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    Nonvolatile resistance change device
    3.
    发明授权
    Nonvolatile resistance change device 有权
    非易失性电阻变化装置

    公开(公告)号：US08450709B2

    公开(公告)日：2013-05-28

    申请号：US13052165

    申请日：2011-03-21

    申请人： Haruka Kusai ,  Shosuke Fujii ,  Yasushi Nakasaki

    发明人： Haruka Kusai ,  Shosuke Fujii ,  Yasushi Nakasaki

    IPC分类号： H01L29/02

    CPC分类号： H01L45/085 ,  G11C11/5685 ,  G11C13/0007 ,  G11C2213/15 ,  G11C2213/33 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/148

    摘要： According to one embodiment a first variable resistance layer which is arranged between a second electrode and a first electrode and in which a first conductive filament is capable of growing based on metal supplied from the second electrode, and an n-th variable resistance layer which is arranged between an n-th electrode and an (n+1)-th electrode and in which an n-th conductive filament whose growth rate is different from the first conductive filament is capable of growing based on metal supplied from the (n+1)-th electrode are included, a configuration in which a plurality of conductive filaments is electrically connected in series between the first electrode layer and the (n+1)-th electrode layer is included, and a resistance is changed in a stepwise manner.

    摘要翻译： 根据一个实施例，布置在第二电极和第一电极之间并且第一导电细丝能够基于从第二电极提供的金属生长的第一可变电阻层，以及第n可变电阻层，其是第 布置在第n电极和第（n + 1）电极之间，并且其中生长速度不同于第一导电细丝的第n导电细丝能够基于从第（n + 1）个 ）电极，包括在第一电极层和第（n + 1）电极层之间串联电连接多根导电丝的结构，并且电阻以逐步的方式改变。

    Switching device and nonvolatile memory device
    4.
    发明授权
    Switching device and nonvolatile memory device 有权
    开关器件和非易失性存储器件

    公开(公告)号：US08278644B2

    公开(公告)日：2012-10-02

    申请号：US12710942

    申请日：2010-02-23

    申请人： Shosuke Fujii ,  Koichi Muraoka

    发明人： Shosuke Fujii ,  Koichi Muraoka

    IPC分类号： H01L29/06

    CPC分类号： H01L29/51 ,  H01L29/1606 ,  H01L29/7781 ,  H01L29/78

    摘要： A switching device includes: a first layer including a carbon material having a six-member ring network structure; a first electrode electrically connected to a first portion of the first layer; a second electrode electrically connected to a second portion of the first layer and provided apart from the first electrode; a third electrode including a fourth portion provided opposing a third portion between the first portion and the second portion of the first layer; and a second layer provided between the third portion of the first layer and the fourth portion of the third electrode. The second layer includes: a base portion; and a functional group portion. The functional group portion is provided between the base portion and the first layer. The functional group portion is bonded to the base portion. A ratio of sp2-bonded carbon and sp3-bonded carbon of the first layer is changeable by a voltage applied between the first layer and the third electrode.

    摘要翻译： 开关装置包括：第一层，包括具有六元环网结构的碳材料; 电连接到第一层的第一部分的第一电极; 电连接到第一层的第二部分并且与第一电极分开设置的第二电极; 第三电极，包括与所述第一层的第一部分和第二部分之间的第三部分相对设置的第四部分; 以及设置在第一层的第三部分和第三电极的第四部分之间的第二层。 第二层包括：基部; 和官能团部分。 功能组部分设置在基部和第一层之间。 官能团部分结合到基部。 第一层的sp2键合碳和sp3键合碳的比例可以通过施加在第一层和第三电极之间的电压而改变。

    Nonvolatile resistance change element
    6.
    发明授权
    Nonvolatile resistance change element 有权
    非易失性电阻变化元件

    公开(公告)号：US09406882B2

    公开(公告)日：2016-08-02

    申请号：US13603718

    申请日：2012-09-05

    申请人： Shosuke Fujii ,  Hidenori Miyagawa ,  Reika Ichihara

    发明人： Shosuke Fujii ,  Hidenori Miyagawa ,  Reika Ichihara

    IPC分类号： H01L45/00 ,  H01L27/24

    CPC分类号： H01L45/145 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/148

    摘要： According to one embodiment, a nonvolatile resistance change element includes a first electrode, a second electrode, a first layer and a second layer. The second electrode contains at least one metal element selected from Ag, Cu, Ni, Co, Al, and Ti. The first layer is arranged between the first electrode and the second electrode. The second layer is arranged between the first electrode and the first layer. A diffusion coefficient of the metal element in the second layer is larger than a diffusion coefficient of the metal element in the first layer.

    摘要翻译： 根据一个实施例，非易失性电阻变化元件包括第一电极，第二电极，第一层和第二层。 第二电极含有选自Ag，Cu，Ni，Co，Al和Ti中的至少一种金属元素。 第一层布置在第一电极和第二电极之间。 第二层布置在第一电极和第一层之间。 金属元素在第二层中的扩散系数大于第一层中的金属元素的扩散系数。

    MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
    9.
    发明申请
    MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    存储器件及其制造方法

    公开(公告)号：US20140061570A1

    公开(公告)日：2014-03-06

    申请号：US13716347

    申请日：2012-12-17

    申请人： Shosuke FUJII ,  Takashi Haimoto

    发明人： Shosuke FUJII ,  Takashi Haimoto

    IPC分类号： H01L45/00

    CPC分类号： H01L45/1266 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/148 ,  H01L45/16

    摘要： According to one embodiment, a memory device includes a first electrode, a first resistance change layer, a first insulating section, a second electrode and an intermediate layer. The first resistance change layer is provided on the first electrode. The first insulating section is provided on the first resistance change layer. The second electrode is provided on the first resistance change layer. The second electrode is in contact with the first resistance change layer. The intermediate layer is provided between the second electrode and the first insulating section. The intermediate layer is in contact with the second electrode and the first insulating section.

    摘要翻译： 根据一个实施例，存储器件包括第一电极，第一电阻改变层，第一绝缘部分，第二电极和中间层。 第一电阻变化层设置在第一电极上。 第一绝缘部设置在第一电阻变化层上。 第二电极设置在第一电阻变化层上。 第二电极与第一电阻变化层接触。 中间层设置在第二电极和第一绝缘部之间。 中间层与第二电极和第一绝缘部分接触。