公开(公告)号：US09496153B2

公开(公告)日：2016-11-15

申请号：US15045978

申请日：2016-02-17

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Eiji Hayashi ,  Kyo Go ,  Kozo Harada ,  Shinji Baba

IPC: H01L21/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/60

CPC classification number: H01L23/49827 ,  H01L21/4853 ,  H01L21/563 ,  H01L21/6835 ,  H01L23/3142 ,  H01L23/3157 ,  H01L23/36 ,  H01L23/373 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49894 ,  H01L23/562 ,  H01L24/11 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/743 ,  H01L24/81 ,  H01L2021/6015 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05024 ,  H01L2224/05025 ,  H01L2224/05124 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/11003 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81193 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/81909 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15174 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/1579 ,  H01L2924/351 ,  H05K1/0366 ,  H05K3/4602 ,  H05K2201/029 ,  H01L2924/0132 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/0665 ,  H01L2924/00014

Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained.As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.

Abstract translation: 对于具有布线基板的半导体器件，通过其与布线基板进行倒装芯片接合的半导体芯片和粘附到半导体芯片的背面的散热器，并且省略了用于加强布线的加强件 基板并且保持散热器的表面平滑度，布线基板具有分别形成直径不同的通孔的多个绝缘基板，并且每个绝缘基板包含玻璃布。

公开(公告)号：US08575757B2

公开(公告)日：2013-11-05

申请号：US13648876

申请日：2012-10-10

Applicant: Renesas Electronics Corporation

Inventor： Eiji Hayashi ,  Kyo Go ,  Kozo Harada ,  Shinji Baba

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L23/49827 ,  H01L21/4853 ,  H01L21/563 ,  H01L21/6835 ,  H01L23/3142 ,  H01L23/3157 ,  H01L23/36 ,  H01L23/373 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49894 ,  H01L23/562 ,  H01L24/11 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/743 ,  H01L24/81 ,  H01L2021/6015 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05024 ,  H01L2224/05025 ,  H01L2224/05124 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/11003 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81193 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/81909 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15174 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/1579 ,  H01L2924/351 ,  H05K1/0366 ,  H05K3/4602 ,  H05K2201/029 ,  H01L2924/0132 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/0665 ,  H01L2924/00014

Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.

公开(公告)号：US10283444B2

公开(公告)日：2019-05-07

申请号：US15796746

申请日：2017-10-27

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Eiji Hayashi ,  Kyo Go ,  Kozo Harada ,  Shinji Baba

IPC: H01L23/498 ,  H01L23/31 ,  H01L23/373 ,  H01L23/00 ,  H01L21/48 ,  H01L23/46 ,  H05K3/46 ,  H01L21/683 ,  H01L21/56 ,  H01L23/36 ,  H05K1/03 ,  H01L21/60

Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.

公开(公告)号：US08822269B2

公开(公告)日：2014-09-02

申请号：US14044497

申请日：2013-10-02

Applicant: Renesas Electronics Corporation

Inventor： Eiji Hayashi ,  Kyo Go ,  Kozo Harada ,  Shinji Baba

IPC: H01L21/00

CPC classification number: H01L23/49827 ,  H01L21/4853 ,  H01L21/563 ,  H01L21/6835 ,  H01L23/3142 ,  H01L23/3157 ,  H01L23/36 ,  H01L23/373 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49894 ,  H01L23/562 ,  H01L24/11 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/743 ,  H01L24/81 ,  H01L2021/6015 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05024 ,  H01L2224/05025 ,  H01L2224/05124 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/11003 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81193 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/81909 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15174 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/1579 ,  H01L2924/351 ,  H05K1/0366 ,  H05K3/4602 ,  H05K2201/029 ,  H01L2924/0132 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/0665 ,  H01L2924/00014

Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.

Abstract translation: 即使省略了加强件，也可以获得能够防止布线基板发生扭曲和变形的半导体装置。 对于具有布线基板的半导体器件，制作倒装芯片的布线基板的半导体芯片和附着在半导体芯片背面的散热器，省略了用于加强布线基板的加强板 并且保持散热器的表面平滑性，布线基板具有分别形成直径不同的通孔的多个绝缘基板，并且每个绝缘基板包含玻璃布。

公开(公告)号：US09576890B2

公开(公告)日：2017-02-21

申请号：US15241777

申请日：2016-08-19

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Eiji Hayashi ,  Kyo Go ,  Kozo Harada ,  Shinji Baba

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/498 ,  H01L23/31 ,  H01L21/56 ,  H01L23/373

CPC classification number: H01L23/49827 ,  H01L21/4853 ,  H01L21/563 ,  H01L21/6835 ,  H01L23/3142 ,  H01L23/3157 ,  H01L23/36 ,  H01L23/373 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49894 ,  H01L23/562 ,  H01L24/11 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/743 ,  H01L24/81 ,  H01L2021/6015 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05024 ,  H01L2224/05025 ,  H01L2224/05124 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/11003 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81193 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/81909 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15174 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/1579 ,  H01L2924/351 ,  H05K1/0366 ,  H05K3/4602 ,  H05K2201/029 ,  H01L2924/0132 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/0665 ,  H01L2924/00014

Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained.As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.

Abstract translation: 对于具有布线基板的半导体器件，通过其与布线基板进行倒装芯片接合的半导体芯片和粘附到半导体芯片的背面的散热器，并且省略了用于加强布线的加强件 基板并且保持散热器的表面平滑度，布线基板具有分别形成直径不同的通孔的多个绝缘基板，并且每个绝缘基板包含玻璃布。

公开(公告)号：US08928147B2

公开(公告)日：2015-01-06

申请号：US14338175

申请日：2014-07-22

Applicant: Renesas Electronics Corporation

Inventor： Eiji Hayashi ,  Kyo Go ,  Kozo Harada ,  Shinji Baba

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/498

CPC classification number: H01L23/49827 ,  H01L21/4853 ,  H01L21/563 ,  H01L21/6835 ,  H01L23/3142 ,  H01L23/3157 ,  H01L23/36 ,  H01L23/373 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49894 ,  H01L23/562 ,  H01L24/11 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/743 ,  H01L24/81 ,  H01L2021/6015 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05024 ,  H01L2224/05025 ,  H01L2224/05124 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/11003 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81193 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/81909 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15174 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/1579 ,  H01L2924/351 ,  H05K1/0366 ,  H05K3/4602 ,  H05K2201/029 ,  H01L2924/0132 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/0665 ,  H01L2924/00014

Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substract, a semiconductor chip by which the flip chip was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.

Abstract translation: 即使省略了加强件，也可以获得能够防止布线基板发生扭曲和变形的半导体装置。 对于具有布线基底的半导体器件，制作倒装芯片的布线基板的半导体芯片和附着在半导体芯片背面的散热器，省略了用于加强布线基板的加强板 并且保持散热器的表面平滑性，布线基板具有分别形成直径不同的通孔的多个绝缘基板，并且每个绝缘基板包含玻璃布。

公开(公告)号：US10714415B2

公开(公告)日：2020-07-14

申请号：US16359485

申请日：2019-03-20

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Eiji Hayashi ,  Kyo Go ,  Kozo Harada ,  Shinji Baba

IPC: H01L23/498 ,  H01L23/00 ,  H01L21/683 ,  H01L23/36 ,  H05K3/46 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/373 ,  H05K1/03 ,  H01L21/60

Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.

公开(公告)号：US09831166B2

公开(公告)日：2017-11-28

申请号：US15398444

申请日：2017-01-04

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Eiji Hayashi ,  Kyo Go ,  Kozo Harada ,  Shinji Baba

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/498 ,  H01L23/31 ,  H01L21/56 ,  H01L23/373

CPC classification number: H01L23/49827 ,  H01L21/4853 ,  H01L21/563 ,  H01L21/6835 ,  H01L23/3142 ,  H01L23/3157 ,  H01L23/36 ,  H01L23/373 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49894 ,  H01L23/562 ,  H01L24/11 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/743 ,  H01L24/81 ,  H01L2021/6015 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05024 ,  H01L2224/05025 ,  H01L2224/05124 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/11003 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81193 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/81909 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15174 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/1579 ,  H01L2924/351 ,  H05K1/0366 ,  H05K3/4602 ,  H05K2201/029 ,  H01L2924/0132 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/0665 ,  H01L2924/00014

Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.

公开(公告)号：US08461688B2

公开(公告)日：2013-06-11

申请号：US13648876

申请日：2012-10-10

Applicant: Renesas Electronics Corporation

Inventor： Eiji Hayashi ,  Kyo Go ,  Kozo Harada ,  Shinji Baba

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.

公开(公告)号：US09449854B2

公开(公告)日：2016-09-20

申请号：US15045978

申请日：2016-02-17

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Eiji Hayashi ,  Kyo Go ,  Kozo Harada ,  Shinji Baba

IPC: H01L21/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/60

Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained.As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.