公开(公告)号：US11996232B2

公开(公告)日：2024-05-28

申请号：US17245641

申请日：2021-04-30

申请人： REGENTS OF THE UNIVERSITY OF MINNESOTA

发明人： Jian-Ping Wang ,  YanFeng Jiang

IPC分类号： H01F1/047 ,  B22D27/02 ,  C22C38/00 ,  H01F1/06 ,  H01F1/08 ,  H01F41/02 ,  H02K1/02

CPC分类号： H01F41/0273 ,  B22D27/02 ,  C22C38/001 ,  H01F1/047 ,  H01F1/06 ,  H01F1/08 ,  H01F41/0266 ,  H02K1/02

摘要： Techniques are disclosed concerning applied magnetic field synthesis and processing of iron nitride magnetic materials. Some methods concern casting a material including iron in the presence of an applied magnetic field to form a workpiece including at least one iron-based phase domain including uniaxial magnetic anisotropy, wherein the applied magnetic field has a strength of at least about 0.01 Tesla (T). Also disclosed are workpieces made by such methods, apparatus for making such workpieces and bulk materials made by such methods.

公开(公告)号：US20240172565A1

公开(公告)日：2024-05-23

申请号：US18496019

申请日：2023-10-27

申请人： Regents of the University of Minnesota

发明人： Jian-Ping Wang ,  Tony Low ,  Yifei Yang ,  Seungjun Lee

IPC分类号： H10N50/20 ,  H10B61/00 ,  H10N50/01 ,  H10N50/85

CPC分类号： H10N50/20 ,  H10B61/00 ,  H10N50/01 ,  H10N50/85

摘要： A device which includes a free layer and a current channel. The free layer has a configurable magnetization state. The current channel includes a low-symmetry crystal with only one mirror plane. The low-symmetry material has relatively large unconventional spin Hall effect (SHE). A current through the current channel applies a spin-orbit torque that sets the magnetization state of the free layer.

公开(公告)号：US11875934B2

公开(公告)日：2024-01-16

申请号：US16423516

申请日：2019-05-28

申请人： REGENTS OF THE UNIVERSITY OF MINNESOTA

发明人： Jian-Ping Wang ,  Md Mehedi ,  YanFeng Jiang ,  Bin Ma ,  Delin Zhang ,  Fan Zhang ,  Jinming Liu

IPC分类号： C01B21/06 ,  H01F1/10 ,  C22C38/00 ,  H01F41/02 ,  H01F1/03 ,  C22C38/06 ,  H01F1/00 ,  C22C38/16

CPC分类号： H01F41/0253 ,  C01B21/0622 ,  H01F1/10 ,  C21D2201/05 ,  C21D2211/008 ,  C22C38/001 ,  C22C38/06 ,  C22C38/16 ,  C22C2200/04 ,  C22C2202/02 ,  H01F1/0009 ,  H01F1/03

摘要： The disclosure is directed to an iron-nitride material having a polycrystalline microstructure including a plurality of elongated crystallographic grains with grain boundaries, the iron-nitride material including at least one of an α″-Fe16N2 phase and a body-center-tetragonal (bct) phase comprising Fe and N. The disclosure is also directed a method producing an iron-nitride material. The method includes some combinations of preparing a raw material comprising iron, carrying out a microstructure build-up by annealing the prepared raw material at an elevated temperature and subsequently quenching the prepared raw material to produce a microstructure build-up material, annealing the microstructure build-up material, reducing the microstructure build-up material in a hydrogen environment, nitriding the reduced material to produce a nitrided material and subsequently quenching the nitrided material to a martensitic transformation temperature, stress annealing the nitrided material, and magnetic field annealing the stress-annealed material.

公开(公告)号：US11552242B2

公开(公告)日：2023-01-10

申请号：US17225785

申请日：2021-04-08

申请人： Regents of the University of Minnesota

发明人： Duarte José Pereira de Sousa ,  Cesar Octavio Ascencio ,  Jian-Ping Wang ,  Tony Low

IPC分类号： G11C11/18 ,  H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  H01L43/14 ,  G11C11/16 ,  H01L43/10

摘要： In some examples, a device includes a magnetic tunnel junction including a first Weyl semimetal layer, a second Weyl semimetal layer, and a dielectric layer positioned between the first and second Weyl semimetal layers. The magnetic tunnel junction may have a large tunnel magnetoresistance ratio, which may be greater than five hundred percent or even greater than one thousand percent.

公开(公告)号：US11511344B2

公开(公告)日：2022-11-29

申请号：US16737156

申请日：2020-01-08

申请人： REGENTS OF THE UNIVERSITY OF MINNESOTA

发明人： Jian-Ping Wang ,  YanFeng Jiang

IPC分类号： C01B21/00 ,  H01F1/08 ,  B22F9/04 ,  C22C33/02 ,  H01F1/06 ,  B22F1/054 ,  C01B21/06 ,  C23C8/26 ,  H01F41/02

摘要： Techniques are disclosed for milling an iron-containing raw material in the presence of a nitrogen source to generate anisotropically shaped particles that include iron nitride and have an aspect ratio of at least 1.4. Techniques for nitridizing an anisotropic particle including iron, and annealing an anisotropic particle including iron nitride to form at least one α″-Fe16N2 phase domain within the anisotropic particle including iron nitride also are disclosed. In addition, techniques for aligning and joining anisotropic particles to form a bulk material including iron nitride, such as a bulk permanent magnet including at least one α″-Fe16N2 phase domain, are described. Milling apparatuses utilizing elongated bars, an electric field, and a magnetic field also are disclosed.

公开(公告)号：US11217371B2

公开(公告)日：2022-01-04

申请号：US16876675

申请日：2020-05-18

申请人： Regents of the University of Minnesota

发明人： Jian-Ping Wang ,  Yanfeng Jiang

IPC分类号： H01F1/10 ,  H01F1/08 ,  C22C38/00 ,  H01F1/34 ,  B22F7/08 ,  C23C8/26 ,  C23C8/80 ,  C23C14/48 ,  C22C29/16 ,  B22D11/00 ,  B22D11/06 ,  H01F1/055 ,  H01F1/147 ,  H01F41/02 ,  H01F1/057

摘要： A bulk permanent magnetic material may include between about 5 volume percent and about 40 volume percent Fe16N2 phase domains, a plurality of nonmagnetic atoms or molecules forming domain wall pinning sites, and a balance soft magnetic material, wherein at least some of the soft magnetic material is magnetically coupled to the Fe16N2 phase domains via exchange spring coupling. In some examples, a bulk permanent magnetic material may be formed by implanting N+ ions in an iron workpiece using ion implantation to form an iron nitride workpiece, pre-annealing the iron nitride workpiece to attach the iron nitride workpiece to a substrate, and post-annealing the iron nitride workpiece to form Fe16N2 phase domains within the iron nitride workpiece.

公开(公告)号：US10961615B2

公开(公告)日：2021-03-30

申请号：US15840747

申请日：2017-12-13

申请人： Regents of the University of Minnesota ,  UT-BATTELLE, LLC

发明人： Michael P. Brady ,  Orlando Rios ,  Yanfeng Jiang ,  Gerard M. Ludtka ,  Craig A. Bridges ,  Jian-Ping Wang ,  Xiaowei Zhang ,  Lawrence F. Allard ,  Edgar Lara-Curzio

IPC分类号： C23C8/26 ,  C21D1/26 ,  C21D6/00 ,  C22C38/00 ,  C23C28/00 ,  C01B21/06 ,  C22C33/00 ,  H01F1/06 ,  H01F1/047

摘要： A method may include annealing a material including iron and nitrogen in the presence of an applied magnetic field to form at least one Fe16N2 phase domain. The applied magnetic field may have a strength of at least about 0.2 Tesla (T).

公开(公告)号：US20200176042A1

公开(公告)日：2020-06-04

申请号：US16782845

申请日：2020-02-05

申请人： Regents of the University of Minnesota ,  Carnegie Mellon University

发明人： Jian-Ping Wang ,  Delin Zhang ,  Sara A. Majetich ,  Mukund Bapna

IPC分类号： G11C11/16 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10

摘要： A magnetic device may include a layer stack. The layer stack may include a first ferromagnetic layer; a non-magnetic spacer layer on the first ferromagnetic layer, where the non-magnetic spacer layer comprises at least one of Ru, Ir, Ta, Cr, W, Mo, Re, Hf, Zr, or V; a second ferromagnetic layer on the non-magnetic spacer layer; and an oxide layer on the second ferromagnetic layer. The magnetic device also may include a voltage source configured to apply a bias voltage across the layer stack to cause switching of a magnetic orientation of the second ferromagnetic layer without application of an external magnetic field or a current. A thickness and composition of the non-magnetic spacer layer may be selected to enable a switching direction of the magnetic orientation of the second ferromagnetic layer to be controlled by a sign of the bias voltage.

公开(公告)号：US20190237510A1

公开(公告)日：2019-08-01

申请号：US16374925

申请日：2019-04-04

申请人： Regents of the University of Minnesota

发明人： Jian-Ping Wang ,  Yang Lv ,  Mahdi Jamali

IPC分类号： H01L27/22 ,  G11C11/18 ,  H03K19/177 ,  H03K19/18 ,  G11C11/16 ,  H01L43/10 ,  H01L43/08 ,  H01L43/04

CPC分类号： H01L27/224 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01L27/22 ,  H01L27/222 ,  H01L43/04 ,  H01L43/08 ,  H01L43/10 ,  H03K19/177 ,  H03K19/1776 ,  H03K19/18

摘要： This disclosure describes an example device that includes a first contact line, a second contact line, a spin-orbital coupling channel, and a magnet. The spin-orbital coupling channel is coupled to, and is positioned between, the first contact line and second contact line. The magnet is coupled to the spin-orbital coupling channel and positioned between the first contact line and the second contact line. A resistance of the magnet and spin-orbital coupling channel is a unidirectional magnetoresistance.

公开(公告)号：US10354709B2

公开(公告)日：2019-07-16

申请号：US15730405

申请日：2017-10-11

申请人： Regents of the University of Minnesota

发明人： Jian-Ping Wang ,  Junyang Chen ,  Mo Li

IPC分类号： H01L29/06 ,  G11C11/16 ,  H01L43/10 ,  H01L43/08 ,  H01L27/22

摘要： A magnetic device may include a composite free layer that includes a first sub-layer comprising at least one of a Co-based alloy, a Fe-based alloy, or a Heusler alloy; a second sub-layer comprising at least one of a Co-based alloy, a Fe-based alloy, or a Heusler alloy; and an intermediate sub-layer between the first sub-layer and the second sub-layer. The composite free layer exhibits a magnetic easy axis oriented out of a plane of the composite free layer.