公开(公告)号：US12288765B2

公开(公告)日：2025-04-29

申请号：US17477806

申请日：2021-09-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kunmo Chu ,  Byonggwon Song ,  Junghoon Lee

IPC: H01L23/00

Abstract: Provided are a hybrid bonding structure, a solder paste composition, a semiconductor device, and a method of manufacturing the semiconductor device. The hybrid bonding structure includes a solder ball and a solder paste bonded to the solder ball. The solder paste includes a transient liquid phase. The transient liquid phase includes a core and a shell on a surface of the core. A melting point of the shell may be lower than a melting point of the core. The core and the shell are configured to form an intermetallic compound in response to the transient liquid phase at least partially being at a temperature that is within a temperature range of about 20° C. to about 190° C.

公开(公告)号：US20240206177A1

公开(公告)日：2024-06-20

申请号：US18591076

申请日：2024-02-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wukang Kim ,  Sejun Park ,  Hyoje Bang ,  Jaeduk Lee ,  Junghoon Lee

IPC: H10B43/27 ,  H01L23/522 ,  H01L23/535 ,  H10B43/35

CPC classification number: H10B43/27 ,  H01L23/5226 ,  H01L23/535 ,  H10B43/35

Abstract: A semiconductor device including a stack structure including gate layers and interlayer insulating layers spaced apart in a vertical direction, a channel hole penetrating the stack structure in the vertical direction, a core region extending within the channel hole, a channel layer disposed on a side surface of the core region, a first dielectric layer, a data storage layer and a second dielectric layer, which are disposed between the channel layer and the gate layers, and a pad pattern disposed on the core region, in the channel hole, and in contact with the channel layer. A first horizontal distance between a side surface of a first portion of an uppermost gate layer and an outer side surface of the channel layer is greater than a second horizontal distance between a side surface of a second portion of the uppermost gate layer and an outer side surface of the pad pattern.

公开(公告)号：US20210408037A1

公开(公告)日：2021-12-30

申请号：US17172458

申请日：2021-02-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wukang Kim ,  Sejun Park ,  Hyoje Bang ,  Jaeduk Lee ,  Junghoon Lee

IPC: H01L27/11582 ,  H01L23/522 ,  H01L23/535

Abstract: A semiconductor device including a stack structure including gate layers and interlayer insulating layers spaced apart in a vertical direction, a channel hole penetrating the stack structure in the vertical direction, a core region extending within the channel hole, a channel layer disposed on a side surface of the core region, a first dielectric layer, a data storage layer and a second dielectric layer, which are disposed between the channel layer and the gate layers, and a pad pattern disposed on the core region, in the channel hole, and in contact with the channel layer. A first horizontal distance between a side surface of a first portion of an uppermost gate layer and an outer side surface of the channel layer is greater than a second horizontal distance between a side surface of a second portion of the uppermost gate layer and an outer side surface of the pad pattern.

公开(公告)号：US09924480B2

公开(公告)日：2018-03-20

申请号：US15216320

申请日：2016-07-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sooyong Kim ,  Junghwan Son ,  Junghoon Lee ,  Intae Kang ,  Chaehag Yi

IPC: H04W24/08 ,  H04W56/00 ,  H04B17/13 ,  H04B1/04

CPC classification number: H04W56/0015 ,  H04B17/13 ,  H04B2001/045 ,  H04W24/08

Abstract: Methods and apparatuses are provided in which a first terminal determines a delay offset value based on a first delay value of a first channel between the first terminal and an entity, and a second delay value of a second channel between the first terminal and the entity. The delay offset value is transmitted from the first terminal, to a second terminal. The second terminal uses the delay offset value to determine a third delay value of a third channel between the second terminal and the entity based on a fourth delay value of a fourth channel between the second terminal and the entity, the fourth delay value being determined by the second terminal.

公开(公告)号：US11094982B2

公开(公告)日：2021-08-17

申请号：US16298229

申请日：2019-03-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moo Ho Lee ,  Moon Il Jung ,  In Kim ,  In Su Lee ,  Junghoon Lee ,  Hye Jeong Lee ,  Song Won Hyun

IPC: H01M50/116 ,  H01M10/0525 ,  B32B27/08 ,  B32B27/32 ,  H01M50/20 ,  H01M50/24 ,  H01M50/155 ,  H01M50/166

Abstract: A battery case including a container configured to house an electrode assembly, wherein the container includes a bottom wall and a plurality of side walls, the bottom wall and the side walls integrated to define a space for housing the electrode assembly and an open side opposed to the bottom wall, the container includes a composite including a polymer matrix, an inorganic moisture absorbent dispersed in the base polymer, and a compatibilizer to promote compatibility between the polymer matrix and the inorganic moisture absorbent, the compatibilizer is included in an amount of less than about 3 wt % based on a total weight of the composite, at least one of the bottom wall and the side walls at a thickness of 1 millimeter has a water vapor transmission rate of less than about 0.07 g/m2/day, when measured at 38° C. and a relative humidity of 100%.

公开(公告)号：US11088357B2

公开(公告)日：2021-08-10

申请号：US16217126

申请日：2018-12-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Moon Il Jung ,  Song Won Hyun ,  In Kim ,  Moo Ho Lee ,  In Su Lee ,  Junghoon Lee ,  Hye Jeong Lee ,  Ginam Kim

IPC: H01M2/28 ,  H01M2/02 ,  H01M10/058 ,  H01M2/06 ,  H01M2/04 ,  H01M10/0525 ,  H01M10/52

Abstract: A battery case including: a container configured to house an electrode assembly, wherein the container includes a bottom wall and a plurality of side walls, the bottom wall and the plurality of side walls are integrated to define a space for housing the electrode assembly and to provide a top opening opposite the bottom wall, the container includes a polymeric composition including a polymer and an inorganic moisture absorbent dispersed in the polymer, and the battery case has a water vapor transmission rate (WVTR) of less than about 0.05 grams per square meter per day, when measured at 38° C. and a relative humidity of 100% according to ISO 15106 or ASTM F1249.

公开(公告)号：US10944853B2

公开(公告)日：2021-03-09

申请号：US16807487

申请日：2020-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younghoon Lee ,  Woonbae Kim ,  Chulhwan Lee ,  Sungkyu Hwang ,  Cheolsoo Kim ,  Minwook Jin ,  Howon Lee ,  Chulho Bae ,  Junghoon Lee

IPC: H04B1/38 ,  H04M1/02

Abstract: According to certain embodiments, an electronic device may include a housing, a slidable body; a driver including: a drive motor, a rotatable drive shaft for the drive motor, and a nut frame including a latch projection, protruding in a direction of the slidable body, and a slide hinge disposed on the slidable body and coupled to the driver, wherein the slide hinge includes: a slide plate coupled to the slidable body, and a locker including a latch groove, into which the latch protrusion is inserted, wherein, when the latch projection is inserted into the latch groove, the slidable body is moved by the driver, and wherein the slide plate defines an escape area configured to receive at least a portion of the nut frame and/or the latch protrusion, when an external impact causes the latch protrusion to separate from the latch groove.

公开(公告)号：US10324333B2

公开(公告)日：2019-06-18

申请号：US15435908

申请日：2017-02-17

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Samsung SDI Co., Ltd.

Inventor： Deuk Kyu Moon ,  Yong Joo Lee ,  Yoon-suk Kang ,  Junghoon Lee ,  Boreum Jeong ,  Jonghyun Ha ,  Myungsup Jung

IPC: G02F1/1335 ,  C08L23/12 ,  C08L23/16 ,  C09B31/02 ,  C09B31/28 ,  G02F1/13363 ,  H01L51/52 ,  C09B67/22

Abstract: A color polarizing film including a first layer including a first polymer and a first dichroic dye having an absorption wavelength region of about 380 nm to about 780 nm and a second layer including a second polymer and a second dichroic dye having an absorption wavelength region of about 380 nm to about 780 nm, wherein the second layer is disposed on the first layer, wherein a polarization axis of the first layer and a polarization axis of a second layer cross each other, and wherein the color polarizing film exhibits a maximum absorption wavelength (λmax) in a wavelength range of about 380 nm to about 780 nm.

公开(公告)号：US11804462B2

公开(公告)日：2023-10-31

申请号：US17467973

申请日：2021-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kunmo Chu ,  Junghoon Lee ,  Byonggwon Song

IPC: H01L23/00

CPC classification number: H01L24/29 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16147 ,  H01L2224/16237 ,  H01L2224/29311 ,  H01L2224/29313 ,  H01L2224/29339 ,  H01L2224/29387 ,  H01L2224/29409 ,  H01L2224/29411 ,  H01L2224/29439 ,  H01L2224/29444 ,  H01L2224/29447 ,  H01L2224/29455 ,  H01L2224/32057 ,  H01L2224/32147 ,  H01L2224/32237 ,  H01L2224/73203 ,  H01L2224/81815 ,  H01L2224/83815 ,  H01L2224/9211 ,  H01L2924/0545 ,  H01L2924/1436 ,  H01L2924/1443 ,  H01L2924/20104 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754

Abstract: A hybrid bonding structure and a semiconductor including the hybrid bonding structure are provided. The hybrid bonding structure includes a solder ball and a solder paste bonded to the solder ball. The solder paste may include solder particles including at least one of In, Zn, SnBiAg alloy, or SnBi alloy, and ceramic particles. The solder paste may include a flux. The solder particles may include Sn(42.0 wt %)-Ag(0.4 wt %)-Bi(57.5−X) wt %, and the ceramic particles include CeO2(X) wt %, where 0.05≤X≤0.1.

公开(公告)号：US11569773B2

公开(公告)日：2023-01-31

申请号：US16922419

申请日：2020-07-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taeho Lee ,  Junghyun Lee ,  Junghoon Lee ,  Yoonsup Kim ,  Youngjae Park ,  Jieun Ban ,  Jong-Hyun Shin

IPC: H02P27/08 ,  H02M5/458 ,  F04D13/06

Abstract: A compressor control apparatus includes a rectifier configured to rectify AC power to DC power; an inverter including a plurality of switching elements, configured to convert the DC power into a three-phase voltage according to a pulse width modulation (PWM) signal applied to the plurality of switching elements; a motor configured to receive a three-phase current based on the three-phase voltage; a current detector configured to detect a sum of a first phase current, a second phase current, and a third phase current supplied to the motor; and a controller configured to differently determine a duty ratio of the PWM signal applied to each of the plurality of switching elements, and to determine the first phase current, the second phase current, and the third phase current, respectively, based on the determined duty ratio and the sum of the currents detected from the current detector.