公开(公告)号：US20190312152A1

公开(公告)日：2019-10-10

申请号：US15946628

申请日：2018-04-05

Applicant: QUALCOMM Incorporated

Inventor： Fabio Alessio MARINO ,  Sinan GOKTEPELI ,  Narasimhulu KANIKE ,  Qingqing LIANG ,  Paolo MENEGOLI ,  Francesco CAROBOLANTE ,  Aristotele HADJICHRISTOS

IPC: H01L29/93 ,  H01L27/12 ,  H01L29/36

Abstract: Certain aspects of the present disclosure provide semiconductor variable capacitors. One example semiconductor variable capacitor generally includes a semiconductor region, a first insulator region disposed below the semiconductor region, a first non-insulative region disposed below the first insulator region, a second non-insulative region disposed adjacent to the semiconductor region, and a third non-insulative region disposed adjacent to the semiconductor region, wherein the semiconductor region is disposed between the second non-insulative region and the third non-insulative region. In certain aspects, the semiconductor variable capacitor may include a second insulator region disposed above the semiconductor region and a second semiconductor region disposed above the second insulator region.

公开(公告)号：US20180083472A1

公开(公告)日：2018-03-22

申请号：US15267597

申请日：2016-09-16

Applicant: QUALCOMM Incorporated

Inventor： Paolo MENEGOLI ,  Francesco CAROBOLANTE ,  Fabio Alessio MARINO

IPC: H02J7/02 ,  H02J7/04 ,  H02J50/12

CPC classification number: H02J7/025 ,  H01G7/06 ,  H02J7/045 ,  H02J7/345 ,  H02J50/12 ,  H02J50/80 ,  H02J50/90 ,  Y02T10/7022

Abstract: Techniques for controlling a resonant network are disclosed. An example of an apparatus for varying capacitance in a resonant network includes a variable capacitor circuit configured to vary a capacitance in response to a control signal, at least one biasing component operably coupled to the variable capacitor circuit, and a control circuit configured to generate the control signal, such that the control signal includes a first tuning value corresponding to a first capacitance value, and output the control signal at the first tuning value to reduce an impedance of the at least one biasing component and vary the capacitance of the variable capacitor circuit, such that the impedance of the at least one biasing component subsequently increases when the first capacitance value is realized.

公开(公告)号：US20190280125A1

公开(公告)日：2019-09-12

申请号：US16423472

申请日：2019-05-28

Applicant: QUALCOMM Incorporated

Inventor： Narasimhulu KANIKE ,  Qingqing LIANG ,  Fabio Alessio MARINO ,  Francesco CAROBOLANTE

IPC: H01L29/78 ,  H01L29/93 ,  H01L27/092 ,  H01L23/522 ,  H01L29/06 ,  H01L29/66 ,  H01L23/528 ,  H01L27/08

Abstract: Certain aspects of the present disclosure generally relate to a semiconductor device and techniques for fabricating a semiconductor device. In certain aspects, the semiconductor device includes a fin, a first non-insulative region disposed adjacent to a first side of the fin, and a second non-insulative region disposed adjacent to a second side of the fin. In certain aspects, the first non-insulative region and the second non-insulative region are separated by a trench, at least a portion of the trench being filled with a dielectric material disposed around the fin.

公开(公告)号：US20180342620A1

公开(公告)日：2018-11-29

申请号：US15602915

申请日：2017-05-23

Applicant: QUALCOMM Incorporated

Inventor： Narasimhulu KANIKE ,  Qingqing LIANG ,  Fabio Alessio MARINO ,  Francesco CAROBOLANTE

IPC: H01L29/78 ,  H01L23/522 ,  H01L23/528 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L29/7851 ,  H01L23/5226 ,  H01L23/5283 ,  H01L27/0805 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/66795 ,  H01L29/7855 ,  H01L29/93

Abstract: Certain aspects of the present disclosure generally relate to a semiconductor device and techniques for fabricating a semiconductor device. In certain aspects, the semiconductor device includes a fin, a first non-insulative region disposed adjacent to a first side of the fin, and a second non-insulative region disposed adjacent to a second side of the fin. In certain aspects, the first non-insulative region and the second non-insulative region are separated by a trench, at least a portion of the trench being filled with a dielectric material disposed around the fin.

公开(公告)号：US20180006495A1

公开(公告)日：2018-01-04

申请号：US15197407

申请日：2016-06-29

Applicant: QUALCOMM Incorporated

Inventor： Francesco CAROBOLANTE ,  William Henry VON NOVAK, III

IPC: H02J50/12 ,  H02J7/02 ,  H02J50/80

CPC classification number: H02J50/12 ,  H02J7/025 ,  H02J50/10 ,  H02J50/40 ,  H02J50/80 ,  H02J50/90 ,  H02J2007/0096

Abstract: An apparatus and method for transmission of wireless power to a plurality of chargeable devices. The apparatus and method include and provide for a wireless power transmitter including a power transmitting element configured to use a current at a first level to wirelessly transmit power sufficient to provide power to one or more chargeable devices positioned within a charging region. The apparatus and method further include and provide for a controller to detect a subsequent chargeable device positioned within the charging region and to adjust the current from the first level to a default level prior to communication with the subsequent chargeable device.

公开(公告)号：US20180240915A1

公开(公告)日：2018-08-23

申请号：US15438400

申请日：2017-02-21

Applicant: QUALCOMM Incorporated

Inventor： Fabio Alessio MARINO ,  Paolo MENEGOLI ,  Narasimhulu KANIKE ,  Francesco CAROBOLANTE

IPC: H01L29/93 ,  H01L27/08 ,  H01L27/12

CPC classification number: H01L29/93 ,  H01L27/0808 ,  H01L27/1203 ,  H01L29/94

Abstract: Certain aspects of the present disclosure generally relate to techniques for adjusting or setting a capacitance-versus-voltage (C-V) characteristic of a variable capacitor. For example, certain aspects of the present disclosure provide a capacitor device. The capacitor device generally includes a first variable capacitor and a second variable capacitor, each comprising a first terminal and a second terminal. In certain aspects, the second terminal of the second variable capacitor is coupled to the first terminal of the first variable capacitor, and the first terminal of the first variable capacitor is coupled to at least one biasing voltage node. In some cases, a decoupling capacitor may be coupled to the first terminal of the first variable capacitor.

公开(公告)号：US20180233605A1

公开(公告)日：2018-08-16

申请号：US15850118

申请日：2017-12-21

Applicant: QUALCOMM Incorporated

Inventor： Fabio Alessio MARINO ,  Paolo MENEGOLI ,  Narasimhulu KANIKE ,  Francesco CAROBOLANTE ,  Qingqing LIANG

IPC: H01L29/93 ,  H01L21/285 ,  H01L21/28 ,  H01L29/66 ,  H01L29/45 ,  H01L29/49

CPC classification number: H01L29/93 ,  H01L21/28052 ,  H01L21/28518 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/66174 ,  H01L29/66189

Abstract: Certain aspects of the present disclosure provide a semiconductor variable capacitor. The semiconductor variable capacitor generally includes a first non-insulative region disposed above a semiconductor region, and a second non-insulative region disposed adjacent to the semiconductor region. In certain aspects, the semiconductor variable capacitor also includes a first silicide layer disposed above the second non-insulative region, wherein the first silicide layer overlaps at least a portion of the semiconductor region. In certain aspects, a control region may be disposed adjacent to the semiconductor region such that a capacitance between the first non-insulative region and the second non-insulative region is configured to be adjusted by varying a control voltage applied to the control region.

公开(公告)号：US20180233604A1

公开(公告)日：2018-08-16

申请号：US15431623

申请日：2017-02-13

Applicant: QUALCOMM Incorporated

Inventor： Shiqun GU ,  Gengming TAO ,  Richard HAMMOND ,  Ranadeep DUTTA ,  Matthew Michael NOWAK ,  Francesco CAROBOLANTE

IPC: H01L29/93 ,  H01L29/20 ,  H01L29/22 ,  H01L29/47 ,  H01L29/737 ,  H01L29/66 ,  H01L27/06 ,  H01L21/822 ,  H01L23/00 ,  H01L23/66 ,  H03H11/34 ,  H03H11/04

CPC classification number: H01L29/93 ,  H01L21/8221 ,  H01L23/66 ,  H01L24/13 ,  H01L27/0629 ,  H01L27/0688 ,  H01L29/20 ,  H01L29/22 ,  H01L29/47 ,  H01L29/66174 ,  H01L29/66242 ,  H01L29/7371 ,  H01L2224/13025 ,  H03H11/04 ,  H03H11/342

Abstract: A tunable capacitor may include a first terminal having a first semiconductor component with a first polarity. The tunable capacitor may also include a second terminal having a second semiconductor component with a second polarity. The second component may be adjacent to the first semiconductor component. The tunable capacitor may further include a first conductive material electrically coupled to a first depletion region at a first sidewall of the first semiconductor component.

公开(公告)号：US20190386154A1

公开(公告)日：2019-12-19

申请号：US16007575

申请日：2018-06-13

Applicant: QUALCOMM Incorporated

Inventor： Gengming TAO ,  Xia LI ,  Bin YANG ,  Qingqing LIANG ,  Francesco CAROBOLANTE

IPC: H01L29/93 ,  H01L29/20 ,  H01L29/36 ,  H01L29/66

Abstract: A variable capacitor includes a mesa on a substrate. The mesa has multiple III-V semiconductor layers and includes a first side and a second side opposite the first side. The first side has a first sloped portion and a first horizontal portion. The second side has a second sloped portion and a second horizontal portion. A control terminal is on a third side of the mesa. A first terminal is on the first side of the mesa. The first terminal is disposed on the first horizontal portion and the first sloped portion. A second terminal is also on the substrate.

公开(公告)号：US20190326448A1

公开(公告)日：2019-10-24

申请号：US15957484

申请日：2018-04-19

Applicant: QUALCOMM Incorporated

Inventor： Sinan GOKTEPELI ,  Fabio Alessio MARINO ,  Narasimhulu KANIKE ,  Plamen Vassilev KOLEV ,  Qingqing LIANG ,  Paolo MENEGOLI ,  Francesco CAROBOLANTE ,  Aristotele HADJICHRISTOS

IPC: H01L29/93 ,  H01L29/45 ,  H01L29/06

Abstract: Certain aspects of the present disclosure provide a semiconductor device. One example semiconductor device generally includes a semiconductor region, an insulative layer, a first terminal, and a first non-insulative region coupled to the first terminal, the insulative layer being disposed between the first non-insulative region and the semiconductor region. In certain aspects, the insulative layer is disposed adjacent to a first side of the semiconductor region. In certain aspects, the semiconductor device also includes a second terminal, and a first silicide layer coupled to the second terminal and disposed adjacent to a second side of the semiconductor region, the first side and the second side being opposite sides of the semiconductor region.