公开(公告)号：US11973119B2

公开(公告)日：2024-04-30

申请号：US17222534

申请日：2021-04-05

申请人： RENESAS ELECTRONICS CORPORATION

发明人： Tadashi Yamaguchi

IPC分类号： H01L21/28 ,  G11C11/22 ,  H01L29/51 ,  H01L29/78 ,  H10B51/10 ,  H10B51/30

CPC分类号： H01L29/40111 ,  G11C11/223 ,  H01L29/516 ,  H01L29/78391 ,  H10B51/10 ,  H10B51/30 ,  H01L29/517

摘要： A first amorphous film containing hafnium, oxygen and a first element such as zirconium is formed, a plurality of grains containing a second element different from any of hafnium, oxygen and the first element are formed on the first amorphous film, a second amorphous film made of the same material as the first amorphous film is formed on the plurality of grains and on the first amorphous film, and a metal film is formed on the second amorphous film. Thereafter, by performing heat treatment, the first amorphous film is crystallized to form a first orthorhombic ferroelectric film and the second amorphous film is crystallized to form a second orthorhombic ferroelectric film.

公开(公告)号：US11563020B2

公开(公告)日：2023-01-24

申请号：US16515352

申请日：2019-07-18

申请人： Renesas Electronics Corporation

发明人： Tadashi Yamaguchi

IPC分类号： H01L29/49 ,  H01L21/28 ,  H01L29/78 ,  H01L29/45 ,  H01L29/66 ,  H01L27/11563 ,  H01L29/792 ,  H01L27/1157 ,  H01L27/11573 ,  H01L29/51

摘要： A method for manufacturing a semiconductor device to provide a Metal Insulator Semiconductor Field Effect Transistor (MISFET) in a first region of a semiconductor substrate includes forming a first gate insulating film on the semiconductor substrate in the first region, forming a first gate electrode containing silicon on the first gate insulating film, forming first impurity regions inside the semiconductor substrate so as to sandwich the first gate electrode in the first region, the first impurity regions configuring a part of a first source region and a part of a first drain region, forming a first silicide layer on the first impurity region, forming a first insulating film on the semiconductor substrate so as to cover the first gate electrode and the first silicide layer, polishing the first insulating film so as to expose the first gate electrode, and forming a second silicide layer on the first gate electrode.

公开(公告)号：US11476339B2

公开(公告)日：2022-10-18

申请号：US16858857

申请日：2020-04-27

申请人： Renesas Electronics Corporation

发明人： Tadashi Yamaguchi

IPC分类号： H01L29/51 ,  H01L29/66 ,  H01L21/02 ,  H01L29/78 ,  H01L21/28 ,  H01L27/11568 ,  H01L21/3105 ,  H01L49/02 ,  H01L27/11507 ,  H01L27/1159

摘要： To allow a metal oxide film composed mainly of O and at least one of Hf and Zr to exhibit ferroelectric properties. After deposition of a hafnium oxide film on a semiconductor substrate via an insulating film, the semiconductor substrate is exposed to microwaves to selectively heat the hafnium oxide film. This makes it possible to form a larger number of orthorhombic crystals in the crystals of the hafnium oxide film. The hafnium oxide film thus obtained can therefore exhibit ferroelectric properties without adding, thereto, an impurity such as Si. This means that the hafnium oxide film having a reverse size effect can be used as a ferroelectric film of a ferroelectric memory cell and contributes to the manufacture of a miniaturized ferroelectric memory cell.

公开(公告)号：US10680071B2

公开(公告)日：2020-06-09

申请号：US15909980

申请日：2018-03-01

申请人： Renesas Electronics Corporation

发明人： Tadashi Yamaguchi

IPC分类号： H01L21/28 ,  H01L21/02 ,  H01L21/3105 ,  H01L29/51 ,  H01L29/66 ,  H01L27/11568 ,  H01L49/02 ,  H01L29/78 ,  H01L27/11507 ,  H01L27/1159

摘要： To allow a metal oxide film composed mainly of O and at least one of Hf and Zr to exhibit ferroelectric properties. After deposition of a hafnium oxide film on a semiconductor substrate via an insulating film, the semiconductor substrate is exposed to microwaves to selectively heat the hafnium oxide film. This makes it possible to form a larger number of orthorhombic crystals in the crystals of the hafnium oxide film. The hafnium oxide film thus obtained can therefore exhibit ferroelectric properties without adding, thereto, an impurity such as Si. This means that the hafnium oxide film having a reverse size effect can be used as a ferroelectric film of a ferroelectric memory cell and contributes to the manufacture of a miniaturized ferroelectric memory cell.

公开(公告)号：US10229925B2

公开(公告)日：2019-03-12

申请号：US15879257

申请日：2018-01-24

申请人： Renesas Electronics Corporation

发明人： Tadashi Yamaguchi

IPC分类号： H01L21/67 ,  H01L27/11568 ,  H01L21/285 ,  H01L21/324 ,  H01L21/762 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78 ,  H01L29/792 ,  H01L21/28 ,  H01L27/11573

摘要： A method of manufacturing a semiconductor device, includes forming a fin structure on a main surface of semiconductor substrate, the fin structure including a silicon material; forming a first gate electrode over the fin structure via a first insulating film, and forming a second gate electrode over the fin structure via a second insulating film having a charge accumulating part, such that the second gate electrode is disposed along a sidewall of the first gate electrode in a plan view; forming source and drain regions over a surface of the fin structure at both sides of a structure defined by the first and second gate electrodes; performing a first heat treatment to the semiconductor substrate to keep the semiconductor substrate at a first predetermined temperature; and forming a first metal film on the fin structure by sputtering in condition that the semiconductor substrate is at the first predetermined temperature.

公开(公告)号：US09953858B2

公开(公告)日：2018-04-24

申请号：US14683594

申请日：2015-04-10

申请人： Renesas Electronics Corporation

发明人： Tadashi Yamaguchi

IPC分类号： H01L21/76 ,  H01L21/762 ,  H01L21/02 ,  H01L21/308 ,  H01L27/092 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/10 ,  H01L21/8238

CPC分类号： H01L21/76224 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/3081 ,  H01L21/764 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823878 ,  H01L27/0922 ,  H01L29/1045 ,  H01L29/42368 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/7833 ,  H01L29/7835

摘要： To provide a semiconductor device having improved performance. The semiconductor device has a first insulating film formed on the main surface of a semiconductor substrate and a second insulating film formed on the first insulating film. The semiconductor device further has a first opening portion penetrating through the second insulating film and reaching the first insulating film, a second opening portion penetrating through the first insulating film and reaching the semiconductor substrate, and a trench portion formed in the semiconductor substrate. A first opening width of the first opening portion and a second opening width of the second opening portion are greater than a trench width of the trench portion. The trench portion is closed by a third insulating film while leaving a space in the trench portion.

公开(公告)号：US09704875B2

公开(公告)日：2017-07-11

申请号：US15259502

申请日：2016-09-08

申请人： Renesas Electronics Corporation

发明人： Tadashi Yamaguchi

IPC分类号： H01L27/115 ,  H01L27/11568 ,  H01L29/45 ,  H01L21/3105 ,  H01L29/66 ,  H01L21/285 ,  H01L21/321 ,  H01L21/28 ,  H01L27/11521 ,  H01L29/423

CPC分类号： H01L27/11568 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/28518 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/3212 ,  H01L27/11521 ,  H01L27/1157 ,  H01L27/11573 ,  H01L29/42328 ,  H01L29/42344 ,  H01L29/45 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/792

摘要： When upper surfaces of a control gate electrode and a memory gate electrode are exposed from an interlayer insulating film by polishing the interlayer insulating film in a gate last process, a silicide layer covering the upper surfaces of the gate electrodes is formed. Thereafter, by reacting a metal film deposited on the silicide layer with the control gate electrode and the memory gate electrode, a silicide layer thicker than the former silicide layer is formed on each of the gate electrodes.

公开(公告)号：US09601541B2

公开(公告)日：2017-03-21

申请号：US15041116

申请日：2016-02-11

申请人： Renesas Electronics Corporation

发明人： Tadashi Yamaguchi

IPC分类号： H01L21/683 ,  H01L27/146

CPC分类号： H01L27/14689 ,  H01L21/6835 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14685 ,  H01L27/14698 ,  H01L2221/68327

摘要： An improvement is achieved in the performance of a semiconductor device. In a method of manufacturing the semiconductor device, in an n-type semiconductor substrate, a p-type well as a p-type semiconductor region forming a part of a photodiode is formed and a gate electrode of a transfer transistor is formed. Then, after an n-type well as an n-type semiconductor region forming the other part of the photodiode is formed, a microwave is applied to the semiconductor substrate to heat the semiconductor substrate. Thereafter, a drain region of the transfer transistor is formed.

公开(公告)号：US20150357370A1

公开(公告)日：2015-12-10

申请号：US14729226

申请日：2015-06-03

申请人： Renesas Electronics Corporation

发明人： Tadashi Yamaguchi

IPC分类号： H01L27/146 ,  H01L21/02 ,  H01L21/311

CPC分类号： H01L27/14689 ,  H01L21/02238 ,  H01L21/30604 ,  H01L21/31116 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14643

摘要： The present invention makes it possible to improve the performance of a semiconductor device.After anisotropic etching is applied to an insulating film covering a gate electrode of a transfer transistor and a sidewall spacer is formed over the sidewall of the gate electrode, a damaged layer formed in the interior of a semiconductor substrate by the anisotropic etching is removed by oxidizing the surface of the semiconductor substrate, forming a sacrificial oxide film, and removing the sacrificial oxide film.

摘要翻译： 本发明使得可以提高半导体器件的性能。 在对覆盖转移晶体管的栅电极的绝缘膜进行各向异性蚀刻之后，在栅电极的侧壁上形成侧壁间隔物，通过各向异性蚀刻在半导体衬底的内部形成的损伤层通过氧化 半导体衬底的表面，形成牺牲氧化膜，并除去牺牲氧化物膜。

公开(公告)号：US11335702B1

公开(公告)日：2022-05-17

申请号：US17097823

申请日：2020-11-13

申请人： RENESAS ELECTRONICS CORPORATION

发明人： Tadashi Yamaguchi

IPC分类号： H01L27/1159 ,  H01L29/78 ,  H01L29/66 ,  H01L21/28 ,  H01L21/02 ,  H01L27/11585 ,  H01L29/51

摘要： A semiconductor device includes a semiconductor substrate, an insulating film, a ferroelectric film, a first seed layer and a control gate electrode. The semiconductor substrate includes a source region and a drain region which are formed on a main surface of the semiconductor substrate. The insulating film is formed on the main surface of the semiconductor substrate such that the insulating film is positioned between the source region and the drain region in a plan view. The ferroelectric film is formed on the insulating film and includes hafnium and oxygen. The first seed layer is formed on the ferroelectric film. The control gate electrode is formed on the ferroelectric film. A material of the first seed layer includes at least one material of the ferroelectric film and at least one material of the first conductive film.