发明申请
- 专利标题： MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件的制造方法
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申请号： US14729226申请日： 2015-06-03
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公开(公告)号： US20150357370A1公开(公告)日： 2015-12-10
- 发明人: Tadashi Yamaguchi
- 申请人： Renesas Electronics Corporation
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 优先权： JP2014-116029 20140604
- 主分类号： H01L27/146
- IPC分类号： H01L27/146 ; H01L21/02 ; H01L21/311
摘要：
The present invention makes it possible to improve the performance of a semiconductor device.After anisotropic etching is applied to an insulating film covering a gate electrode of a transfer transistor and a sidewall spacer is formed over the sidewall of the gate electrode, a damaged layer formed in the interior of a semiconductor substrate by the anisotropic etching is removed by oxidizing the surface of the semiconductor substrate, forming a sacrificial oxide film, and removing the sacrificial oxide film.
公开/授权文献
- US09947715B2 Manufacturing method of semiconductor device 公开/授权日：2018-04-17
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