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公开(公告)号：US09496153B2
公开(公告)日：2016-11-15
申请号：US15045978
申请日：2016-02-17
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Eiji Hayashi , Kyo Go , Kozo Harada , Shinji Baba
CPC classification number: H01L23/49827 , H01L21/4853 , H01L21/563 , H01L21/6835 , H01L23/3142 , H01L23/3157 , H01L23/36 , H01L23/373 , H01L23/49811 , H01L23/49816 , H01L23/49822 , H01L23/49838 , H01L23/49894 , H01L23/562 , H01L24/11 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/743 , H01L24/81 , H01L2021/6015 , H01L2224/05001 , H01L2224/05008 , H01L2224/05009 , H01L2224/05022 , H01L2224/05023 , H01L2224/05024 , H01L2224/05025 , H01L2224/05124 , H01L2224/05572 , H01L2224/056 , H01L2224/11003 , H01L2224/13099 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2224/81193 , H01L2224/81205 , H01L2224/81801 , H01L2224/81909 , H01L2224/83102 , H01L2224/92125 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/0133 , H01L2924/014 , H01L2924/12042 , H01L2924/12044 , H01L2924/1306 , H01L2924/13091 , H01L2924/15174 , H01L2924/15184 , H01L2924/15311 , H01L2924/15312 , H01L2924/15724 , H01L2924/15747 , H01L2924/1579 , H01L2924/351 , H05K1/0366 , H05K3/4602 , H05K2201/029 , H01L2924/0132 , H01L2924/01014 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2924/0665 , H01L2924/00014
Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained.As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.
Abstract translation: 对于具有布线基板的半导体器件，通过其与布线基板进行倒装芯片接合的半导体芯片和粘附到半导体芯片的背面的散热器，并且省略了用于加强布线的加强件 基板并且保持散热器的表面平滑度，布线基板具有分别形成直径不同的通孔的多个绝缘基板，并且每个绝缘基板包含玻璃布。
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公开(公告)号：US08575757B2
公开(公告)日：2013-11-05
申请号：US13648876
申请日：2012-10-10
Applicant: Renesas Electronics Corporation
Inventor： Eiji Hayashi , Kyo Go , Kozo Harada , Shinji Baba
CPC classification number: H01L23/49827 , H01L21/4853 , H01L21/563 , H01L21/6835 , H01L23/3142 , H01L23/3157 , H01L23/36 , H01L23/373 , H01L23/49811 , H01L23/49816 , H01L23/49822 , H01L23/49838 , H01L23/49894 , H01L23/562 , H01L24/11 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/743 , H01L24/81 , H01L2021/6015 , H01L2224/05001 , H01L2224/05008 , H01L2224/05009 , H01L2224/05022 , H01L2224/05023 , H01L2224/05024 , H01L2224/05025 , H01L2224/05124 , H01L2224/05572 , H01L2224/056 , H01L2224/11003 , H01L2224/13099 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2224/81193 , H01L2224/81205 , H01L2224/81801 , H01L2224/81909 , H01L2224/83102 , H01L2224/92125 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/0133 , H01L2924/014 , H01L2924/12042 , H01L2924/12044 , H01L2924/1306 , H01L2924/13091 , H01L2924/15174 , H01L2924/15184 , H01L2924/15311 , H01L2924/15312 , H01L2924/15724 , H01L2924/15747 , H01L2924/1579 , H01L2924/351 , H05K1/0366 , H05K3/4602 , H05K2201/029 , H01L2924/0132 , H01L2924/01014 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2924/0665 , H01L2924/00014
Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.
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公开(公告)号：US10283444B2
公开(公告)日：2019-05-07
申请号：US15796746
申请日：2017-10-27
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Eiji Hayashi , Kyo Go , Kozo Harada , Shinji Baba
IPC: H01L23/498 , H01L23/31 , H01L23/373 , H01L23/00 , H01L21/48 , H01L23/46 , H05K3/46 , H01L21/683 , H01L21/56 , H01L23/36 , H05K1/03 , H01L21/60
Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.
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公开(公告)号：US08822269B2
公开(公告)日：2014-09-02
申请号：US14044497
申请日：2013-10-02
Applicant: Renesas Electronics Corporation
Inventor： Eiji Hayashi , Kyo Go , Kozo Harada , Shinji Baba
IPC: H01L21/00
CPC classification number: H01L23/49827 , H01L21/4853 , H01L21/563 , H01L21/6835 , H01L23/3142 , H01L23/3157 , H01L23/36 , H01L23/373 , H01L23/49811 , H01L23/49816 , H01L23/49822 , H01L23/49838 , H01L23/49894 , H01L23/562 , H01L24/11 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/743 , H01L24/81 , H01L2021/6015 , H01L2224/05001 , H01L2224/05008 , H01L2224/05009 , H01L2224/05022 , H01L2224/05023 , H01L2224/05024 , H01L2224/05025 , H01L2224/05124 , H01L2224/05572 , H01L2224/056 , H01L2224/11003 , H01L2224/13099 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2224/81193 , H01L2224/81205 , H01L2224/81801 , H01L2224/81909 , H01L2224/83102 , H01L2224/92125 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/0133 , H01L2924/014 , H01L2924/12042 , H01L2924/12044 , H01L2924/1306 , H01L2924/13091 , H01L2924/15174 , H01L2924/15184 , H01L2924/15311 , H01L2924/15312 , H01L2924/15724 , H01L2924/15747 , H01L2924/1579 , H01L2924/351 , H05K1/0366 , H05K3/4602 , H05K2201/029 , H01L2924/0132 , H01L2924/01014 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2924/0665 , H01L2924/00014
Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.
Abstract translation: 即使省略了加强件，也可以获得能够防止布线基板发生扭曲和变形的半导体装置。 对于具有布线基板的半导体器件，制作倒装芯片的布线基板的半导体芯片和附着在半导体芯片背面的散热器，省略了用于加强布线基板的加强板 并且保持散热器的表面平滑性，布线基板具有分别形成直径不同的通孔的多个绝缘基板，并且每个绝缘基板包含玻璃布。
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公开(公告)号：US09449854B2
公开(公告)日：2016-09-20
申请号：US15045978
申请日：2016-02-17
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Eiji Hayashi , Kyo Go , Kozo Harada , Shinji Baba
Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained.As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.
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Patent Agency Ranking
公开(公告)号：US09299681B2
公开(公告)日：2016-03-29
申请号：US14569423
申请日：2014-12-12
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Eiji Hayashi , Kyo Go , Kozo Harada , Shinji Baba
IPC: H01L21/00 , H01L23/00 , H01L21/48 , H01L21/56 , H01L21/683 , H01L23/36 , H01L23/498 , H05K3/46 , H05K1/03
CPC classification number: H01L23/49827 , H01L21/4853 , H01L21/563 , H01L21/6835 , H01L23/3142 , H01L23/3157 , H01L23/36 , H01L23/373 , H01L23/49811 , H01L23/49816 , H01L23/49822 , H01L23/49838 , H01L23/49894 , H01L23/562 , H01L24/11 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/743 , H01L24/81 , H01L2021/6015 , H01L2224/05001 , H01L2224/05008 , H01L2224/05009 , H01L2224/05022 , H01L2224/05023 , H01L2224/05024 , H01L2224/05025 , H01L2224/05124 , H01L2224/05572 , H01L2224/056 , H01L2224/11003 , H01L2224/13099 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2224/81193 , H01L2224/81205 , H01L2224/81801 , H01L2224/81909 , H01L2224/83102 , H01L2224/92125 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/0133 , H01L2924/014 , H01L2924/12042 , H01L2924/12044 , H01L2924/1306 , H01L2924/13091 , H01L2924/15174 , H01L2924/15184 , H01L2924/15311 , H01L2924/15312 , H01L2924/15724 , H01L2924/15747 , H01L2924/1579 , H01L2924/351 , H05K1/0366 , H05K3/4602 , H05K2201/029 , H01L2924/0132 , H01L2924/01014 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2924/0665 , H01L2924/00014
Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained.As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.
Abstract translation: 即使省略了加强件，也可以获得能够防止布线基板发生扭曲和变形的半导体装置。 对于具有布线基板的半导体器件，通过其与布线基板进行倒装芯片接合的半导体芯片和粘附到半导体芯片的背面的散热器，并且省略了用于加强布线的加强件 基板并且保持散热器的表面平滑度，布线基板具有分别形成直径不同的通孔的多个绝缘基板，并且每个绝缘基板包含玻璃布。
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公开(公告)号：US08963327B2
公开(公告)日：2015-02-24
申请号：US13872012
申请日：2013-04-26
Applicant: Renesas Electronics Corporation
Inventor： Kozo Harada , Shinji Baba , Masaki Watanabe , Satoshi Yamada
IPC: H01L23/498 , H01L21/56 , H01L23/00 , H01L23/367 , H01L23/50
CPC classification number: H01L24/81 , H01L21/56 , H01L21/563 , H01L23/3677 , H01L23/49811 , H01L23/49827 , H01L23/49838 , H01L23/50 , H01L24/13 , H01L24/14 , H01L24/16 , H01L2224/13082 , H01L2224/131 , H01L2224/13147 , H01L2224/14152 , H01L2224/14154 , H01L2224/16225 , H01L2224/16227 , H01L2224/16237 , H01L2224/16238 , H01L2224/32225 , H01L2224/73204 , H01L2224/81801 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/351 , H01L2924/00 , H01L2924/00014 , H01L2924/014
Abstract: A semiconductor device includes lands having an NSMD (non-solder mask defined) structure for mounting thereon solder balls placed in an inner area of a chip mounting area. The lands for mounting thereon solder balls are placed in an area of the back surface of a through-hole wiring board overlapping with a chip mounting area in a plan view. The semiconductor device is mounted on a mounting substrate with the balls.
Abstract translation: 半导体器件包括具有用于安装在芯片安装区域的内部区域中的焊球的NSMD（非阻焊掩模限定）结构的焊盘。 用于安装焊锡球的焊盘放置在平面图中与芯片安装区域重叠的通孔布线板的背面的区域中。 半导体器件安装在具有球的安装基板上。
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公开(公告)号：US08581410B2
公开(公告)日：2013-11-12
申请号：US13863241
申请日：2013-04-15
Applicant: Renesas Electronics Corporation
Inventor： Eiji Hayashi , Kyo Go , Kozo Harada , Shinji Baba
CPC classification number: H01L23/49827 , H01L21/4853 , H01L21/563 , H01L21/6835 , H01L23/3142 , H01L23/3157 , H01L23/36 , H01L23/373 , H01L23/49811 , H01L23/49816 , H01L23/49822 , H01L23/49838 , H01L23/49894 , H01L23/562 , H01L24/11 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/743 , H01L24/81 , H01L2021/6015 , H01L2224/05001 , H01L2224/05008 , H01L2224/05009 , H01L2224/05022 , H01L2224/05023 , H01L2224/05024 , H01L2224/05025 , H01L2224/05124 , H01L2224/05572 , H01L2224/056 , H01L2224/11003 , H01L2224/13099 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2224/81193 , H01L2224/81205 , H01L2224/81801 , H01L2224/81909 , H01L2224/83102 , H01L2224/92125 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/0133 , H01L2924/014 , H01L2924/12042 , H01L2924/12044 , H01L2924/1306 , H01L2924/13091 , H01L2924/15174 , H01L2924/15184 , H01L2924/15311 , H01L2924/15312 , H01L2924/15724 , H01L2924/15747 , H01L2924/1579 , H01L2924/351 , H05K1/0366 , H05K3/4602 , H05K2201/029 , H01L2924/0132 , H01L2924/01014 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2924/0665 , H01L2924/00014
Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.
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公开(公告)号：US09576890B2
公开(公告)日：2017-02-21
申请号：US15241777
申请日：2016-08-19
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Eiji Hayashi , Kyo Go , Kozo Harada , Shinji Baba
IPC: H01L23/48 , H01L23/52 , H01L29/40 , H01L23/498 , H01L23/31 , H01L21/56 , H01L23/373
CPC classification number: H01L23/49827 , H01L21/4853 , H01L21/563 , H01L21/6835 , H01L23/3142 , H01L23/3157 , H01L23/36 , H01L23/373 , H01L23/49811 , H01L23/49816 , H01L23/49822 , H01L23/49838 , H01L23/49894 , H01L23/562 , H01L24/11 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/743 , H01L24/81 , H01L2021/6015 , H01L2224/05001 , H01L2224/05008 , H01L2224/05009 , H01L2224/05022 , H01L2224/05023 , H01L2224/05024 , H01L2224/05025 , H01L2224/05124 , H01L2224/05572 , H01L2224/056 , H01L2224/11003 , H01L2224/13099 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2224/81193 , H01L2224/81205 , H01L2224/81801 , H01L2224/81909 , H01L2224/83102 , H01L2224/92125 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/0133 , H01L2924/014 , H01L2924/12042 , H01L2924/12044 , H01L2924/1306 , H01L2924/13091 , H01L2924/15174 , H01L2924/15184 , H01L2924/15311 , H01L2924/15312 , H01L2924/15724 , H01L2924/15747 , H01L2924/1579 , H01L2924/351 , H05K1/0366 , H05K3/4602 , H05K2201/029 , H01L2924/0132 , H01L2924/01014 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2924/0665 , H01L2924/00014
Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained.As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.
Abstract translation: 对于具有布线基板的半导体器件，通过其与布线基板进行倒装芯片接合的半导体芯片和粘附到半导体芯片的背面的散热器，并且省略了用于加强布线的加强件 基板并且保持散热器的表面平滑度，布线基板具有分别形成直径不同的通孔的多个绝缘基板，并且每个绝缘基板包含玻璃布。
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公开(公告)号：US08928147B2
公开(公告)日：2015-01-06
申请号：US14338175
申请日：2014-07-22
Applicant: Renesas Electronics Corporation
Inventor： Eiji Hayashi , Kyo Go , Kozo Harada , Shinji Baba
IPC: H01L23/48 , H01L23/52 , H01L29/40 , H01L23/498
CPC classification number: H01L23/49827 , H01L21/4853 , H01L21/563 , H01L21/6835 , H01L23/3142 , H01L23/3157 , H01L23/36 , H01L23/373 , H01L23/49811 , H01L23/49816 , H01L23/49822 , H01L23/49838 , H01L23/49894 , H01L23/562 , H01L24/11 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/743 , H01L24/81 , H01L2021/6015 , H01L2224/05001 , H01L2224/05008 , H01L2224/05009 , H01L2224/05022 , H01L2224/05023 , H01L2224/05024 , H01L2224/05025 , H01L2224/05124 , H01L2224/05572 , H01L2224/056 , H01L2224/11003 , H01L2224/13099 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2224/81193 , H01L2224/81205 , H01L2224/81801 , H01L2224/81909 , H01L2224/83102 , H01L2224/92125 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/0133 , H01L2924/014 , H01L2924/12042 , H01L2924/12044 , H01L2924/1306 , H01L2924/13091 , H01L2924/15174 , H01L2924/15184 , H01L2924/15311 , H01L2924/15312 , H01L2924/15724 , H01L2924/15747 , H01L2924/1579 , H01L2924/351 , H05K1/0366 , H05K3/4602 , H05K2201/029 , H01L2924/0132 , H01L2924/01014 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2924/0665 , H01L2924/00014
Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substract, a semiconductor chip by which the flip chip was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.
Abstract translation: 即使省略了加强件，也可以获得能够防止布线基板发生扭曲和变形的半导体装置。 对于具有布线基底的半导体器件，制作倒装芯片的布线基板的半导体芯片和附着在半导体芯片背面的散热器，省略了用于加强布线基板的加强板 并且保持散热器的表面平滑性，布线基板具有分别形成直径不同的通孔的多个绝缘基板，并且每个绝缘基板包含玻璃布。
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