公开(公告)号：US08674430B2

公开(公告)日：2014-03-18

申请号：US13428111

申请日：2012-03-23

申请人： Naoki Yasuda ,  Masaru Kito

发明人： Naoki Yasuda ,  Masaru Kito

IPC分类号： H01L29/792

CPC分类号： H01L27/1157 ,  H01L21/28282 ,  H01L27/11568 ,  H01L27/11573 ,  H01L27/11582 ,  H01L29/511 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/792 ,  H01L29/7926

摘要： According to one embodiment, a control gate is formed on the semiconductor substrate and includes a cylindrical through hole. A block insulating film, a charge storage film, a tunnel insulating film, and a semiconductor layer are formed on a side surface of the control gate inside the through hole. The tunnel insulating film comprises a first insulating film having SiO2 as a base material and containing an element that lowers a band gap of the base material by being added. A density and a density gradient of the element monotonously increase from the semiconductor layer toward the charge storage film.

摘要翻译： 根据一个实施例，控制栅极形成在半导体衬底上并且包括圆柱形通孔。 在通孔内的控制栅极的侧表面上形成块绝缘膜，电荷存储膜，隧道绝缘膜和半导体层。 隧道绝缘膜包括具有SiO 2作为基材的第一绝缘膜，并且包含通过添加来降低基材的带隙的元素。 元素的密度和密度梯度从半导体层向电荷存储膜单调增加。

公开(公告)号：US08928062B2

公开(公告)日：2015-01-06

申请号：US12408796

申请日：2009-03-23

申请人： Naoki Yasuda

发明人： Naoki Yasuda

IPC分类号： H01L29/792 ,  H01L29/423 ,  H01L27/12 ,  H01L29/51 ,  H01L21/84 ,  H01L29/06 ,  H01L21/28 ,  H01L21/762

CPC分类号： H01L29/792 ,  H01L21/28282 ,  H01L21/76243 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0653 ,  H01L29/4234 ,  H01L29/513

摘要： A nonvolatile semiconductor memory device includes a plurality of nonvolatile memory cells formed on a semiconductor substrate, each memory cell including source and drain regions separately formed on a surface portion of the substrate, buried insulating films formed in portions of the substrate that lie under the source and drain regions and each having a dielectric constant smaller than that of the substrate, a tunnel insulating film formed on a channel region formed between the source and drain regions, a charge storage layer formed of a dielectric body on the tunnel insulating film, a block insulating film formed on the charge storage layer, and a control gate electrode formed on the block insulating film.

摘要翻译： 非易失性半导体存储器件包括形成在半导体衬底上的多个非易失性存储器单元，每个存储单元包括分别形成在衬底的表面部分上的源极和漏极区域，形成在衬底的位于源极的部分的掩埋绝缘膜 漏极区和介电常数小于衬底的介电常数，形成在源极和漏极区之间的沟道区上形成的隧道绝缘膜，在隧道绝缘膜上由电介质体形成的电荷存储层，块 形成在电荷存储层上的绝缘膜，以及形成在所述块绝缘膜上的控制栅电极。

公开(公告)号：US08698313B2

公开(公告)日：2014-04-15

申请号：US13457054

申请日：2012-04-26

申请人： Izumi Hirano ,  Shosuke Fujii ,  Yuichiro Mitani ,  Naoki Yasuda

发明人： Izumi Hirano ,  Shosuke Fujii ,  Yuichiro Mitani ,  Naoki Yasuda

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L29/792 ,  H01L21/28282 ,  H01L29/4234 ,  H01L29/513

摘要： A nonvolatile semiconductor memory apparatus according to an embodiment includes: a semiconductor layer; a first insulating film formed on the semiconductor layer, the first insulating film being a single-layer film containing silicon oxide or silicon oxynitride; a charge trapping film formed on the first insulating film; a second insulating film formed on the charge trapping film; and a control gate electrode formed on the second insulating film. A metal oxide exists in an interface between the first insulating film and the charge trapping film, the metal oxide comprises material which is selected from the group of Al2O3, HfO2, ZrO2, TiO2, and MgO, the material is stoichiometric composition, and the charge trapping film includes material different from the material of the metal oxide.

摘要翻译： 根据实施例的非易失性半导体存储装置包括：半导体层; 形成在所述半导体层上的第一绝缘膜，所述第一绝缘膜是含有氧化硅或氮氧化硅的单层膜; 形成在第一绝缘膜上的电荷捕获膜; 形成在电荷捕获膜上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制栅电极。 金属氧化物存在于第一绝缘膜和电荷捕获膜之间的界面中，金属氧化物包括选自Al 2 O 3，HfO 2，ZrO 2，TiO 2和MgO的材料，该材料为化学计量组成，并且电荷 捕获膜包括与金属氧化物的材料不同的材料。

公开(公告)号：US08288294B2

公开(公告)日：2012-10-16

申请号：US13001256

申请日：2009-06-25

申请人： Hidetaka Kafuku ,  Toshihito Fujiwara ,  Toshihiko Nishimori ,  Tadashi Shimazu ,  Naoki Yasuda ,  Hideharu Nobutoki ,  Teruhiko Kumada ,  Takuya Kamiyama ,  Tetsuya Yamamoto ,  Shinya Shibata

发明人： Hidetaka Kafuku ,  Toshihito Fujiwara ,  Toshihiko Nishimori ,  Tadashi Shimazu ,  Naoki Yasuda ,  Hideharu Nobutoki ,  Teruhiko Kumada ,  Takuya Kamiyama ,  Tetsuya Yamamoto ,  Shinya Shibata

IPC分类号： H01L21/31

CPC分类号： H01L21/318 ,  C23C16/342 ,  C23C16/507 ,  H01L21/02112 ,  H01L21/02274 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object is to provide an insulating film for a semiconductor device which has characteristics of a low permittivity, a low leakage current, and a high mechanical strength, undergoes less change in these characteristics with the elapse of time, and has an excellent water resistance, as well as to provide a process and an apparatus for producing the insulating film for a semiconductor device, a semiconductor device, and a process for producing the semiconductor device. A gas containing a raw material gas which gasified a predetermined alkylborazine compound is supplied in a chamber (2); an electromagnetic wave is introduced into the chamber (2) using with an inductive coupling type plasma generation mechanism (4, 5, 6) to convert the gas into a plasma; a substrate (8) is placed in a plasma diffusion region of the plasma; gas-phase polymerization is performed with borazine skeletal molecules, as a fundamental unit, dissociated from the alkylborazine compound by the plasma so as to form the insulating film for semiconductor devices on the substrate (8).

摘要翻译： 本发明的目的是提供具有低介电常数，低漏电流和高机械强度特性的半导体器件用绝缘膜，随着时间的推移，这些特性的变化变小，具有优异的耐水性， 以及提供用于制造用于半导体器件的绝缘膜，半导体器件和用于制造半导体器件的工艺的工艺和设备。 在室（2）内供给含有气化了规定的烷基
硼氮化合物的原料气体的气体。 使用电感耦合型等离子体产生机构（4,5,6）将电磁波引入腔室（2），以将气体转换成等离子体; 将衬底（8）放置在等离子体的等离子体扩散区域中; 用作为基本单元的环硼烷骨架分子进行气相聚合，通过等离子体与烷基硼氮化合物离解，从而在基板（8）上形成用于半导体器件的绝缘膜。

公开(公告)号：US08154072B2

公开(公告)日：2012-04-10

申请号：US12403493

申请日：2009-03-13

申请人： Masahiro Koike ,  Yuichiro Mitani ,  Tatsuo Shimizu ,  Naoki Yasuda ,  Yasushi Nakasaki ,  Akira Nishiyama

发明人： Masahiro Koike ,  Yuichiro Mitani ,  Tatsuo Shimizu ,  Naoki Yasuda ,  Yasushi Nakasaki ,  Akira Nishiyama

IPC分类号： H01L29/788

CPC分类号： H01L29/7881 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/11521 ,  H01L29/513

摘要： A nonvolatile semiconductor memory apparatus includes: a source and drain regions formed at a distance from each other in a semiconductor layer; a first insulating film formed on the semiconductor layer located between the source region and the drain region, the first insulating film including a first insulating layer and a second insulating layer formed on the first insulating layer and having a higher dielectric constant than the first insulating layer, the second insulating layer having a first site performing hole trapping and releasing, the first site being formed by adding an element different from a base material to the second insulating film, the first site being located at a lower level than a Fermi level of a material forming the semiconductor layer; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film.

摘要翻译： 一种非易失性半导体存储器件，包括：在半导体层中形成为彼此间隔一定距离的源区和漏区; 形成在位于源极区域和漏极区域之间的半导体层上的第一绝缘膜，所述第一绝缘膜包括形成在所述第一绝缘层上并具有比所述第一绝缘层高的介电常数的第一绝缘层和第二绝缘层 所述第二绝缘层具有进行孔捕获和释放的第一部位，所述第一部位通过将不同于基材的元素添加到所述第二绝缘膜而形成，所述第一部位位于比所述第二绝缘膜的费米能级更低的水平 形成半导体层的材料; 形成在所述第一绝缘膜上的电荷存储膜; 形成在电荷存储膜上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制栅电极。

公开(公告)号：US08058681B2

公开(公告)日：2011-11-15

申请号：US12405626

申请日：2009-03-17

申请人： Masao Shingu ,  Jun Fujiki ,  Naoki Yasuda ,  Koichi Muraoka

发明人： Masao Shingu ,  Jun Fujiki ,  Naoki Yasuda ,  Koichi Muraoka

IPC分类号： H01L29/792

CPC分类号： H01L29/7883 ,  G11C11/40 ,  G11C16/0408 ,  G11C16/0466 ,  G11C16/10 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  H01L21/28282 ,  H01L27/11521 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/4234 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/788 ,  H01L29/792

摘要： According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory element including: a semiconductor substrate including: a source region; a drain region; and a channel region; a lower insulating film that is formed on the channel region; a charge storage film that is formed on the lower insulating film and that stores data; an upper insulating film that is formed on the charge storage film; and a control gate that is formed on the upper insulating film, wherein the upper insulating film includes: a first insulting film; and a second insulating film that is laminated with the first insulating film, and wherein the first insulating film is formed to have a trap level density larger than that of the second insulating film.

摘要翻译： 根据本发明的一个方面，提供了一种非易失性半导体存储元件，包括：半导体衬底，包括：源极区; 漏区; 和通道区域; 形成在沟道区上的下绝缘膜; 电荷存储膜，形成在下绝缘膜上并存储数据; 形成在电荷存储膜上的上绝缘膜; 以及形成在所述上绝缘膜上的控制栅极，其中所述上绝缘膜包括：第一绝缘膜; 以及与所述第一绝缘膜层压的第二绝缘膜，并且其中所述第一绝缘膜形成为具有比所述第二绝缘膜的陷阱级密度大的陷阱级密度。

公开(公告)号：US07989871B2

公开(公告)日：2011-08-02

申请号：US11680945

申请日：2007-03-01

申请人： Naoki Yasuda

发明人： Naoki Yasuda

IPC分类号： H01L29/788

CPC分类号： H01L29/513 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42324 ,  H01L29/4234 ,  H01L29/7881 ,  H01L29/792

摘要： A nonvolatile semiconductor memory device includes a first insulating film on a channel, a floating gate electrode on the first insulating film, a second insulating film on the floating gate electrode, and a control gate electrode on the second insulating film. Each of the first and second insulating films comprises at least two layers, one layer directly in contact with the floating gate electrode is formed by an insulating material (A) including a metal element having a d orbital, and the other at least one layer is formed by an insulating material (B) chiefly including one of a metal element without the d orbital, and a semiconductor element.

摘要翻译： 非易失性半导体存储器件包括沟道上的第一绝缘膜，第一绝缘膜上的浮栅，浮栅上的第二绝缘膜和第二绝缘膜上的控制栅电极。 第一绝缘膜和第二绝缘膜中的每一个包括至少两个层，与浮动栅极直接接触的一个层由包括具有轨道的金属元素的绝缘材料（A）形成，并且形成另一个层 通过主要包括没有d轨道的金属元素之一的绝缘材料（B）和半导体元件。

公开(公告)号：US07981790B2

公开(公告)日：2011-07-19

申请号：US12683949

申请日：2010-01-07

申请人： Teruhiko Kumada ,  Hideharu Nobutoki ,  Naoki Yasuda ,  Kinya Goto ,  Masazumi Matsuura

发明人： Teruhiko Kumada ,  Hideharu Nobutoki ,  Naoki Yasuda ,  Kinya Goto ,  Masazumi Matsuura

IPC分类号： H01L21/4763

CPC分类号： H01L21/02271 ,  H01L21/314 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835

摘要： There is provided a semiconductor device and method of fabricating the same that employs an insulation film of a borazine-based compound to provided enhanced contact between a material for insulation and that for interconnection, increased mechanical strength, and other improved characteristics. The semiconductor device includes a first insulation layer having a recess with a first conductor layer buried therein, an etching stopper layer formed on the first insulation layer, a second insulation layer formed on the etching stopper layer, a third insulation layer formed on the second insulation layer, and a second conductor layer buried in a recess of the second and third insulation layers. The second and third insulation layers are grown by chemical vapor deposition with a carbon-containing borazine compound used as a source material and the third insulation layer is smaller in carbon content than the second insulation layer.

摘要翻译： 提供一种半导体器件及其制造方法，其采用环硼氮烷化合物的绝缘膜，以提供绝缘材料和互连材料，增加的机械强度和其它改进的特性之间的增强的接触。 半导体器件包括具有埋设有第一导体层的凹部的第一绝缘层，形成在第一绝缘层上的蚀刻阻挡层，形成在蚀刻停止层上的第二绝缘层，形成在第二绝缘层上的第三绝缘层 层，以及埋在第二绝缘层和第三绝缘层的凹部中的第二导体层。 第二绝缘层和第三绝缘层通过化学气相沉积生长，其中含有碳源的环硼氮烷化合物用作源材料，第三绝缘层的碳含量比第二绝缘层小。

公开(公告)号：US07943981B2

公开(公告)日：2011-05-17

申请号：US12233073

申请日：2008-09-18

申请人： Tsunehiro Ino ,  Naoki Yasuda ,  Koichi Muraoka ,  Jun Fujiki ,  Shoko Kikuchi ,  Keiko Ariyoshi

发明人： Tsunehiro Ino ,  Naoki Yasuda ,  Koichi Muraoka ,  Jun Fujiki ,  Shoko Kikuchi ,  Keiko Ariyoshi

IPC分类号： H01L29/788

CPC分类号： H01L29/792 ,  H01L29/42348 ,  H01L29/513 ,  H01L29/518

摘要： A semiconductor memory element includes: a tunnel insulating film formed on a semiconductor substrate; a HfON charge storage film with Bevan clusters formed on the tunnel insulating film; a blocking film formed on the HfON charge storage film; and a gate electrode formed on the blocking film.

摘要翻译： 半导体存储元件包括：形成在半导体衬底上的隧道绝缘膜; 在隧道绝缘膜上形成具有Bevan簇的HfON电荷存储膜; 形成在HfON电荷存储膜上的阻挡膜; 以及形成在阻挡膜上的栅电极。

公开(公告)号：US20100181654A1

公开(公告)日：2010-07-22

申请号：US12664605

申请日：2009-06-13

申请人： Toshihito Fujiwara ,  Toshihiko Nishimori ,  Toshiya Watanabe ,  Naoki Yasuda ,  Hideharu Nobutoki ,  Teruhiko Kumada ,  Chiho Mizushima ,  Takuya Kamiyama ,  Tetsuya Yamamoto

发明人： Toshihito Fujiwara ,  Toshihiko Nishimori ,  Toshiya Watanabe ,  Naoki Yasuda ,  Hideharu Nobutoki ,  Teruhiko Kumada ,  Chiho Mizushima ,  Takuya Kamiyama ,  Tetsuya Yamamoto

IPC分类号： H01L23/58 ,  H01L21/471

CPC分类号： H01L21/02118 ,  C23C16/342 ,  C23C16/505 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/312 ,  H01L21/76801

摘要： An object to provide an insulating film for a semiconductor device, which has characteristics of low permittivity, a low leak current, and high mechanical strength, undergoes small time-dependent change of these characteristics, and has excellent water resistance, and to provide a manufacturing apparatus of the same, and a manufacturing method of the semiconductor device using the insulating film. The production process comprises a film forming step of supplying a mixed gas containing a carrier gas and a raw material gas, which is a gasified material having borazine skeletal molecules, into a chamber, causing the mixed gas to be in a plasma state, applying a bias to the substrate placed in the chamber, and carrying out gas-phase polymerization by using the borazine skeletal molecule as a fundamental unit so as to form the insulating film on the substrate; and a reaction promoting step of, after the film forming step, bringing the bias applied to the substrate to a different magnitude from the bias in the film forming step, supplying the mixed gas while gradually reducing only the raw material gas, which is the gasified material having the borazine skeletal molecules, treating the insulating film with a plasma mainly comprising the carrier gas.

摘要翻译： 提供具有低介电常数，低泄漏电流和高机械强度特性的半导体器件绝缘膜的目的是经历这些特性的小的时间依赖性变化，并且具有优异的耐水性，并且提供制造 以及使用该绝缘膜的半导体器件的制造方法。 制造方法包括：将含有载气的混合气体和作为具有环硼氮烷骨架分子的气化材料的原料气体供给到室中的成膜工序，使混合气体处于等离子体状态， 偏置于放置在室内的基板上，通过使用环硼氮烷骨架分子作为基本单元进行气相聚合，以在基板上形成绝缘膜; 以及反应促进步骤，在成膜步骤之后，使得施加到基板上的偏压与成膜步骤中的偏压大小不同，供给混合气体，同时逐渐减少气化的原料气体 具有环硼烷骨架分子的材料，以主要包含载气的等离子体处理绝缘膜。