发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US14518259申请日： 2014-10-20
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公开(公告)号： US20150108472A1公开(公告)日： 2015-04-23
- 发明人: Hideomi Suzawa , Tetsuhiro Tanaka , Yuhei Sato , Sachiaki Tezuka , Shunpei Yamazaki
- 申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 优先权： JP2013-219459 20131022
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/51
摘要：
A transistor having high field-effect mobility is provided. A transistor having stable electrical characteristics is provided. A transistor having small current in an off state (in a non-conductive state) is provided. A semiconductor device including such a transistor is provided. A first electrode is formed over a substrate, a first insulating layer is formed adjacent to a side surface of the first electrode, and a second insulating layer is formed to cover the first insulating layer and be in contact with at least part of a surface of the first electrode. The surface of the first electrode is formed of a conductive material that does not easily transmit an impurity element. The second insulating layer is formed of an insulating material that does not easily transmit an impurity element. An oxide semiconductor layer is formed over the first electrode with a third insulating layer provided therebetween.
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