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    SEMICONDUCTOR SWITCH DEVICE AND METHOD
    1.
    发明申请
    SEMICONDUCTOR SWITCH DEVICE AND METHOD 审中-公开

    公开(公告)号：US20190019867A1

    公开(公告)日：2019-01-17

    申请号：US16002841

    申请日：2018-06-07

    Applicant: NXP B.V.

    Inventor： Mahmoud Shehab Mohammad Al-Sa'di ,  Petrus Hubertus Cornelis Magnee ,  Ihor Brunets ,  Jan Willem Slotboom ,  Tony Vanhoucke

    IPC: H01L29/10 ,  H01L21/8234 ,  H01L21/762 ,  H01L29/78 ,  H01L29/06 ,  H01L29/08

    Abstract: A semiconductor switch device and a method of making the same. The device includes a semiconductor substrate having a major surface. The device also includes a first semiconductor region located in the substrate beneath the major surface. The device includes an elongate gate located on the major surface. The device also includes a source region and a drain region located in the first semiconductor region adjacent respective first and second elongate edges of the gate. The device also includes electrical contacts for the source and drain regions. The contacts include at least two contacts located on either the source region or the drain region, which are spaced apart along a direction substantially parallel the elongate edges of the gate. The device further includes an isolation region located between the at least two contacts. The isolation region extends through the source/drain region from the major surface to the first semiconductor region.

    TRANSISTOR AMPLIFIER CIRCUIT AND INTEGRATED CIRCUIT
    3.
    发明申请
    TRANSISTOR AMPLIFIER CIRCUIT AND INTEGRATED CIRCUIT 审中-公开
    晶体管放大器电路和集成电路

    公开(公告)号：US20150145005A1

    公开(公告)日：2015-05-28

    申请号：US14542990

    申请日：2014-11-17

    Applicant: NXP B.V.

    Inventor： Viet Thanh Dinh ,  Tony Vanhoucke ,  Evelyne Gridelet ,  Anco Heringa ,  Jan Willem Slotboom ,  Dirk Klaassen

    IPC: H01L29/737 ,  H01L29/08 ,  H01L29/78 ,  H01L29/161 ,  H01L29/06

    CPC classification number: H01L29/7371 ,  H01L29/0607 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/735 ,  H01L29/7378 ,  H01L29/7809 ,  H01L29/7835

    Abstract: Disclosed is a transistor having a first region of a first conductivity type for injecting charge carriers into the transistor and a laterally extended second region) of the first conductivity type having a portion including a contact terminal for draining said charge carriers from the transistor, wherein the first region is separated from the second region by an intermediate region of a second conductivity type defining a first p-n junction with the first region and a second p-n junction with the second region, wherein the laterally extended region separates the portion from the second p-n junction, and wherein the transistor further comprises a substrate having a doped region of the second conductivity type, said doped region being in contact with and extending along the laterally extended second region and a further contact terminal connected to the doped region for draining minority charge carriers from the laterally extended second region. An amplifier circuit and IC including such transistors are also disclosed.

    Abstract translation: 公开了具有第一导电类型的第一区域用于将电荷载体注入晶体管的第一区域和第二导电类型的横向延伸的第二区域的晶体管，其具有包括用于从晶体管排出所述电荷载流子的接触端子的部分，其中， 第一区域与第二区域通过限定与第一区域的第一pn结的第二导电类型的中间区域和与第二区域的第二pn结分离，其中横向延伸区域将第二pn结部分与第二pn结分离， 并且其中所述晶体管还包括具有所述第二导电类型的掺杂区域的衬底，所述掺杂区域沿着所述横向延伸的第二区域接触并延伸，以及另外的接触端子，其连接到所述掺杂区域，以从所述掺杂区域中排出少数电荷载流子 横向延伸的第二区域。 还公开了包括这种晶体管的放大器电路和IC。

    Transistor amplifier circuit and integrated circuit
    5.
    发明授权
    Transistor amplifier circuit and integrated circuit 有权

    公开(公告)号：US10043894B2

    公开(公告)日：2018-08-07

    申请号：US14542990

    申请日：2014-11-17

    Applicant: NXP B.V.

    Inventor： Viet Thanh Dinh ,  Tony Vanhoucke ,  Evelyne Gridelet ,  Anco Heringa ,  Jan Willem Slotboom ,  Dirk Klaassen

    IPC: H01L29/737 ,  H01L29/06 ,  H01L29/735 ,  H01L29/78 ,  H01L29/165

    Abstract: Disclosed is a transistor having a first region of a first conductivity type for injecting charge carriers into the transistor and a laterally extended second region of the first conductivity type having a portion including a contact terminal for draining said charge carriers from the transistor, wherein the first region is separated from the second region by an intermediate region of a second conductivity type defining a first p-n junction with the first region and a second p-n junction with the second region, wherein the laterally extended region separates the portion from the second p-n junction, and wherein the transistor further comprises a substrate having a doped region of the second conductivity type, said doped region being in contact with and extending along the laterally extended second region and a further contact terminal connected to the doped region for draining minority charge carriers from the laterally extended second region. An amplifier circuit and IC including such transistors are also disclosed.

    Semiconductor devices with a mixed crystal region
    7.
    发明授权
    Semiconductor devices with a mixed crystal region 有权

    公开(公告)号：US11018230B1

    公开(公告)日：2021-05-25

    申请号：US16723311

    申请日：2019-12-20

    Applicant: NXP B.V.

    Inventor： Tony Vanhoucke ,  Mahmoud Shehab Mohammad Al-Sa'di ,  Johannes Josephus Theodorus Marinus Donkers ,  Jan Willem Slotboom

    IPC: H01L29/165 ,  H01L29/737 ,  H01L29/868

    Abstract: An embodiment of a semiconductor device may include a semiconductor substrate, a first semiconductor region comprising a first material with a first polarity formed within the semiconductor substrate and a second semiconductor region comprising the first material with a second polarity formed within the semiconductor substrate and coupled to the first semiconductor region. In an embodiment, a semiconductor device may also include a first electrode coupled to the first semiconductor region, a second electrode coupled to the second semiconductor region, and a depletion region formed between the first semiconductor region and the second semiconductor region. The depletion region may include a mixed crystal region that includes a mixed crystal alloy of the first material and a second material, wherein the mixed crystal region has a lower bandgap energy than a bandgap energy of the first material.

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