- 专利标题： Semiconductor device and method of manufacturing same
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申请号： US14683594申请日： 2015-04-10
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公开(公告)号： US09953858B2公开(公告)日： 2018-04-24
- 发明人: Tadashi Yamaguchi
- 申请人： Renesas Electronics Corporation
- 申请人地址： JP Tokyo
- 专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2014-083003 20140414
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/762 ; H01L21/02 ; H01L21/308 ; H01L27/092 ; H01L29/423 ; H01L29/66 ; H01L29/78 ; H01L29/10 ; H01L21/8238
摘要：
To provide a semiconductor device having improved performance. The semiconductor device has a first insulating film formed on the main surface of a semiconductor substrate and a second insulating film formed on the first insulating film. The semiconductor device further has a first opening portion penetrating through the second insulating film and reaching the first insulating film, a second opening portion penetrating through the first insulating film and reaching the semiconductor substrate, and a trench portion formed in the semiconductor substrate. A first opening width of the first opening portion and a second opening width of the second opening portion are greater than a trench width of the trench portion. The trench portion is closed by a third insulating film while leaving a space in the trench portion.
公开/授权文献
- US20150294898A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME 公开/授权日：2015-10-15
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