the semiconductor film, and a conductive film and to have a region where the semiconductor film and the conductive film overlap with each other with the insulating film provided therebetween, includes a step of performing plasma treatment after formation of the insulating film, and a step of calculating a peak value of resistivity of a microwave in the semiconductor film by a microwave photoconductive decay method after the plasma treatment, so that the hydrogen concentration in the semiconductor film is estimated.

公开(公告)号：US09136361B2

公开(公告)日：2015-09-15

申请号：US14656125

申请日：2015-03-12

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Sachiaki Tezuka ,  Atsuo Isobe ,  Takehisa Hatano ,  Kazuya Hanaoka

IPC分类号： H01L29/66 ,  H01L21/465 ,  H01L21/463

CPC分类号： H01L29/66969 ,  H01L21/463 ,  H01L21/465 ,  H01L29/41733 ,  H01L29/41783 ,  H01L29/7869

摘要： To provide a miniaturized transistor having high electric characteristics. A conductive film to be a source electrode layer and a drain electrode layer is formed to cover an oxide semiconductor layer and a channel protection layer, and then a region of the conductive film, which overlaps with the oxide semiconductor layer and the channel protection layer, is removed by chemical mechanical polishing treatment. Precise processing can be performed accurately because an etching step using a resist mask is not performed in the step of removing part of the conductive film to be the source electrode layer and the drain electrode layer. With the channel protection layer, damage to the oxide semiconductor layer or a reduction in film thickness due to the chemical mechanical polishing treatment on the conductive film can be suppressed.

公开(公告)号：US20150187952A1

公开(公告)日：2015-07-02

申请号：US14580651

申请日：2014-12-23

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Tetsuhiro Tanaka ,  Hideomi Suzawa ,  Yasumasa Yamane ,  Yuhei Sato ,  Sachiaki Tezuka

IPC分类号： H01L29/786 ,  H01L27/088 ,  H01L29/16

CPC分类号： H01L29/7869 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/1225 ,  H01L29/16

摘要： To provide a transistor with stable electrical characteristics, a transistor with a low off-state current, a transistor with a high on-state current, a semiconductor device including the transistor, or a durable semiconductor device. The semiconductor device includes a first transistor using silicon, an aluminum oxide film over the first transistor, and a second transistor using an oxide semiconductor over the aluminum oxide film. The oxide semiconductor has a lower hydrogen concentration than silicon.

摘要翻译： 为了提供具有稳定电特性的晶体管，具有低截止电流的晶体管，具有高导通电流的晶体管，包括晶体管的半导体器件或耐用的半导体器件。 半导体器件包括使用硅的第一晶体管，在第一晶体管上的氧化铝膜，以及在氧化铝膜上使用氧化物半导体的第二晶体管。 氧化物半导体的氢浓度低于硅。

公开(公告)号：US11646378B2

公开(公告)日：2023-05-09

申请号：US17167286

申请日：2021-02-04

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Tetsuhiro Tanaka ,  Mitsuhiro Ichijo ,  Toshiya Endo ,  Akihisa Shimomura ,  Yuji Egi ,  Sachiaki Tezuka ,  Shunpei Yamazaki

IPC分类号： H01L29/786 ,  H01L29/423 ,  H01L29/49

CPC分类号： H01L29/7869 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78606 ,  H01L29/78648

摘要： A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.

公开(公告)号：US11495691B2

公开(公告)日：2022-11-08

申请号：US17056072

申请日：2019-05-27

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Toshihiko Takeuchi ,  Naoto Yamade ,  Yutaka Okazaki ,  Sachiaki Tezuka ,  Shunpei Yamazaki

IPC分类号： H01L29/78 ,  H01L29/786 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/088 ,  H01L27/108 ,  H01L27/12 ,  H01L29/792

摘要： The semiconductor device includes a first conductor and a second conductor; a first insulator to a third insulator; and a first oxide to a third oxide. The first conductor is disposed to be exposed from a top surface of the first insulator. The first oxide is disposed over the first insulator and the first conductor. A first opening reaching the first conductor is provided in the first oxide. The second oxide is disposed over the first oxide. The second oxide comprises a first region, a second region, and a third region positioned between the first region and the second region. The third oxide is disposed over the second oxide. The second insulator is disposed over the third oxide. The second conductor is disposed over the second insulator. The third insulator is disposed to cover the first region and the second region and to be in contact with the top surface of the first insulator.

公开(公告)号：US09190527B2

公开(公告)日：2015-11-17

申请号：US14174412

申请日：2014-02-06

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Sachiaki Tezuka ,  Hideomi Suzawa ,  Akihisa Shimomura ,  Tetsuhiro Tanaka

IPC分类号： H01L29/49 ,  H01L29/786 ,  H01L29/66

CPC分类号： H01L29/7869 ,  H01L21/02318 ,  H01L29/66969

摘要： A highly reliable semiconductor device including an oxide semiconductor is provided. Oxygen is supplied from a base insulating layer provided below an oxide semiconductor layer to a channel formation region, whereby oxygen vacancies which might be generated in the channel formation region are filled. Further, a protective insulating layer containing a small amount of hydrogen and functioning as a barrier layer having a low permeability to oxygen is formed over the gate electrode layer so as to cover side surfaces of an oxide layer and a gate insulating layer that are provided over the oxide semiconductor layer, whereby release of oxygen from the gate insulating layer and/or the oxide layer is prevented and generation of oxygen vacancies in a channel formation region is prevented.

摘要翻译： 提供了包括氧化物半导体的高度可靠的半导体器件。 氧气从设置在氧化物半导体层下方的基底绝缘层供给到沟道形成区域，由此填充可能在沟道形成区域中产生的氧空位。 此外，在栅电极层上形成包含少量氢并用作具有低氧渗透性的阻挡层的保护绝缘层，以覆盖设置在氧化物层和栅绝缘层上的侧表面 氧化物半导体层，从而防止了从栅极绝缘层和/或氧化物层的氧的释放，并且防止了沟道形成区域中的氧空位的产生。

公开(公告)号：US09166021B2

公开(公告)日：2015-10-20

申请号：US14047639

申请日：2013-10-07

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Sachiaki Tezuka ,  Tetsuhiro Tanaka ,  Toshihiko Takeuchi ,  Hideomi Suzawa ,  Suguru Hondo

IPC分类号： H01L21/00 ,  H01L21/16 ,  H01L29/66 ,  H01L21/28 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/49 ,  H01L21/8238 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/823462 ,  H01L21/823857 ,  H01L29/1054 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78

摘要： Stable electrical characteristics and high reliability are provided for a miniaturized semiconductor device including an oxide semiconductor, and the semiconductor device is manufactured. The semiconductor device includes a base insulating layer; an oxide stack which is over the base insulating layer and includes an oxide semiconductor layer; a source electrode layer and a drain electrode layer over the oxide stack; a gate insulating layer over the oxide stack, the source electrode layer, and the drain electrode layer; a gate electrode layer over the gate insulating layer; and an interlayer insulating layer over the gate electrode layer. In the semiconductor device, the defect density in the oxide semiconductor layer is reduced.

摘要翻译： 为包括氧化物半导体的小型半导体器件提供稳定的电特性和高可靠性，并且制造半导体器件。 半导体器件包括基极绝缘层; 氧化物堆叠，其在所述基底绝缘层上方并且包括氧化物半导体层; 氧化层上的源电极层和漏电极层; 氧化层上的栅极绝缘层，源电极层和漏电极层; 栅绝缘层上的栅电极层; 以及在栅电极层上的层间绝缘层。 在半导体器件中，氧化物半导体层中的缺陷密度降低。

公开(公告)号：US20150108472A1

公开(公告)日：2015-04-23

申请号：US14518259

申请日：2014-10-20

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Hideomi Suzawa ,  Tetsuhiro Tanaka ,  Yuhei Sato ,  Sachiaki Tezuka ,  Shunpei Yamazaki

IPC分类号： H01L29/786 ,  H01L29/51

CPC分类号： H01L29/78648 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/41733 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696 ,  H01L2029/42388

摘要： A transistor having high field-effect mobility is provided. A transistor having stable electrical characteristics is provided. A transistor having small current in an off state (in a non-conductive state) is provided. A semiconductor device including such a transistor is provided. A first electrode is formed over a substrate, a first insulating layer is formed adjacent to a side surface of the first electrode, and a second insulating layer is formed to cover the first insulating layer and be in contact with at least part of a surface of the first electrode. The surface of the first electrode is formed of a conductive material that does not easily transmit an impurity element. The second insulating layer is formed of an insulating material that does not easily transmit an impurity element. An oxide semiconductor layer is formed over the first electrode with a third insulating layer provided therebetween.

摘要翻译： 提供具有高场效应迁移率的晶体管。 提供具有稳定电特性的晶体管。 提供了处于断开状态（非导通状态）的小电流的晶体管。 提供了包括这种晶体管的半导体器件。 第一电极形成在衬底上，第一绝缘层与第一电极的侧表面相邻地形成，并且形成第二绝缘层以覆盖第一绝缘层并与第一绝缘层的至少一部分表面接触 第一个电极。 第一电极的表面由不容易透过杂质元素的导电材料形成。 第二绝缘层由不容易透过杂质元素的绝缘材料形成。 在第一电极上形成氧化物半导体层，其间设置有第三绝缘层。